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Hot wire chemical vapor deposition for silicon photonics: An emerging industrial application opportunity
摘要： In this work different silicon photonic devices, including straight waveguides, multi-mode interference devices and Mach-Zehnder interferometers, were fabricated and characterized on hot-wire chemical vapor deposition (HWCVD) silicon nitride (SiN) layers deposited at temperatures below 350 °C. These layers presented a hydrogen concentration of 13.1%, which is lower than that achieved with plasma enhanced chemical vapor deposition at these deposition temperatures. The lowest reported optical propagation losses of 6.1 dB/cm and 5.7 dB/cm, 1550 nm and 1310 respectively, for straight SiN waveguides prepared by HWCVD was measured. We demonstrated that silicon nitride SiN, prepared using HWCVD, is a viable material for silicon photonics fabrication.
关键词： Multimode interferometer,Silicon photonics waveguides,Silicon photonics,Hot wire chemical vapor deposition,Silicon nitride,Mach-Zehnder interferometer
更新于2025-11-21 11:20:42
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Low-loss and broadband non-volatile phase-change directional coupler switches
摘要： An optical equivalent of the field-programmable gate array (FPGA) is of great interest to large-scale photonic integrated circuits. Previous programmable photonic devices relying on the weak, volatile thermo-optic or electro-optic effect usually suffer from a large footprint and high energy consumption. Phase change materials (PCMs) offer a promising solution due to the large non-volatile change in the refractive index upon phase transition. However, the large optical loss in PCMs poses a serious problem. Here, by exploiting an asymmetric directional coupler design, we demonstrate non-volatile PCM-clad silicon photonic 1 × 2 and 2 × 2 switches with a low insertion loss of ~1 dB and a compact coupling length of ~30 μm while maintaining a small crosstalk less than ?10 dB over a bandwidth of 30 nm. The reported optical switches will function as the building blocks of the meshes in the optical FPGAs for applications such as optical interconnects, neuromorphic computing, quantum computing, and microwave photonics.
关键词： Silicon photonics,Non-volatile,Optical switches,Phase-change materials,Reconfigurable photonics,Integrated photonic devices
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE Photonics Conference (IPC) - Reston, VA (2018.9.30-2018.10.4)] 2018 IEEE Photonics Conference (IPC) - 40Gb/s Carrier Depletion-Based Silicon Micro-Ring Modulators
摘要： A high-speed silicon microring modulator based on a titanium-doped silicon rib waveguide has been demonstrated. Small footprint of 26.5 μm × 26.5 μm with low driving voltage of 1.5 V and 22 dB extinction ratio at 20 Gb/s modulation has been achieved. The high-speed performance is attributed to the low capacitance of the device and the efficient plasma dispersion effect in silicon. Moreover, the modulator exhibits a low propagation loss of 2.5 dB/cm and a high modulation efficiency of 1.5 V·cm. The device is fabricated on a silicon-on-insulator (SOI) wafer with a 220 nm top silicon layer and a 2 μm buried oxide layer. The rib waveguide has a width of 500 nm and a height of 220 nm with a slab height of 150 nm. The titanium doping concentration is 1×10^20 cm^{-3}. The modulator is characterized using a lightwave component analyzer and a high-speed photodetector. The 3-dB bandwidth is measured to be 20 GHz. The eye diagrams at 20 Gb/s show clear eye opening with low jitter. The results indicate that the titanium-doped silicon microring modulator is promising for high-speed optical interconnects.
关键词： high-speed modulation,titanium doping,optical interconnects,silicon photonics,microring modulator
更新于2025-09-23 15:23:52
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Conditions for Parametric and Free-Carrier Oscillation in Silicon Ring Cavities
摘要： We model optical parametric oscillation in ring cavities with two-photon absorption, focusing on silicon at 1.55 μm. Oscillation is possible if free-carrier absorption can be mitigated; this can be achieved using carrier sweep-out in a reverse-biased p-i-n junction to reduce the carrier lifetime. By varying the pump power, detuning, and reverse-bias voltage, it is possible to generate frequency combs in cavities with both normal and anomalous dispersion at a wide range of wavelengths including 1.55 μm. Furthermore, a free-carrier self-pulsing instability leads to rich dynamics when the carrier lifetime is sufficiently long.
