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Infrared Light Management Using a Nanocrystalline Silicon Oxide Interlayer in Monolithic Perovskite/Silicon Heterojunction Tandem Solar Cells with Efficiency above 25%
摘要： Perovskite/silicon tandem solar cells are attractive for their potential for boosting cell efficiency beyond the crystalline silicon (Si) single-junction limit. However, the relatively large optical refractive index of Si, in comparison to that of transparent conducting oxides and perovskite absorber layers, results in significant reflection losses at the internal junction between the cells in monolithic (two-terminal) devices. Therefore, light management is crucial to improve photocurrent absorption in the Si bottom cell. Here it is shown that the infrared reflection losses in tandem cells processed on a flat silicon substrate can be significantly reduced by using an optical interlayer consisting of nanocrystalline silicon oxide. It is demonstrated that 110 nm thick interlayers with a refractive index of 2.6 (at 800 nm) result in 1.4 mA cm?2 current gain in the silicon bottom cell. Under AM1.5G irradiation, the champion 1 cm2 perovskite/silicon monolithic tandem cell exhibits a top cell + bottom cell total current density of 38.7 mA cm?2 and a certified stabilized power conversion efficiency of 25.2%.
关键词： monolithic perovskite/silicon tandem solar cells,infrared photocurrent absorption,nanocrystalline silicon oxide interlayers
更新于2025-10-22 19:40:53
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Germanium catalyzed vapor–liquid–solid growth and characterization of amorphous silicon oxide nanotubes: comparison to the growth of its nanowires
摘要： One-dimensional (1D) nanostructures were grown with a simple technique using continuous-wave laser vaporization of a Ge target containing 5 at.% Si in high-pressure (up to 0.9 MPa) Ar gas atmosphere. A maximum amount (~ 30% of all products) of 1D nanostructures was obtained at 0.9 MPa and these nanostructures were identified as amorphous silicon oxide (SiOx) nanotubes (NTs) and attached with crystalline Ge-rich NPs with elongated prolate-like or sphere-like shapes at their tips by transmission electron microscopy (TEM), high-angle annular dark-field-scanning TEM, and energy dispersive X-ray line scan spectrometry. As the Ar pressure decreased from 0.9 to 0.03 MPa, the average diameters, wall thicknesses, and lengths of the NTs decreased from 57.9 to 22.9 nm, 13.2 to 6.7 nm, and 2.1 to 0.2 μm, respectively, and the tip NP size decreased from 139.0 to 41.7 nm. There was a strong correlation among the diameters, wall thicknesses, and lengths of the NTs and tip Ge NP sizes, indicating the role of molten Ge NPs as catalyst seeds for the precipitation of SiOx in a vapor–liquid–solid growth mechanism at high temperature. The SiOx precipitation quantities from the seed NPs for the NTs were compared with those of amorphous SiOx nanowires (NWs) at 0.1–0.9 MPa to clarify the growth mechanism of the NTs. We argue that smaller precipitation quantities of SiOx than those for the NWs play a critical role in the formation of cap structures with different sizes and shapes from the molten Ge NPs and the growth of the NTs.
