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Open-Access Silicon Photonics: Current Status and Emerging Initiatives
摘要： Silicon photonics is widely acknowledged as a game-changing technology driven by the needs of datacom and telecom. Silicon photonics builds on highly capital-intensive manufacturing infrastructure, and mature open-access silicon photonics platforms are translating the technology from research fabs to industrial manufacturing levels. To meet the current market demands for silicon photonics manufacturing, a variety of open-access platforms is offered by CMOS pilot lines, R&D institutes, and commercial foundries. This paper presents an overview of existing and upcoming commercial and noncommercial open-access silicon photonics technology platforms. We also discuss the diversity in these open-access platforms and their key differentiators.
关键词： CMOS,photonic manufacturing,silicon photonics,open-access,foundry,multiproject wafer (MPW),photonic integrated circuits (PICs)
更新于2025-09-23 15:21:01
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Special Issue of Silicon Photonics [Scanning the Issue]
摘要： Silicon, well established as an electronics platform, was ?rst seriously explored as an optical waveguide platform in 1987 by Soref and Bennett. Light at ?ber-optic communication wavelengths can pass through crystalline silicon with very high transmission. Silicon waveguides can be made by etching into the thin crystalline silicon layer on a silicon-on-insulator wafer. Because of the high refractive index of silicon compared to the surrounding oxide, these waveguides can bend with radii less than ?ve micrometers and make compact splitters/combiners, ?lters, and polarization elements. High-speed optical modulators can be made by rapidly changing free electron and hole densities in the silicon in the optical path, and photodetectors can be made by epitaxially growing germanium on the silicon, both using electrically connected p-n junctions. The only element missing to complete an optical integration platform is an integrated light source, rendered very dif?cult because of the indirect bandgap of silicon and germanium. While to date, no practical electrically pumped light emitter has been deployed based on silicon itself, multiple hybrid and heterogeneous solutions have been reported.
关键词： integrated light source,hybrid and heterogeneous solutions,fiber-optic communication,Silicon photonics,optical waveguide
更新于2025-09-23 15:21:01
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[IEEE 2018 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2018.6.18-2018.6.22)] 2018 IEEE Symposium on VLSI Technology - Hybrid 14nm FinFET - Silicon Photonics Technology for Low-Power Tb/s/mm <sup>2</sup> Optical I/O
摘要： We demonstrate a microbump flip-chip integrated 14nm-FinFET CMOS-Silicon Photonics (SiPh) technology platform enabling ultra-low power Optical I/O transceivers with 1.6Tb/s/mm2 bandwidth density. The transmitter combines a differential FinFET driver with a Si ring modulator, enabling 40Gb/s NRZ optical modulation at 154fJ/bit dynamic power consumption in a 0.015mm2 footprint. The receiver combines a FinFET trans-impedance amplifier (TIA) with a Ge photodiode, enabling 40Gb/s NRZ photodetection with -10.3dBm sensitivity at 75fJ/bit power consumption, in a 0.01mm2 footprint. High-quality data transmission and reception is demonstrated in a loop-back experiment at 1330nm wavelength over standard single mode fiber (SMF) link margin. Finally, a 4x40Gb/s, 0.1mm2 with 2dB wavelength-division multiplexing (WDM) transmitter with integrated thermal control is demonstrated, enabling Optical I/O scaling substantially beyond 100Gb/s per fiber.
关键词： optical interconnect,FinFET,silicon photonics
更新于2025-09-23 15:21:01
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Exploring Topological Photonics in Synthetic Dimensions
摘要： In recent years, topological photonics has emerged as an exciting research ?eld in which topological concepts, originally introduced to understand the behaviour of electrons in solid-state materials, are instead exploited to design and control the behaviour of light [1]. In this direction, the development of so-called “synthetic dimensions” offers a particularly powerful approach to exploring topological photonics. The central idea of this method is to identify and couple together a set of internal degrees of freedom so as to simulate the motion of a quantum particle along an extra spatial direction [2]. In this framework, a system with D-real dimensions can be made to behave like a D + d-dimensional system, when d synthetic dimensions are added to the system. This approach, therefore, both raises the prospect of simulating exotic systems with four or more spatial dimensions, but also provides, through the external control of couplings, a straightforward way to design topological lattices in different dimensions [3]. The combination of synthetic dimensions and topological physics has lead to a very rapid expansion of re- search, starting from ultracold atomic gases [2-4] and then spreading also to photonics systems [1]. Very recently, the ?rst topological photonics model with a synthetic dimension has been realised experimentally using the spatial modes of a waveguide array by the Segev group [5], where they were able to observe the edge states associated with an effective 2D quantum Hall system.
