- 标题
- 摘要
- 关键词
- 实验方案
- 产品
过滤筛选
- 2018
- gate oxide integrity
- avalanche ruggedness
- SiC MOSFET
- bias temperature instability
- Electronic Science and Technology
-
Light Metals 2016 (TMS/Light) || SiC in Electrolysis Pots: An Update
摘要： This update reviews recent results of physical and chemical testing of Si3N4-bonded SiC sidelining material for aluminium electrolysis pots, as well as the corrosion mechanisms of SiC materials under electrolysis conditions. New test methods have been developed to show how these materials perform in a harsh operating environment. The attack by low temperature bath was tested on SiC bricks, also with SiAlON and N-SiC as binder phase. Reverse reactive sintering has become an important manufacturing process for Si3N4-bonded SiC sidelining material This review updates [1, 2].
关键词： SiC corrosion resistance,SiC manufacture,SiC degradation
更新于2025-09-10 09:29:36
-
An Experimental Demonstration of Short Circuit Protection of SiC Devices
摘要： An experimental demonstration of an effective short circuit protection scheme for SiC MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC device before and after the short circuit events were obtained to evince that the device remained in good health. An ultra-fast short circuit protection scheme is implemented given the observed lower short-circuit withstand of present SiC devices. It is shown that the integrity of the SiC device was protected after one-hundred short circuit events.
关键词： Short-Circuit,MOSFET,Silicon Carbide,Protection,SiC,Wide band-gap
更新于2025-09-10 09:29:36
-
Low temperature wet-O <sub/>2</sub> annealing process for enhancement of inversion channel mobility and suppression of <i>V</i> <sub/>fb</sub> instability on 4H-SiC (0001) Si-face
摘要： For improvement of 4H-SiC metal-oxide-semiconductor ?eld-effect-transistor performance, a post-oxidation annealing (POA) process in a wet environment after dry oxidation was systematically investigated. By tuning the wet-POA conditions, we clari?ed that wet-POA at low temperatures is more advantageous for both the enhancement of channel mobility and the suppression of ?atband voltage instability. One of the mechanisms of channel mobility enhancement is attributed to the decrease in the density of traps in oxide near the MOS interface, rather than conventional interface traps. The effects of the wet environment on interfacial properties were also discussed based on oxide growth kinetics on 4H-SiC.
关键词： channel mobility,Vfb instability,MOSFET,4H-SiC,wet-O2 annealing
更新于2025-09-10 09:29:36
-
Ferromagnetism induced by vacancies in (N, Al)-codoped 6H-SiC
摘要： The electronic structures and magnetic properties of 6H-SiC doped with N, C vacancies (VC), Si vacancies (VSi) and Al are studied by first principles calculations. The results indicate that the N substituting C in 6H-SiC cannot order magnetism but VSi can introduce magnetic moments effectively. Ferromagnetism coupling is obtained in (N, 2VSi)-codoped 6H-SiC. The ferromagnetism can be mainly attributed to the interactions between the 2p orbitals of C atoms around Si vacancies. More interestingly, substituting Si with Al can enhance the ferromagnetic states in 6H-SiC. We also studied the effect of charge on magnetic properties and provide an effective method of tuning magnetism in 6H-SiC.
关键词： First principles,Electronic structure,Dilute magnetic semiconductors,6H-SiC,Magnetic properties
更新于2025-09-10 09:29:36
-
Surface plasmon-enhanced near-field thermal rectification in graphene-based structures
摘要： We propose a thermal rectification structure composed of InSb and graphene-coated 3C-SiC separated by a nanoscale vacuum gap. To obtain an obvious thermal rectification effect, the permittivities of these materials are all considered to be temperature-dependent. Numerical calculations based on fluctuation electrodynamics reveal that the introduction of graphene into the structure enhances significantly near-field radiative heat flux and thermal rectification efficiency owing to the strong coupling of surface plasmon-polaritons between InSb and graphene. In general, the rectification efficiency above 60% can be maintained for the vacuum gap less than 70 nm. The rectification efficiency exceeding 95% is realized for a vacuum gap of 10 nm and a chemical potential of 0.1 eV. Increasing the emitter’s temperature leads to the drastic increase of the rectification efficiency in a wider temperature range. A lower chemical potential seems more favorable to raising rapidly the rectification efficiency. The above results might be helpful in designing a thermal diode with higher efficiency and wider vacuum gap.
关键词： near-field radiative heat transfer,thermal rectification,InSb,surface plasmon-polaritons,graphene,3C-SiC
更新于2025-09-10 09:29:36
-
Fabrication of CdS-decorated mesoporous SiC hollow nanofibers for efficient visible-light-driven photocatalytic hydrogen production
摘要： In the present work, we reported the fabrication of CdS decorated mesoporous SiC hollow nanofibers for efficient visible-light-driven photocatalytic hydrogen production. The mesoporous SiC hollow nanofibers were firstly fabricated by electrospinning, followed by hydrothermal treatment to introduce the CdS nanoparticles decorated on the preformed fiber matrix, The resultant CdS/SiC hybrid photocatalysts were systematically characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM) and N2 adsorption. The as-fabricated CdS/SiC hybrids exhibited a robust stability with a release rate up to ~ 124.65?μmol?h?1?g?1 for photocatalytic H2 evolution driven by visible light, which was profoundly enhanced for more than 16 times to that of pristine SiC counterparts, and comparable to the state-of-the-art one of SiC-based photocatalysts.
