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Physical Separation and Beneficiation of End-of-Life Photovoltaic Panel Materials: Utilizing Temperature Swings and Particle Shape
摘要： One of the technical challenges with the recovery of valuable materials from end-of-life (EOL) photovoltaic (PV) modules for recycling is the liberation and separation of the materials. We present a potential method to liberate and separate shredded EOL PV panels for the recovery of Si wafer particles. The backing material is removed by submersion in liquid nitrogen, while the encapsulant is removed by pyrolysis. After pyrolysis, separation of the liberated particles (i.e., Si wafer and glass) is carried out by using particle size and shape with mechanical screening. Using this robust approach, a Si wafer grade of 86% and a recovery of 88% were achieved.
关键词： Recycling,Silicon,Particle shape,Photovoltaic panels,Silicon compounds,Temperature swings
更新于2025-09-23 15:21:01
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The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0 0 0 1) Si-face substrates
摘要： In this paper, homoepitaxial growth was performed on on-axis, 4° and 8° o?-axis 4H-SiC (0001) Si-face substrate by using our home-made vertical hot wall LPCVD reactor and SiH4 + C2H4 + H2 + HCl gas system. The in?uence mechanism of growth temperature on the crystal quality, the growth rate and surface morphology is studied. The growth rate increased with the increase of growth temperature, and the epitaxial wafer surface morphology is more excellent by the increasing of o?-angle. The results demonstrate that growth temperature is a fundamental process parameter to optimize.
关键词： A3. Chemical vapor deposition processes,A2. Growth from vapor,A1. Characterization,B2. Semiconducting silicon compounds
更新于2025-09-04 15:30:14