关键词： Laser vaporization,Germanium catalyst,Silicon oxide,Nanotube,Nanowire
更新于2025-09-23 15:23:52
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Doped hydrogenated nanocrystalline silicon oxide layers for higha??efficiency ca??Si heterojunction solar cells
摘要： Hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) layers exhibit promising optoelectrical properties for carrier-selective-contacts in silicon heterojunction (SHJ) solar cells. However, achieving high conductivity while preserving crystalline silicon (c-Si) passivation quality is technologically challenging for growing thin layers (less than 20 nm) on the intrinsic hydrogenated amorphous silicon ((i)a-Si:H) layer. Here, we present an evaluation of different strategies to improve optoelectrical parameters of SHJ contact stacks founded on highly transparent nc-SiOx:H layers. Using plasma-enhanced chemical vapor deposition, we firstly investigate the evolution of optoelectrical parameters by varying the main deposition conditions to achieve layers with refractive index below 2.2 and dark conductivity above 1.00 S/cm. Afterwards, we assess the electrical properties with the application of different surface treatments before and after doped layer deposition. Noticeably, we drastically improve the dark conductivity from 0.79 to 2.03 S/cm and 0.02 to 0.07 S/cm for n- and p-contact, respectively. We observe that interface treatments after (i)a-Si:H deposition not only induce prompt nucleation of nanocrystals but also improve c-Si passivation quality. Accordingly, we demonstrate fill factor improvement of 13.5%abs from 65.6% to 79.1% in front/back-contacted solar cells. We achieve conversion efficiency of 21.8% and 22.0% for front and rear junction configurations, respectively. The optical effectiveness of contact stacks based on nc-SiOx:H is demonstrated by averagely 1.5-mA/cm2 higher short-circuit current density thus nearly 1%abs higher cell efficiency as compared with the (n)a-Si:H.
关键词： silicon heterojunction (SHJ),carrier-selective-contacts (CSCs),interface treatments,optoelectrical properties,hydrogenated nanocrystalline silicon oxide (nc-SiOx:H)
更新于2025-09-23 15:19:57
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Front contact optimization for rear-junction SHJ solar cells with ultra-thin n-type nanocrystalline silicon oxide
摘要： In this work, ultra-thin n-type hydrogenated nanocrystalline silicon oxide [(nc-SiOx:H (n)] film was used to replace amorphous silicon [a-Si:H (n)] as electron transport layer (ETL) in rear-junction silicon heterojunction (SHJ) solar cell to reduce front parasitic absorption. The contact resistivity between the transparent conductive oxide (TCO) and ultra-thin ETL interface plays an important role on the cell performance. A nanocrystalline silicon (nc-Si:H) contact or seed layer was introduced in the solar cell with ultra-thin nc-SiOx:H and the impact of the nc-Si:H thickness on the cell performance was investigated. To demonstrate scalability, bifacial solar cells with 10 nm ETL were fabricated on the M2 (244 cm2) wafer. The best cell performance is obtained by the solar cell with 5 nm nc-SiOx:H (n) and 5 nm nc-Si:H (n) contact layer and it exhibits open-circuit voltage (Voc) of 738 mV, fill factor (FF) of 80.4%, short-circuit current density (Jsc) of 39.0 mA/cm2 and power conversion efficiency (η) of 23.1% on M2 wafer. Compared to the one with nc-SiOx:H (n), an increase of 3%abs of FF and 0.5%abs of η and lower front contact resistivity is demonstrated for the solar cells with nc-Si:H (n) / nc-SiOx:H (n) double layer, which is caused by the lower energy barrier for electrons, according to the band diagram calculated by the AFORS-HET simulator. A simulation on the solar cell optical and electrical losses was done by the Quokka 3 simulator and shows much lower electrical transport loss and a bit higher front surface transmission loss for the one with double layer than nc-SiOx:H (n) single layer.
