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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • gate oxide integrity
  • avalanche ruggedness
  • SiC MOSFET
  • bias temperature instability
应用领域
  • Electronic Science and Technology
机构单位
189 条数据
?? 中文（中国） ▾

  • Layer-by-Layer Graphene Growth on <i>β</i> -SiC/Si(001)

    摘要： The mechanism of few-layer graphene growth on the technologically-relevant cubic-SiC/Si(001) substrate is uncovered using high-resolution core-level and angle-resolved photoelectron spectroscopy, low-energy electron microscopy, and micro-spot low-energy electron diffraction. The thickness of the graphitic overlayer supported on the silicon carbide substrate and related changes in the surface structure are precisely controlled by monitoring the progress of the surface graphitization in-situ during high-temperature graphene synthesis, using a combination of micro-spectroscopic techniques. The experimental data reveal gradual changes in the preferential graphene lattice orientations at the initial stages of the few-layer graphene growth on SiC(001) and can act as reference data for controllable growth of single-, double-, and triple-layer graphene on silicon carbide substrates.

    关键词： LEEM,ARPES,μ-LEED,β-SiC,XPS,nanodomains,graphene

    更新于2025-09-04 15:30:14

  • Application of Al-Doped SiC High Emissivity Powder Material Based on Infrared Radiating Coating

    摘要： Combustion synthesis technology was used to prepare an Al-doped SiC infrared radiating ceramic powder material. The material’s microstructure was analyzed by XRD, TEM and an IRE-2 infrared emitting ability survey meter. The relationship between the powder’s architectural feature and the infrared radiating performance was obtained. According to the results, the Al atom enters the intracell by replacing a silicon atom and forms a structure of finite replacement-type solid solution, which results in an expansion of the SiC lattice parameter that consequently forms multiple structural defects, distorts the lattice and improves the emissivity. Furthermore, we found that the powder’s normal emissivity in the scope of 8-12 μm can reach 0.99. Finally, the powder’s application to infrared heating coating is discussed.

    关键词： SiC lattice,Emissivity,Infrared radiating coating,Combustion synthesis

    更新于2025-09-04 15:30:14

  • STUDY OF THE POSSIBILITY OF POLYTYPE 3C SILICON CARBIDE BULK CRYSTALS GROWING FOR USE IN POWER DEVICES

    摘要： Due to its electro-physical parameters, the silicon carbide is a promising material for power devices, including the microwave range. In recent years there has been considerable progress in the development of power devices, based on SiC. Serious problem, which hinders the widespread commercialization of SiC bipolar power devices, is the p-n structures degradation during high densities of passing forward current. In 1981 the blue SiC LED’s emission spectrum over time degradation was detected. Later, after the creation of power rectifier diodes, based on SiC, it was found that their characteristics are also deteriorated with increase of operating time. It was found that the cause of degradation are the so-called “Stacking Faults” (SF) -i.e., the formation of cubic SiC layers inside the hexagonal SiC diodes during direct current flow through them. However, it is easy to assume that this degradation mechanism is absent in devices, completely based on cubic polytype 3C-SiC. This study is dedicated to the study of possibility of creating device heterostructures based on 3C-SiC. It is shown that the heterojunction between SiC polytypes may be more structurally perfect than heterojunctions between semiconductors with different chemical nature. The conclusion on perspectivity of SiC-based heterostructures application in modern electronic devices is made.

    关键词： Sublimation Epitaxy,Polytype,Hetero-Polytype Structure,Cubic Silicon Carbide,3C-SiC

    更新于2025-09-04 15:30:14

  • [IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Design of 20 kW Full-SiC, Three-level Three-Phase Uninterruptible Power Supply

    摘要： In this paper, design and implementation for high efficiency 20 kW, 480 ??????, 800 ?????? full-SiC based UPS has been presented. Loss of commercial 2-level and 3-level modules are compared based on the datasheet values. Based on the result, a 3-level NPC topology has been selected which showed higher efficiency for high switching frequency range compared to 2-level case. A double-pulse test has been conducted to extract switching-loss with a designed gate driver. A lumped parameter thermal circuit simulation has been conducted to simulate the rise of junction temperature and conduction loss. A LCL filter has been designed to meet a THD requirement while the loss and power-density are optimized. The operation and efficiency has been verified by a prototype UPS. For double-conversion efficiency, 97.6% at full load can be achieved which is equivalent to 98.8 % per single AC-DC conversion.