关键词： nonlinear optics,Frequency comb,silicon photonics
更新于2025-09-23 15:23:52
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Multi-channel silicon photonic receiver based on compact second-order microring resonators
摘要： A monolithically integrated multi-channel receiver fabricated on the Silicon-on-Insulator (SOI) platform is demonstrated experimentally. This receiver is composed of an eight-channel thermally tunable microring resonator (MRR) filter as the wavelength division multiplexing (WDM) demultiplexer and an array of high speed waveguide-integrated Ge-on-Si photodetectors (PDs) for light detection. Second-order MRRs were utilized in each channel to obtain steeper roll-off from passband to stopband and lower crosstalk. The receiver was fabricated by using CMOS-compatible fabrication process at IME A*STAR. With the thermal tunability, the channel spacing can be adjusted according to different channel grid. Lower than ?30 dB crosstalk and higher than 50 GHz 3-dB bandwidth was obtained for the demultiplexer with a channel spacing of 150 GHz. Proof-of-principle demonstration shows that each channel is capable of operating at a data rate of 10 Gb/s, resulting in an aggregate data rate of 80 Gb/s.
关键词： Silicon photonics,Wavelength division multiplexing,Optical receivers,Microring resonators,Optical interconnects
更新于2025-09-23 15:23:52
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Design of a C-band polarization rotator-splitter based on a mode-evolution structure and an asymmetric directional coupler
摘要： A C-band polarization rotator-splitter based on a mode-evolution structure and an asymmetric directional coupler is proposed. The mode-evolution structure is designed in a bi-level taper through which the TM0 mode can evolve into the TE1 mode. Then the TE1 mode is coupled to the TE0 mode at the cross port using the asymmetric directional coupler. The input TE0 mode propagates along the waveguide without mode conversion and output at the through port. From the experimental results, the extinction ratio is lower than 30 dB and the excess loss is less than 1 dB for input TE0 mode at the whole C-band. For input TM0 mode, the ER and the EL are, respectively, lower than ?10 and 1.5 dB.
关键词： silicon photonics,integrated optic devices,polarization rotator splitters
更新于2025-09-23 15:23:52
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A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications
摘要： Silicon photonics is one of the most prominent technology platforms for integrated photonics and can support a wide variety of applications. As we move towards a mature industrial core technology, we present the integration of silicon nitride (SiN) material to extend the capabilities of our silicon photonics platform. Depending on the application being targeted, we have developed several integration strategies for the incorporation of SiN. We present these processes, as well as key components for dedicated applications. In particular, we present the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use of SiN to realize optical phased arrays in the 800–1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications. These functionalities are demonstrated using a 200 mm complementary metal-oxide-semiconductor (CMOS)-compatible pilot line, showing the versatility and scalability of the Si-SiN platform.
关键词： transceiver,silicon photonics,Kerr nonlinearity,optical phased array,Coarse Wavelength Division Multiplexing (CWDM),multiplexing,LIDAR,silicon nitride,beam steering,frequency comb,grating coupler
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE CPMT Symposium Japan (ICSJ) - Kyoto, Japan (2018.11.19-2018.11.21)] 2018 IEEE CPMT Symposium Japan (ICSJ) - 400G Multi-Mode and Single-Mode Optical Transmitter Realized by Hybrid-Integrated Silicon Interposer for Data Center Application
摘要： We experimentally demonstrated both 400G multi-mode (MM) and single-mode (SM) optical engines based on Silicon interposer to hybrid integrate laser dice, optics, and fiber arrays. The interposer realized by Silicon bulk micro-machining makes the engine very compact and easily assembled by the built-in Silicon precision. Clear optical eyes with TDECQ of 1.7dB and of 2.7 dB are obtained for 50Gb/s VCSEL in MM optical engine and 100Gb/s EML in SM one, respectively.
关键词： Optical Engine,Hybrid-Integration,VCSEL,Optical Sub-Assembly (OSA),and EML Laser,Silicon Interposer,Silicon Photonics
更新于2025-09-23 15:22:29
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Flip-Chip Integration of InP and SiN
摘要： We present an interface for hybrid flip-chip integration of InP based laser sources to silicon nitride based photonic platforms. The design enables efficient high optical power coupling over a wide temperature range. The optical modes of laser and SiN chip are expanded using integrated tapers allowing for high alignment tolerance. The chips comprise physical alignment stops for vertical alignment. In the horizontal direction, the integration interface is optimized for active and/or visual alignment with high precision using precise visual alignment marks. The hybrid integrated chip shows a waveguide coupled optical power of more than 40mW and can operate at elevated temperatures up to 85°C.
关键词： silicon photonics,silicon nitride,flip-chip,laser,hybrid integration
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Cancun (2018.8.29-2018.8.31)] 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Widely Tunable Ce:YIG on Si Microring Isolators for TE Mode Operation
摘要： We demonstrate fully integrated optical isolators using bonded Ce:YIG on silicon microrings with an integrated electromagnet. The isolator operates for TE mode input light and can be tuned between 1540 to 1580nm with >20dB isolation.
关键词： microring,isolator,silicon photonics
更新于2025-09-23 15:22:29