关键词： Loss analysis,Nanocrystalline silicon oxide,Silicon heterojunction solar cells,Electron transport layer
更新于2025-09-23 15:19:57
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Phosphorus treatment to promote crystallinity of the microcrystalline silicon front contact layers for highly efficient heterojunction solar cells
摘要： The current loss is mainly due to the reflection and the parasitic absorption in the indium tin oxide (ITO) and amorphous silicon (a-Si:H) in the front side of silicon heterojunction (SHJ) solar cells. In this paper, we implemented n-type hydrogenated microcrystalline silicon oxide (n-μc-SiOx:H) as the front surface field (FSF) to improve the short-circuit current density (JSC) of SHJ solar cells. The advantage of employing n-μc-SiOx:H layer is due to its low optical absorption coefficient and tunable refractive index. However, the introduction of carbon dioxide increases light transmission but reduces the crystallinity of n-μc-SiOx:H layer. Meanwhile, inhibiting the incubation layer and increasing microcrystalline/amorphous mixture phase during the growth are critical to the solar cell performance. Therefore, we implemented a high phosphorus-doping seed layer to form a nucleation layer to improve the crystallinity of n-μc-SiOx:H layer. In addition, the plasma enhanced chemical vapor deposition (PECVD) process parameters of each layer were optimized to obtain good optical and electrical properties of n-μc-SiOx:H layer. Finally, a 242.5 cm2 solar cell had been fabricated with conversion efficiency of 23.87%, open-circuit voltage (VOC) of 739.8 mV, fill factor (FF) of 82.33% and JSC of 39.19 mA/cm2, which was 0.31 mA/cm2 higher than that of the conventional n type a-Si:H SHJ solar cells.
关键词： Phosphorus treatment,SHJ solar cells,Crystalline volume fraction,Microcrystalline silicon oxide
更新于2025-09-23 15:19:57
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The Effect of Crystallographic Orientation and Nanoscale Surface Morphology on <i>Poly</i> -Si/SiO <i> <sub/>x</sub></i> Contacts for Silicon Solar Cells
摘要： High-efficiency crystalline silicon (Si) solar cells require textured surfaces for efficient light trapping. However, passivation of a textured surface to reduce carrier recombination is difficult. Here, we relate the electrical properties of cells fabricated on a KOH-etched, random pyramidal textured Si surface to the nanostructure of the passivated contact and the textured surface morphology. The effects of both microscopic pyramidal morphology and nanoscale surface roughness on passivated contacts consisting of a polycrystalline Si (poly-Si) deposited on top of an ultrathin, 1.5–2.2 nm, SiOx layer is investigated. Using atomic force microscopy we show a pyramid face, which is predominantly a Si(111) plane to be significantly rougher than a polished Si(111) surface. This roughness results in a nonuniform SiOx layer as determined by transmission electron microscopy (TEM) of a poly-Si/SiOx contact. Our device measurements also show an overall more resistive, and hence thicker SiOx layer over the pyramidal surface as compared to a polished Si(111) surface, which we relate to increased roughness. Using electron-beam-induced current measurements of poly-Si/SiOx contacts we further show that the SiOx layer near the pyramid valleys is preferentially more conducting, and hence likely thinner than over pyramid tips, edges and faces. Hence, both the microscopic pyramidal morphology and nanoscale roughness lead to nonuniform SiOx layer, thus leading to poor poly-Si/SiOx contact passivation. Finally, we report >21% efficient and ≥80% fill-factor front/back poly-Si/SiOx solar cells on both single-side and double-side textured wafers without the use of transparent conductive oxide layers and show that the poorer contact passivation on a textured surface is limited to boron-doped poly-Si/SiOx contacts.
关键词： passivated contact,tunneling,silicon oxide,electron beam induced current,silicon solar cell,surface orientation,atomic force microscopy
更新于2025-09-19 17:13:59
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In-situ Process to Form Passivated Tunneling Oxides for Front-surface Field in Rear-emitter Silicon Heterojunction Solar Cells
摘要： A novel approach involving CO2 plasma treatment of intrinsic hydrogenated amorphous silicon was developed to form ultra-thin silicon oxide (SiOx) layers, that is, passivated tunneling layers (PTLs), for the fabrication of passivated tunneling contacts. These contacts were formed by depositing the PTL/n-type hydrogenated nano-crystalline layer (nc-Si:H(n))/c-Si(n) stacks. The results indicated that a higher CO2 plasma treatment pressure was preferred for the formation of oxygen-richer components in the silicon oxide films, with Si2+, Si3+, and Si4+ peaks, and a smoother PTL/c-Si heterointerface. The PTLs with higher oxidation states and lower surface roughness exhibited advantages for the c-Si surface passivation, with a maximum implied open-circuit voltage of approximately 743 mV. The lowest contact resistivity of approximately 60 mΩcm2 was obtained using nc-Si:H(n)/PTL/c-Si(n) as the passivated tunneling contact. Most importantly, the in-situ process can help prevent the contamination of the heterointerface during device fabrication processes.
