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- 2018
- gate oxide integrity
- avalanche ruggedness
- SiC MOSFET
- bias temperature instability
- Electronic Science and Technology
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Recrystallization Phase in He-Implanted 6H-SiC
摘要： The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of recrystallized layers in 15 keV He+ ion implanted 6H-SiC (0001) wafers are characterized by means of cross-sectional transmission electron microscopy (XTEM) and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900°C. The recrystallization region contains a 3C-SiC structure and a 6H-SiC structure with different crystalline orientations. A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles. With increasing annealing to 1000°C, 3C-SiC and columnar epitaxial growth 6H-SiC become unstable, instead of [0001] orientated 6H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing. The possible mechanisms for explanation are also discussed.
关键词： Recrystallization,lattice defects,He-implanted 6H-SiC,annealing,TEM
更新于2025-09-09 09:28:46
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Analysis of Forward Surge Performance of SiC Schottky Diodes
摘要： Silicon Carbide JBS diodes are capable, in forward bias, of carrying surge current of magnitude significantly higher than their rated current, for short periods. In this work, we examine the mechanisms of device failure due to excess surge current by analyzing variation of failure current with device current and voltage ratings, as well as duration of current surge. Physical failure analysis is carried out to correlate to electrical failure signature. We also quantify the impact, on surge current capability, of the resistance of the anode ohmic contact to the p-shielding region.
关键词： MPS,JBS,SiC,Diode,Surge,SBD,Silicon Carbide,Schottky,Reliability
更新于2025-09-09 09:28:46
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High-Temperature Cycle Durability of Superplastic Al-Zn Eutectoid Solder Joints with Stress Relaxation Characteristics for SiC Power Semiconductor Devices
摘要： We have developed a new high-temperature Al-Zn lead-free soldering process that utilizes superplasticity to realize SiC power devices with high-temperature cycle durability. The joining process consists of an Al-78wt.%Zn preparation being sandwiched by a SiC die and insulation substrate, an interfacial cleaning process at approximately 250-270oC, a heating stage to reach the solid-liquid coexisting temperature of 420-430oC, the ejection of low-melting-temperature β(Zn) from the joining area by press stress, and the transformation to a superplastic composition, i.e., Al-70 wt.% Zn at 270-310oC. Many lamellar phases that enable superplasticity can be formed in this microstructure. This solder joint composition was proven to have a better stress-relaxation effect than eutectic Al-95wt.%Zn, and the composition shows a much higher damping capability at the maximum operating temperature of SiC devices (200oC) than that of other joining candidates. The outstanding temperature cycle durability was verified in temperature cycle tests from -40oC to 300oC for 5000 cycles. This durability is due to the high-stress-relaxation effect from the superplasticity transformation realized by the lamellar structures in the Al-Zn alloy solder.
关键词： lamellar structure,damping capability,power semiconductor,SiC,superplasticity,temperature cycle test,Al-Zn eutectoid solder,lead-free solder,stress relaxation
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - 4H-SiC Junction Barrier Schottky Diodes and Power MOSFETs with High Repetitive UIS Ruggedness
摘要： A test procedure for repetitive unclamped inductive switching (R-UIS) is presented and the results are reported for state-of-the-art 4H-SiC Schottky barrier diodes (SBDs) and MOSFETs. The energies at failure are 8.3, 8.9, and 10.3 J/cm2 for SBD parts rated to 700, 1200, and 1700 V, respectively. The cumulative thermal effects are intentionally weak for this evaluation, and under these conditions the energies to failure are less than 10% lower for repetitive than single-pulse UIS. 1200 V / 40 mΩ MOSFET parts were stressed with 100 mJ pulses and the integrity of the gate oxide was assessed with a TDDB test. The times to failure for fresh and stressed parts are effectively the same. Tests on parts from several SiC device suppliers showed that high R-UIS ruggedness is a major differentiator of Microsemi’s SiC technology.
关键词： Schottky diode,unclamped inductive switching,4H-SiC,MOSFET,TCAD
更新于2025-09-09 09:28:46
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Monolithic silicon carbide with interconnected and hierarchical pores fabricated by reaction‐induced phase separation
摘要： Hierarchically porous silicon carbide (SiC) monoliths were fabricated based on polycarbosilane (PCS), divinyl benzene (DVB), and decalin, by a sequence of procedures including catalyst-free hydrosilylation reaction-induced phase separation, ambient-pressure drying, calcination, and HF etching. The influences of ratios of each component on the phase separation were systematically studied. It was found that isotactic polypropylene added as a nonreactive additive could effectively tailor the microstructure and improve the mechanical properties of SiC monoliths. The resultant SiC monoliths mainly consisted of β-SiC nanocrystals, and possessed low bulk density (0.7 g/cm3), high porosity (78%), large specific area (100.6 m2/g), high compressive strength (13.5 ± 1.6 MPa), and hierarchical pores (macropores around 350 nm, mesopores around 4 nm and 20 nm). These properties make SiC monoliths promising materials for catalyst/catalyst support, gas separator, and the reinforcement of high-temperature composites.
