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Surface Coatings Modulate the Differences in the Adhesion Forces of Eukaryotic and Prokaryotic Cells as Detected by Single Cell Force Microscopy
摘要： Single cell force microscopy was used to investigate the maximum detachment force (MDF) of primary neuronal mouse cells (PNCs), osteoblastic cells (MC3T3), and prokaryotic cells (Staphylococcus capitis subsp. capitis) from different surfaces after contact times of 1 to 5 seconds. Positively charged silicon nitride surfaces were coated with positively charged polyethyleneimine (PEI) or poly-D-lysine. Laminin was used as the second coating. PEI induced MDFs of the order of 5 to 20 nN, slightly higher than silicon nitride did. Lower MDFs (1 to 5 nN) were detected on PEI/laminin with the lowest on PDL/laminin. To abstract from the individual cell properties, such as size, and to obtain cell type-specific MDFs, the MDFs of each cell on the different coatings were normalized to the silicon nitride reference for the longest contact time. The differences in MDF between prokaryotic and eukaryotic cells were generally of similar dimensions, except on PDL/laminin, which discriminated against the prokaryotic cells. We explain the lower MDFs on laminin by the spatial prevention of the electrostatic cell adhesion to the underlying polymers. However, PEI can form long flexible loops protruding from the surface-bound layer that may span the laminin layer and easily bind to cellular surfaces and the small prokaryotic cells. This was reflected in increased MDFs after two-second contact times on silicon nitride, whereas the two-second values were already observed after one second on PEI or PEI/laminin. We assume that the electrostatic charge interaction with the PEI loops is more important for the initial adhesion of the smaller prokaryotic cells than for eukaryotic cells.
关键词： prokaryotic cells,poly-D-lysine,silicon nitride,laminin,cell adhesion,single cell force microscopy,surface coatings,polyethyleneimine,eukaryotic cells,maximum detachment force
更新于2025-11-21 11:24:58
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Hot wire chemical vapor deposition for silicon photonics: An emerging industrial application opportunity
摘要： In this work different silicon photonic devices, including straight waveguides, multi-mode interference devices and Mach-Zehnder interferometers, were fabricated and characterized on hot-wire chemical vapor deposition (HWCVD) silicon nitride (SiN) layers deposited at temperatures below 350 °C. These layers presented a hydrogen concentration of 13.1%, which is lower than that achieved with plasma enhanced chemical vapor deposition at these deposition temperatures. The lowest reported optical propagation losses of 6.1 dB/cm and 5.7 dB/cm, 1550 nm and 1310 respectively, for straight SiN waveguides prepared by HWCVD was measured. We demonstrated that silicon nitride SiN, prepared using HWCVD, is a viable material for silicon photonics fabrication.
关键词： Multimode interferometer,Silicon photonics waveguides,Silicon photonics,Hot wire chemical vapor deposition,Silicon nitride,Mach-Zehnder interferometer
更新于2025-11-21 11:20:42
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Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition
摘要： Films of silicon nitride SiNx, obtained by plasma-enhanced chemical vapor deposition from the monosilane SiH4 and ammonia NH3 gases, are widely used in microelectronics and micro- and nanoelectromechanical systems. Residual mechanical stresses and film composition are important characteristics for many applications. The properties of SiNx films, particularly mechanical stresses and composition, depend largely on the conditions of production, e.g., the ratio of the reacting gas flow rates, the composition of the gas mixture, the power and frequency of the plasma generator, and the temperature and pressure during deposition. Despite the great volume of works on the subject, data regarding the dependence of the properties and composition of SiNx films on the conditions of production remain sparse. This work considers the effect the ratio of the reacting gas flow rates has on the mechanical stresses and composition of silicon nitride films SiNx obtained by plasma-enhanced chemical vapor deposition from gaseous mixtures of SiH4 monosilane and NH3 ammonia using low-frequency plasma. It is found that when the ratio of the gas flow rates of SiH4 and NH3 is raised from 0.016 to 0.25, the compressive mechanical stresses are reduced by 31%, the stoichiometric coefficient falls from 1.40 to 1.20, the refractive index rises from 1.91 to 2.08, the concentration of N–H bonds is reduced by a factor of 7.4, the concentration of Si–H bonds grows by a factor of 8.7, and the concentration of hydrogen atoms is reduced by a factor of 1.5. These results can be used for the controlled production of SiNx films with such specified characteristics as residual mechanical stresses, refractive index, stoichiometric coefficient, and the concentration of hydrogen-containing bonds.
关键词： mechanical stresses,optical profilometry,films of PECVD silicon nitride SiNx,IR Fourier spectroscopy
更新于2025-11-14 15:18:02
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Preparation of α‐Si <sub/>3</sub> N <sub/>4</sub> by direct nitridation using the polysilicon waste by diamond wire cutting
摘要： With the rapid development of the semiconductor industry and solar photovoltaic industry, a large number of polysilicon wastes from diamond wire cutting are accumulated, which not only pollute the environment, but also cause safety problems due to the ultrafine particle size and high reactivity. The diamond wire cutting polysilicon waste was used to prepare α-Si3N4 by direct nitridation method. This method could not only fully recycle the waste and reduce environmental pollution, but also reduce the production cost of α-Si3N4. Furthermore, the effects of FeCl3, NaCl and metal Cu on the nitridation of polysilicon waste are investigated in detail, respectively. It is found that FeCl3 and NaCl are not ideal additives for the preparation of α-Si3N4. However, α-Si3N4 dominated Si3N4 can be obtained via adding 5 wt. % Cu after nitridation at 1250 oC for 8 h, and the relative content of α-Si3N4 reaches 92.37 %.