关键词： Passivated tunneling layer (PTL),Silicon oxide (SiOx),CO2 plasma treatment,Silicon surface passivation
更新于2025-09-11 14:15:04
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AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - P-type SiOx front emitters for Si heterojunction solar cells
摘要： We have applied p-type nanocrystalline silicon-oxide (p-SiOx) as front emitter in silicon heterojunction solar cells. The evolution of structural, optical, and electrical properties of p-SiOx as a function of the carbon-dioxide/silane flow rate ratio used in the gas mixture has been investigated, comparing also the film characteristics with those of p-type amorphous and nanocrystalline silicon thin films often used in the cells. Selected p-SiOx films with suitable electrical properties have been inserted in silicon heterojunction solar cells based on n-type FZ c-Si <100> wafers, passivated with ultrathin intrinsic a-Si:H buffers. Improvement of all the photovoltaic parameters has been observed with the emitter with higher oxygen content. The results have been correlated with the increased transparency and enhanced field-effect passivation obtained thanks to the presence of sufficient carbon dioxide in the gas mixture for the p-SiOx layer growth.
关键词： field-effect passivation,silicon heterojunction solar cells,p-type nanocrystalline silicon-oxide,optical and electrical properties,carbon-dioxide/silane flow rate ratio
更新于2025-09-11 14:15:04
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Microstructured SiOx thin films deposited from hexamethyldisilazane and hexamethyldisiloxane using atmospheric pressure thermal microplasma jet
摘要： Microstructured silicon oxide (SiOx) thin films were deposited on glass and metal substrates from 1,1,1,3,3,3-hexamethyldisilazane (HMDSN) and hexamethyldisiloxane (HMDSO) by using atmospheric-pressure thermal microplasma jet. Two kinds of string-like products, randomly bent string-like products and linear string-like products, were deposited and they formed microstructured films. The bent string-like products formed labyrinth-like structures and the linear string-like products lay in parallel to form a large aligned structure. The width of both the bent and linear string-like products was from 1 to 3 μm, regardless of the kind of the precursor but depending on the plasma irradiation conditions. The influence of various surface microstructure of substrates on the formation of the SiOx microstructure was investigated to make clear the mechanism for the formation of the microstructures.
关键词： Atmospheric pressure microplasma,Thin film,Microstructure,Silicon oxide
更新于2025-09-10 09:29:36
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Influence of Al/Si atomic ratio on optical and electrical properties of magnetron sputtered Al1-xSixOy coatings
摘要： This work presents a study on the influence of the Al/Si atomic ratio in dc magnetron sputtered Al1-xSixOy amorphous and transparent films upon their chemical composition, films’ structure, optical and electrical properties. Increasing silicon in Al1-xSixOy films, from 0 at. % up to 31.1 at. %, caused an increment of deposition rate and an increment in Al-O-Si energy bonds as confirmed by X-Ray Photoelectron Spectroscopy (XPS) analysis. On other hand, the optical constants (refractive index (n) and extinction coefficient (k)), dielectric constant, loss tangent (tan δ) and ac conductivity (σac) decrease when the amount of silicon in films increased. The results show that the refractive index shows small variations from linearity with vol% of Al2O3 (or SiO2). Dielectric constant and dielectric loss evidenced two dipolar contributions, attributed to defects located one at or near the substrate/oxide interface, and the other in the bulk of the oxide.
关键词： Electrical conductivity,Sputtering,Dielectric properties,Aluminum silicon oxide,Optical properties
更新于2025-09-09 09:28:46