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Nonstoichiometric amorphous silicon carbide films as promising antireflection and protective coatings for germanium in IR spectral range
摘要： A technology for preparation of amorphous nonstoichiometric hydrogenated silicon carbide (a-SixC1-x:H) films using the PE-CVD method has been developed. Such films with refractive index n = 1.8–2.1 are suitable to obtain antireflection effect on germanium in the IR spectral region. Single- and two-sided antireflection coatings of Ge enabled to increase its optical transmission up to 65% and 96% in the maximum transmission, respectively. The obtained films have good mechanical properties (H > 12 GPa, E = 100 GPa). Presence of Si-C bonds in the a-SixC1-x:H films restricts their range of application to the spectral interval 2.5–10 μm. The prepared films are uniform in composition and have high adhesion to the substrate. Variation of deposition conditions makes it possible to obtain a-SixC1-x:H films having high hardness and Young's modulus. High deposition rate, optimal optical properties of the a-SixC1-x:H films and good combination of mechanical properties for the Ge/a-SixC1-x:H film structures make them to be promising for practical application as antireflection and protective coatings for germanium.
关键词： Germanium,Antireflection coatings,Elements of IR optics,Nonstoichiometric SiC films
更新于2025-09-19 17:15:36
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Nanoforest of 3C–SiC/graphene by laser chemical vapor deposition with high electrochemical performance
摘要： Nanoforests of 3C–SiC/graphene films are prepared by laser chemical vapor deposition (LCVD). The effectiveness of nanoforest-like 3C–SiC/graphene film as electrode materials for supercapacitors has been investigated by cyclic voltammetry and galvanostatic charge-discharge tests in 0.5 M H2SO4 solution. The specific capacitance is 8.533 mF/cm2 at a current density of 20 μA/cm2, which is 15 times higher than of previous reports of composited 3C–SiC/graphene films. The electrode exhibits good rate capability and cycling stability with 90.5% capacitance retention after 10000 cycles. The nanoforest-like 3C–SiC/graphene thick film shows a 3D porous structure with exposed graphene conductive network contributing to the greatly enhanced electrochemical performance in an environmentally aqueous electrolyte. These nanoforest-like 3C–SiC/graphene films can be promising for electrochemical energy storage applications.
关键词： Nanoforest,LCVD,3C–SiC films,Graphene,Electrochemical performance
更新于2025-09-11 14:15:04
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Optical characterization of SiC films grown on Si(111)
摘要： Thin SiC films, grown on Si by substitution of C into Si on Si substrates with and without a SiGe buffer layer, have been investigated with optical techniques. The formation of SiC domains leads to strong green and blue photoluminescence from stacking faults and surface oxides. Introduction of a 10-nm-thick SiGe buffer layer leads to improved crystallinity as evidenced by X-ray diffraction and optical second-harmonic generation (SHG). Nonlinear optical azimuthal rotational spectra demonstrate the presence of cubic SiC in the film. Furthermore, angle-of-incidence scans are consistent with simulations based on a film with cubic symmetry which demonstrates that the cubic phase dominates the SiC film. Growth on vicinal Si(111) leads to a SiC film with the same c1v symmetry as the substrate, demonstrating that the lattice planes of the SiC film follow those of the Si substrate. Spatially resolved SHG scans show structures that are related to the underlying structure of the Si interface resulting from the growth process.
关键词： second-harmonic generation,optical characterization,SiC films,photoluminescence,crystallinity
更新于2025-09-10 09:29:36