关键词： silicon nitride,crystal growth,nitridation,catalysts/catalysis,powders
更新于2025-11-14 14:48:53
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Combustion synthesis of α-Si3N4 with green additives
摘要： This paper reports the combustion synthesis of α-Si3N4 using green additives of water and alcohol. The addition of water and alcohol is demonstrated to be effective in controlling the reaction kinetics and improving the formation of α-Si3N4 by vapor reactions. With increasing proportion of additives in the starting composition, the content of α-Si3N4 in the product is clearly enhanced. In contrast to the ammonium halides usually employed as additives in the combustion synthesis of α-Si3N4, the green additives used here are nontoxic, noncorrosive, and thus more attractive for industrial applications.
关键词： Silicon nitride,Combustion synthesis
更新于2025-09-23 15:23:52
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Effect of nitrogen gas pressure during heat treatment on the morphology of silicon nitride fibers synthesized by carbothermal nitridation
摘要： The effects of N2 gas pressure on the diameter and morphology of Si3N4 fibers obtained via carbothermal nitridation were investigated. Sol–gel-derived precursors containing a silica and carbon mixture were placed in an Al2O3 crucible and heat-treated under various N2 pressures from 0.1 to 0.5 MPa at 1500oC. The heat-treated samples were characterized by X-ray diffraction (XRD), a scanning electron microscope (SEM) coupled with an energy dispersion X-ray (EDX) spectrometer, and transmission electron microscopy (TEM). Various nitride fibers with α- and β-phase Si3N4 were formed. The fiber diameter decreased with increases in N2 pressure, and nanometer-scale fibers of around 200 nm in diameter were obtained at a N2 pressure of 0.5 MPa. It was found that silicon oxynitride Si2N2O or its Al-doped form, O′-SiAlON, was produced due to high N2 pressure and doping with Al originating from the Al2O3 crucible. This oxynitride was considered to act as a template for Si3N4 fiber growth by the direct phase transformation mechanism. It was shown that the diameter of the Si3N4 fibers decreased for two reasons: decreased partial pressure of SiO gas due to high N2 pressure and increased formation of the silicon oxynitride templates.
关键词： carbothermal reduction,nanofibers,alumina,Silicon nitride
更新于2025-09-23 15:23:52
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A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications
摘要： Silicon photonics is one of the most prominent technology platforms for integrated photonics and can support a wide variety of applications. As we move towards a mature industrial core technology, we present the integration of silicon nitride (SiN) material to extend the capabilities of our silicon photonics platform. Depending on the application being targeted, we have developed several integration strategies for the incorporation of SiN. We present these processes, as well as key components for dedicated applications. In particular, we present the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use of SiN to realize optical phased arrays in the 800–1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications. These functionalities are demonstrated using a 200 mm complementary metal-oxide-semiconductor (CMOS)-compatible pilot line, showing the versatility and scalability of the Si-SiN platform.
关键词： transceiver,silicon photonics,Kerr nonlinearity,optical phased array,Coarse Wavelength Division Multiplexing (CWDM),multiplexing,LIDAR,silicon nitride,beam steering,frequency comb,grating coupler
更新于2025-09-23 15:22:29
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Flip-Chip Integration of InP and SiN
摘要： We present an interface for hybrid flip-chip integration of InP based laser sources to silicon nitride based photonic platforms. The design enables efficient high optical power coupling over a wide temperature range. The optical modes of laser and SiN chip are expanded using integrated tapers allowing for high alignment tolerance. The chips comprise physical alignment stops for vertical alignment. In the horizontal direction, the integration interface is optimized for active and/or visual alignment with high precision using precise visual alignment marks. The hybrid integrated chip shows a waveguide coupled optical power of more than 40mW and can operate at elevated temperatures up to 85°C.
关键词： silicon photonics,silicon nitride,flip-chip,laser,hybrid integration
更新于2025-09-23 15:22:29
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Silicon nitride photonic integration for visible light applications
摘要： In this article, we provide a review of fabrication platforms and state of the art developments in the area of silicon nitride photonic integrated circuits (PICs) for the visible wavelength range, mostly employed in biomedical and chemical sensing applications. Additionally, we introduce PIX4life, the European pilot line for silicon nitride PICs for visible applications. PIX4life provides a unified framework for the development of such PICs, including design and software, fabrication, characterization and packaging.
关键词： Visible light,Silicon nitride,Photonics,Biophotonics,Microscopy,Sensing
更新于2025-09-23 15:21:21
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Alleviating performance and cost constraints in silicon heterojunction cells with HJT 2.0
摘要： When considering silicon heterojunction technology (HJT) for mass production the most frequently expressed reservations are related to the performance and cost constraints the standard TCO on the cell front side namely thin indium tin oxide (ITO) constitutes. We address these concerns with our HJT 2.0 concept in which the front electrode is made of a bi-layer of ITO that is supplemented by a silicon nitride (SiN) layer. This cell concept was developed to yield an increase in efficiency of typically 0.2% absolute due to improved cell current and a cost saving in the range of 30-40% with respect to cost of ownership (CoO).
关键词： solar cell efficiency,silicon heterojunction technology,cost saving,silicon nitride,indium tin oxide,HJT 2.0
更新于2025-09-23 15:21:01