关键词： CdS,SiC,photocatalytic hydrogen production,visible-light-driven,hollow nanofibers
更新于2025-09-10 09:29:36
-
Effects of sintering conditions on the microstructure and mechanical properties of SiC prepared using powders recovered from kerf loss sludge
摘要： The effects of sintering conditions on the microstructure and mechanical properties of the sintered SiC prepared using the SiC powder recovered from the kerf loss sludge were investigated. The recovered SiC powders were consolidated by spark plasma sintering (SPS) and conventional sintering methods. The effects of sintering temperature, time and methods (SPS and conventional sintering) on the phase, grain size and density of SiC were systematically studied. The Vickers hardness of spark plasma-sintered (SPSed) samples was higher than that of conventional sintered samples due to small grain size. When holding time was increased from 10 to 30 min, the grain size and relative density of SPSed samples were also increased, which lead to the almost constant Vickers hardness by competing effects of grain size and relative density. When holding time was over 30 min, no appreciable change of the relative density and grain size were observed, which can lead to similar values of Vickers hardness. SPS process can be used to make SiC with high density and hardness at relatively low temperature compared with the conventional sintering process.
关键词： Recovered SiC,spark plasma sintering (SPS),sintering conditions,conventional sintering
更新于2025-09-10 09:29:36
-
Effect of Milling on the Densification of SiC-BasedComposites from Polysilazane
摘要： High density SiC-based composites from polysilazane were fabricated by high energy milling and hot pressing. After cross-linking at 200 °C, the polysilazane was pyrolysed at 1000 °C in N2 for 2 h to form amorphous Si-C-N-O followed by high energy milling for 1 h. Milled amorphous Si-C-N-O was sintered in hot pressing at 1600 and 1700 °C for 1 h in vacuum under the applied pressure of 50 MPa. Although no sintering additives were used, dense SiC-based composites were obtained with this method. Sintered density was 3.04 g/cm3, while only 2.57 g/cm3 for amorphous Si-C-N-O without milling. It is suggested that the liquid phase generated during the formation of Si2N2O facilitated the densification of the composite.
关键词： polysilazane,Si2N2O,high energy milling,SiC-based composites
更新于2025-09-10 09:29:36
-
Optical characterization of SiC films grown on Si(111)
摘要： Thin SiC films, grown on Si by substitution of C into Si on Si substrates with and without a SiGe buffer layer, have been investigated with optical techniques. The formation of SiC domains leads to strong green and blue photoluminescence from stacking faults and surface oxides. Introduction of a 10-nm-thick SiGe buffer layer leads to improved crystallinity as evidenced by X-ray diffraction and optical second-harmonic generation (SHG). Nonlinear optical azimuthal rotational spectra demonstrate the presence of cubic SiC in the film. Furthermore, angle-of-incidence scans are consistent with simulations based on a film with cubic symmetry which demonstrates that the cubic phase dominates the SiC film. Growth on vicinal Si(111) leads to a SiC film with the same c1v symmetry as the substrate, demonstrating that the lattice planes of the SiC film follow those of the Si substrate. Spatially resolved SHG scans show structures that are related to the underlying structure of the Si interface resulting from the growth process.
关键词： second-harmonic generation,optical characterization,SiC films,photoluminescence,crystallinity
更新于2025-09-10 09:29:36
-
Alveolar TiO2-β-SiC photocatalytic composite foams with tunable properties for water treatment
摘要： New alveolar TiO2-β-SiC photocatalytic composite foams gathering within a ready-to-use media, the TiO2 active phase and the β-SiC alveolar foam structure have been prepared through a Shape Memory Synthesis (SMS) replica method. They have been obtained by incorporating TiO2 powders inside the infiltration slurry used for transforming the pre-shaped polyurethane foam into its corresponding carbide. The photocatalytic composite foams contained 16 wt. % and 24 wt. % of TiO2, most of them being available for the reaction by being located in the external layer of the foam rather than dispersed within the foam matrix, so that no further post-synthesis immobilization process was needed for coating the foam with TiO2 active phase. The adsorption behaviour of the TiO2-β-SiC composite foams towards the Diuron pollutant in water was tuned by applying a final calcination treatment to the as-synthesized foams within the 400-700 °C range, that allowed to tune the amount of residual unreacted carbon within the foams, while allowing the formation of small TiO2 crystallites via the selective oxidation of TiC carbide, and thanks to the β-SiC resistance to oxidation. The TiO2-β-SiC composite foams calcined at 700 °C outperformed a reference β-SiC supported foam TiO2 catalyst in terms of diuron degradation, while the reference foam remained more efficient in terms of mineralization rate.
关键词： water treatment,photocatalysis,Shape Memory Synthesis replica method,adsorption properties,TiO2-β-SiC composite foam
更新于2025-09-10 09:29:36