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Direct Electrochemical Preparation of Nanostructured Silicon Carbide and Its Nitridation Behavior
摘要： Silicon carbide was synthesized from mixtures of SiO2 and graphite by applying the concept of the FFC-Cambridge process and several fundamental aspects of the synthesis route were investigated. Porous disks composed of powders of SiO2 and graphite in molar ratios of 1:0.5, 1:1 and 1:1.5 were prepared by sintering in inert atmosphere and subjected to electro-deoxidation in molten CaCl2 at 1173 K under a range of experimental conditions. Disks of molar ratio 1:1.5, reduced at an applied voltage of 2.8 V for a duration of 6 h, yielded exclusively phase-pure SiC of nanowire morphology as the reaction product, while the other precursor compositions provided significant amounts of calcium silicides. Voltages lower than 2.8 V gave mixtures of SiC with elemental Si and graphite, and voltages higher than that gave CaSi alone. Shorter electro-deoxidation times led to incomplete reduction and allowed for the identification of CaSiO3 as a transient phase. Based on the experimental results a multipath reaction mechanism is proposed, consisting of the electrochemical reduction of SiO2 and CaSiO3 to Si and the subsequent in-situ carbonization of the Si formed to SiC. The effect of N2 at high temperature on the electrochemically synthesized SiC was investigated and the formation of nanowire Si2N2O was observed. Overall, the process presented is a facile single-step and low-temperature method for the synthesis of SiC with possible commercial prospects.
关键词： electro-deoxidation,Silicon carbide,Si2N2O,molten CaCl2,FFC-Cambridge process,nanowire morphology
更新于2025-09-23 15:21:01
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Effect of Milling on the Densification of SiC-BasedComposites from Polysilazane
摘要： High density SiC-based composites from polysilazane were fabricated by high energy milling and hot pressing. After cross-linking at 200 °C, the polysilazane was pyrolysed at 1000 °C in N2 for 2 h to form amorphous Si-C-N-O followed by high energy milling for 1 h. Milled amorphous Si-C-N-O was sintered in hot pressing at 1600 and 1700 °C for 1 h in vacuum under the applied pressure of 50 MPa. Although no sintering additives were used, dense SiC-based composites were obtained with this method. Sintered density was 3.04 g/cm3, while only 2.57 g/cm3 for amorphous Si-C-N-O without milling. It is suggested that the liquid phase generated during the formation of Si2N2O facilitated the densification of the composite.
关键词： polysilazane,Si2N2O,high energy milling,SiC-based composites
更新于2025-09-10 09:29:36