关键词： quantum Hall effect,synthetic dimensions,photonics systems,topological photonics
更新于2025-09-23 15:19:57
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Modeling Electrical Switching of Nonvolatile Phase-Change Integrated Nanophotonic Structures with Graphene Heaters
摘要： Progress in integrated nanophotonics has enabled large-scale programmable photonic integrated circuits (PICs) for general-purpose electronic-photonic systems on a chip. Relying on the weak, volatile thermo-optic or electro-optic effects, such systems usually exhibit limited reconfigurability along with high energy consumption and large footprints. These challenges can be addressed by resorting to chalcogenide phase-change materials (PCMs) such as Ge2Sb2Te5 (GST) that provide substantial optical contrast in a self-holding fashion upon phase transitions. However, current PCM-based integrated photonic applications are limited to single devices or simple PICs due to the poor scalability of the optical or electrical self-heating actuation approaches. Thermal-conduction heating via external electrical heaters, instead, allows large-scale integration and large-area switching, but fast and energy-efficient electrical control is yet to show. Here, we model electrical switching of GST-clad integrated nanophotonic structures with graphene heaters based on the programmable GST-on-silicon platform. Thanks to the ultra-low heat capacity and high in-plane thermal conductivity of graphene, the proposed structures exhibit a high switching speed of ~80 MHz and high energy efficiency of 19.2 aJ/nm3 (6.6 aJ/nm3) for crystallization (amorphization) while achieving complete phase transitions to ensure strong attenuation (~6.46 dB/μm) and optical phase (~0.28 π/μm at 1550 nm) modulation. Compared with indium tin oxide and silicon p-i-n heaters, the structures with graphene heaters display two orders of magnitude higher figure of merits for heating and overall performance. Our work facilitates the analysis and understanding of the thermal-conduction heating-enabled phase transitions on PICs and supports the development of the future large-scale PCM-based electronic-photonic systems.
关键词： graphene,nonvolatile,reconfigurable photonics,phase-change materials,silicon photonics,integrated nanophotonic structures
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Non-Volatile Indium Tin Oxide Electro-Optic Switch
摘要： The abstract of the paper is not provided in the given text.
关键词： non-volatile,silicon photonics,indium tin oxide,electro-optic switch
更新于2025-09-23 15:19:57
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Extension of an FFT-Based Beam Propagation Method to Plasmonic and Dielectric Waveguide Discontinuities and Junctions
摘要： We adapted a fast Fourier transform-based Beam Propagation Method (FFT-BPM) to investigate waveguide discontinuities in plasmonic waveguides. The adaptation of the FFT-BPM to treat transverse magnetic (TM) fields requires the circumvention of two major difficulties: the mixed derivatives of the magnetic field and waveguide refractive index profile in the TM wave equation and the step-like index change at the transverse metal-dielectric boundary of the plasmonic guide and the transverse boundaries of the dielectric waveguide as well. An equivalent-index method is adopted to transform TM fields to transverse electric (TE) ones, thus enabling the benefit of the full power and simplicity of the FFT-BPM. Moreover, an appropriate smoothing function is used to approximate the step-like refractive index profile in the transverse direction. At the junction plane, we used an accurate combined spatial-spectral reflection operator to calculate the reflected field. To validate our proposed scheme, we investigated the modal propagation in a silicon waveguide terminated by air (like a laser facet in two cases: with and without a coating layer). Then we considered a subwavelength plasmonic waveguide (metal-insulator-metal MIM) butt-coupled with a dielectric waveguide, where the power transmission efficiency has been calculated and compared with other numerical methods. The comparison reveals good agreement.
关键词： butt-coupler,plasmonics,FFT-BPM,sensors,plasmonic waveguide,bi-directional BPM,photonics,reflection formalism,TM fields,optical propagation
更新于2025-09-23 15:19:57
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Cuprous Sulfide for Different Laser Pulse Generation: Q-Switching and Mode-Locking
摘要： As a new type of copper-based chalcogenide two-dimensional nanomaterial, cuprous sulfide (Cu2S) has attracted much attention due to its unique band structure and optical properties. In this paper, all-fiber ring laser at the 1.53 μm regime with two kinds of Cu2S saturable absorber devices is demonstrated. The self-started Q-switched pulse with a central wavelength of 1530 nm was obtained for the first time by using Cu2S deposited on the fiber jumper as SA. When the tapered fibers deposited with Cu2S are used to replace the jumpers in the cavity, it can be found that the loss is significantly reduced and a mode-locked pulse with a pulse width of 896 fs has been achieved via evanescent field interaction. This experiment further enriches the application of Cu2S nanosheets in pulsed lasers and promotes the development and application of metal sulfides in nonlinear optics and ultrafast photonics.
关键词： saturable absorber,cuprous sulfide,mode-locking,Q-switching,ultrafast photonics,Cu2S,nonlinear optics
更新于2025-09-23 15:19:57
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Hybridizing graphene and photonic crystal fibre
摘要： While the ability to increase the light–matter interaction by depositing graphene inside the air holes of a long length of photonic crystal fibre is worth celebrating, cautious optimism is called for when we begin to discuss the industrialization of graphene-based fibre-optic components.
关键词： photonics,graphene,photonic crystal fibre,light–matter interaction
更新于2025-09-23 15:19:57
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Optical properties of metamorphic type-I InAs <sub/> 1? <i>x</i> </sub> Sb <sub/><i>x</i> </sub> /Al <sub/><i>y</i> ? </sub> In <sub/> 1? <i>y</i> ? </sub> As quantum wells grown on GaAs for the mid-infrared spectral range
摘要： We analyse the optical properties of InAs1?xSbx/Aly In1?y As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Aly In1?y As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Aly In1?y As MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths >3 μm. Photoluminescence (PL) measurements for QWs having Sb compositions up to x = 10% demonstrate strong room temperature PL up to 3.4 μm, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission (SE), using a theoretical model based on an eight-band k·p Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure, which reduces the band edge density of states making more carriers available to undergo radiative recombination at fixed carrier density. Our results highlight the potential of type-I InAs1?xSbx/Aly In1?y As metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of light-emitting diodes and diode lasers.
关键词： light-emitting diode,k·p modelling,metamorphic heterostructure,mid-infrared,semiconductors,molecular beam epitaxy,photonics
更新于2025-09-23 15:19:57