    关键词： high efficiency,SiC-based AC-DC converter,Uninterruptible power supply

    更新于2025-09-04 15:30:14

  • [IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs

    摘要： The short circuit (SC-SOA) capability of power devices is crucial for power systems. In this paper, 1.2 kV SiC MOSFETs and JBSFETs are characterized, and their SC-SOA behavior was tested and analyzed. Due to the lower saturated drain current, the JBSFETs were found to have superior SC-SOA compared with MOSFETs despite the integrated Schottky contact. A new short circuit failure mechanism related to melting of the top Al metallization is proposed based up on non-isothermal TCAD numerical simulations supported with SEM measurements of failed die using Energy Dispersive X-ray Spectroscopy (EDS) analysis.

    关键词： JBSFET,Robustness,MOSFET,Reliability,Silicon Carbide,4H-SiC,Failure Mechanism,Short Circuit,Ruggedness

    更新于2025-09-04 15:30:14

  • Surface-induced transition of nematic liquid crystals on graphene/SiC substrate

    摘要： A nematic liquid-crystal director aligns along the armchair direction of graphene grown on a SiC substrate. The temperature-dependent textural change in the nematic phase is di?erent from the usual texture on the alignment layer. The isotropic-nematic phase transition temperature decreases over time after cell fabrication. Tiny domains occur with the phase transition and appear to be merged from a critical temperature with decreasing temperature in the nematic phase. This is thought to be due to the transition occurring at the interface. On the other hand, the nematic liquid crystal in graphene grown on a Cu foil does not show textural changes, and the phase transition temperature does not decrease even after a long time has elapsed. X-ray ?uorescence measurements indicate that silicon atoms exist in the liquid crystal possibly extracted from the SiC substrate. A model of ?rst-order phase transition on the graphene surface has been proposed. This transition is accompanied by an inhomogeneous distribution of scalar order parameters and the transformation from a small multi-grained structure to a large domain distribution in the director ?eld. This structural transformation takes place at a temperature di?erent from that corresponding to the bulk transition. Such behavior may be explained by the adsorption process of silicon atoms in contact with the SiC-graphene interface.

    关键词： surface-induced transition,phase transition,SiC substrate,nematic liquid crystals,graphene

    更新于2025-09-04 15:30:14

  • Silicon Carbide Biotechnology || SiC RF Antennas for In Vivo Glucose Monitoring and WiFi Applications

    摘要： The American Diabetes Association estimates that nearly 10% of the US population has diabetes and that, by 2050, one in three Americans will have diabetes. Diabetes mellitus is a metabolic disease in which the body is unable to produce or properly use insulin, leading to elevated glucose levels in the blood, known as hyperglycemia. A person with frequent or extended episodes of hyperglycemia can suffer from complications in the nervous system, blood vessels, and other organs, as well as heart disease, kidney disease, strokes, vision loss, and amputation [1,2,3]. Therefore, maintaining a healthy glucose level is essential in a person’s life.