关键词： nanocrystal,reaction induced phase separation,hierarchical pore,ambient pressure drying,SiC monolith
更新于2025-09-09 09:28:46
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A 4H-SiC BJT as a Switch for On-chip Integrated UV Photodiode
摘要： This paper presents the design, fabrication and characterization of a 4H-SiC n-p-n bipolar junction transistor as a switch controlling an on-chip integrated p-i-n photodiode. The transistor and photodiode share the same epitaxial layers and topside contacts for each terminal. By connecting the collector of the transistor and the anode of the photodiode, the photo current from the photodiode is switched off at low base voltage (cut-off region of the transistor) and switched on at high base voltage (saturation region of the transistor). The transfer voltage of the circuit decreases as the ambient temperature increases (2 mV/?C). Both the on-state and off-state current of the circuit have a positive temperature coef?cient and the on/off ratio is >80 at temperature ranged from 25 ?C to 400 ?C. It is proposed that the on/off ratio can be increased by ～1000 times by adding a light blocking layer on the transistor to reduce light induced off-state current in the circuit.
关键词： photodiode,switch,BJT,4H-SiC,UV,high temperature
更新于2025-09-08 13:48:38
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Photoluminescence properties of N and B codoped fluorescent 4H-SiC and 6H-SiC single crystals
摘要： In this paper, N and B codoped 4H-SiC and 6H-SiC single crystals were prepared by physical vapour transport method and their photoluminescence properties were studied. The photoluminescence spectra, dopant concentrations, Raman spectra, and transmission spectra of these obtained crystals were characterized. It is observed that the ?uorescent crystals radiate a warm white light that covers a wide band spectrum from 450 nm to 750 nm when they are excited by a 325 nm laser. The doped 4H-SiC single crystal presents a higher photoluminescence intensity and larger spectral band compared to that of doped 6H-SiC single crystal under the similar growth and measurement conditions. Further analyze by doping concentration and transmission spectra indicate that the photoluminescence property is strongly in?uenced by the N donor and B acceptor impurity level.
关键词： 6H-SiC,photoluminescence,4H-SiC,single crystals,N and B codoped
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Impact of SiC MOSFET on PV Inverter
摘要： This paper investigates the possibility of improving power density of three-phase grid inverter by adopting SiC MOSFET. Static and dynamic characteristics of trench gate SiC MOSFET, planar gate SiC MOSFET and Si IGBT are compared. The efficiency performance of planar gate SiC MOSFET inverter, trench gate SiC MOSFET inverter and Si IGBT inverter are estimated and compared with increased switching frequency. Finally, these results are verified with 10 kW inverter prototypes.
关键词： trench gate SiC MOSFET,efficiency,planar gate SiC MOSFET,power density,three-phase grid inverter
更新于2025-09-04 15:30:14
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Extreme Ultraviolet Multilayer Nanostructures and Their Application to Solar Plasma Observations: A Review
摘要： The advent of nanoscale multilayer (ML) technology has led to great breakthroughs in many scientific and technological fields such as nano-manufacturing, bio-imaging, atto-physics, matter physics and solar physics. ML nanostructures are an enabling technology for the development of mirrors and reflective gratings having high efficiency at normal incidence in the extreme ultraviolet (EUV) range, a spectral region where conventional coatings show a negligible reflectance. In solar physics, ML mirrors have proved to be key elements for both imaging and spectroscopy space instruments, as they allow to make observations of EUV solar plasma emissions with spatial and spectral resolutions never reached before. ML-based instruments have been used in many of the major solar satellites and have flown in numerous sounding rocket experiments; moreover, in the last two decades many studies were performed in order to develop ML structures with increasingly better performance for future solar missions. In this paper, a review of the most promising ML nanostructures developed so far and applied to the observation of solar plasma emission lines is presented. After a brief recall of ML theory, a detailed discussion of the most promising material pairs and layer stack structures proposed and applied to past and current space missions will be presented; in particular, the review will focus on the ML structures having high efficiency in the 6 nm–35 nm wavelength range. Finally, the ML stability to low energy ion bombardment will be discussed.
关键词： Soft-X Rays,Multilayer,EUV,Solar Physics,Mo/Y,Al/Zr,Pd/B4C,EUV Space Instrumentation,Mg/SiC,Si/Mo,Extreme Ultravaiolet
更新于2025-09-04 15:30:14
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Strong Coupling of Folded Phonons with Plasmons in 6H-SiC Micro/Nanocrystals
摘要： Silicon carbide (SiC) has a large number of polytypes of which 3C-, 4H-, 6H-SiC are most common. Since different polytypes have different energy gaps and electrical properties, it is important to identify and characterize various SiC polytypes. Here, Raman scattering is performed on 6H-SiC micro/nanocrystal (MNC) films to investigate all four folded transverse optic (TO) and longitudinal optic (LO) modes. With increasing film thickness, the four folded TO modes exhibit the same frequency downshift, whereas the four folded LO modes show a gradually-reduced downshift. For the same film thickness, all the folded modes show larger frequency downshifts with decreasing MNC size. Based on plasmons on MNCs, these folded modes can be attributed to strong coupling of the folded phonons with plasmons which show different strengths for the different folded modes while changing the film thickness and MNC size. This work provides a useful technique to identify SiC polytypes from Raman scattering.
关键词： folded phonons,SiC micro/nanocrystals,plasmon–phonon coupling
更新于2025-09-04 15:30:14