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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Comparison Study of Surge Current Capability of Body Diode of SiC MOSFET and SiC Schottky Diode
摘要： The superior performance of the SiC MOSFETs operating in synchronous mode converter without external antiparallel SiC Schottky diodes have been demonstrated recently. However, there are few studies of the surge current capability of the SiC MOSFET's body diode, leading severe concern for its ruggedness in practical power converter applications. The purpose of this paper is to experimentally compare the non-repetitive surge current capability of the SiC MOSFET's intrinsic body diode and SiC Schottky diode, and analyze the physical mechanisms of their degradation after surge current stress. Their surge current capability and electrical characteristics before and after surge current stress are measured and analyzed. Experimental study shows that the non-repetitive peak surge current of the SiC MOSFET’s body diode is slightly larger than that of the SiC Schottky diodes. The degradation of the SiC Schottky diode after surge current stress is accompanied with the increase of drain leakage current, while the degradation of the SiC MOSFET after the body diode’s surge current stress is accompanied with the variation of the threshold voltage and input capacitance of the SiC MOSFET. The analysis shows that the degradation of the SiC MOSFET after the surge current stress may be correlated with the interface traps of SiC/SiO2 interface.
关键词： Body diode,SiC Schottky Diode,SiC MOSFET,Surge current
更新于2025-09-23 15:22:29
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Recent Developments Accelerating SiC Adoption
摘要： The benefits of SiC devices for use in power electronics has been long understood, and over 25 years of sustained development in materials and devices has brought adoption to a tipping point [1,15]. It takes the confluence of many separate developments to build the necessary momentum for accelerated adoption, and we will examine these factors.
关键词： SiC MOSFET,SiC reliability,SiC Schottky Diode,SiC gate oxide,SiC Cascode,Supercascode,Silicon Carbide,SiC,SiC packaging,SiC applications,SiC epitaxy,SiC substrates
更新于2025-09-09 09:28:46
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Conduction mechanisms of the reverse leakage current of 4H-SiC Schottky barrier diode
摘要： A new numerical method for determining the reverse transition voltage between thermionic and tunneling mechanisms has been performed for 4H-SiC Schottky barrier diode. The idea of this method is based on equality between thermionic emission and tunneling process and both of them are combined with barrier lowering model. Application of this method shows a strong discrepancy between our results and that deduced from Padovani-Stratton condition. The reverse transition voltage was found increase linearly with increasing the barrier height, the effective mass and the inverse of doping concentration. In order to predict the reverse transition voltage as a function of temperature, doping concentration and barrier height for 4H-SiC Schottky barrier diode an analytical model has been proposed.
关键词： image force barrier lowering,reverse transition voltage,SiC Schottky diode,thermionic emission,tunneling current
更新于2025-09-04 15:30:14