    关键词： SiC,Biocompatibility,RF Antennas,Glucose Monitoring,WiFi Applications,Diabetes

    更新于2025-09-04 15:30:14

  • First-principles study on the stability and properties of β-SiC/M+1AlC (M=Sc, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; n=1,2) interfaces

    摘要： In this work, first principles calculations are performed to investigate the structural, electronic, and mechanical properties of the interface between β-SiC ceramics and Mn+1AlCn (M = Sc, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; n = 1,2) phases, with particular focus on Ti3AlC2 and Ti2AlC. The interface between the β-SiC(111) and Tin+1AlCn (0001) (n = 1,2) surfaces is most likely a stable interface because of the small misfit in lattice constants. Six different interface models between β-SiC(111) and Tin+1AlCn(0001) are examined. The optimized interfacial distances are determined using the universal binding energy relation method, and then each model is fully relaxed to calculate work of adhesion. By comparison, it is determined that the junctions connecting the C-terminated SiC(111) and Ti-terminated Tin+1AlCn(0001) surfaces are the most stable structures. Then the electronic structures for this interface model of Ti3AlC2/SiC are analyzed from the density of states, atomic charges, total electron densities and electron density difference. The elastic moduli are also computed in this study, and the data show that the mechanical properties for the composite Tin+1AlCn/SiC slab are between those of bulk Tin+1AlCn and β-SiC, with enhanced plasticity. Finally, the results for β-SiC/Tin+1AlCn are extended to study the interfacial stabilization of β-SiC ceramics and the wider class of Mn+1AlCn phase coatings (M = Sc, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; n = 1,2). It is found that SiC ceramics may be effectively joined by Mn+1AlCn with stable interfacial chemical bonding, which provides a theoretical basis for the effective junction in SiC composites.

    关键词： MAX phases,First-principles,SiC,Interfacial stabilization,Elastic modulus

    更新于2025-09-04 15:30:14

  • [IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - A New Series Hybrid DC-DC Converter for Wide Input Range with SiC

    摘要： A new series hybrid DC-DC converter targeting for communication power supply with wide input range is designed in this paper implemented with Silicon Carbide (SiC) power transistor. The proposed hybrid converter is a combination of forward and flyback converter with full usage of transformer energy and optimized efficiency. Forward converter is the main energy delivery part and resonant network is utilized for full energy transferring and soft switching. Forward converter resets the magnetizing energy and delivers it to the output. The forward and flyback part are connected in such a novel way where flyback output is in series with the primary side. A highly compact architecture is realized with single core, multi-winding shared power transformer. Due to low gate charge and parasitic capacitance, SiC devices are premium power transistors for high frequency and high power applications. With a proper transformer design, an efficient series hybrid SiC converter is demonstrated for 100V-to-400V input at 480W output power.

    关键词： Resonant secondary,Series hybrid,SiC,Wide input range,ZCS,cascaded flyback

    更新于2025-09-04 15:30:14

  • [IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Short Circuit Ruggedness of New Generation 1.2 kV SiC MOSFETs

    摘要： New generations of silicon carbide (SiC) based MOSFETs are commercially available from manufacturers featuring smaller chip size with higher power density demonstrating performance improvement compared to their previous generation counterparts. As the size of the chip is small, the volume available to dissipate energy during short-circuit (SC) like conditions is reduced, leading to increased self-heating of the device. Therefore, the short circuit withstand time (SCWT) is reduced. As a reliability aspect, ruggedness to extreme operating conditions like SC needs to be analyzed for these devices, to improve the design or to design better detection and protection circuits for these MOSFETs when used in specific SC vulnerable applications. In this work, the new third generation 1.2 kV SiC MOSFET from Wolfspeed in a TO-247-4 pin package having a smaller chip size is measured for SC ruggedness. The causes for device failure under different DC-link voltages, gate bias voltages, SC pulse durations and self-heating behavior are analyzed based on the destructive SC tests performed. The device is measured to have an SCWT of 2 μs at a DC-link voltage of 800 V compared to SCWT of 4.5 μs for the second generation 1.2 kV devices with larger chip size and TO-247-3 pin package. The presence of the Kelvin source contact demonstrates higher peak SC currents compared to the same devices without Kelvin source.

    关键词： short-circuit ruggedness,SiC MOSFETs,Kelvin source contact,self-heating,failure analysis

    更新于2025-09-04 15:30:14