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Numerical and experimental study on keyhole and melt flow dynamics during laser welding of aluminium alloys under subatmospheric pressures
摘要： Porosity defects was highly related to the keyhole and melt flow dynamic during laser welding process. In this paper, a novel 3D numerical model was developed to describe the keyhole dynamic and melt flow behaviors during laser welding of 5A06 aluminium alloy under subatmospheric pressures. The effect of ambient pressure on laser welding process was taken into consideration by optimizing the boiling point of aluminium alloy and recoil pressure of evaporated metallic vapor jets based on vapor–liquid equilibria calculation and Wilson equation. A moving hybrid heat source model was employed to describe the laser energy distribution under subatmospheric pressures. Numerical results indicated that a wider and deeper keyhole with less humps was produced under subatmospheric pressure comparing with that of atmospheric pressure. The vortices in the rear keyhole wall became unapparent or even disappeared with the decrease of ambient pressures. The melt flow velocity on the keyhole wall was larger under a lower pressure. A smaller difference between boiling point and melting point was produced and this led to the formation of a thinner keyhole wall and improved the stability of molten pool. Larger recoil pressure produced under subatmospheric pressure was responsible for the weakened vortices and enhanced melt flow velocity. Bigger keyhole opening size, larger melt flow velocity, thinner keyhole and the weakened vortices all resulted into the reduction of porosity defects during laser welding of aluminium alloys. Based on the simulation results, the plasma distribution, weld formation and porosity defects had been demonstrated. The compared results showed that the simulation results exhibited good agreements with the experimental ones.
关键词： Porosity defects,Keyhole stability,Numerical simulation,Subatmospheric pressure,Melt flow dynamic,Laser welding
更新于2025-11-28 14:24:20
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In-situ Measurements and Thermo-mechanical Simulation of Ti-6Al-4V Laser Solid Forming Processes
摘要： Residual stresses and distortions are two technical obstacles for popularizing the Additive Manufacturing (AM) technology. The evolution of the stresses in AM components during the thermal cycles of the metal depositing process is not yet clear, and more accurate in-situ measurements are necessary to calibrate and validate the numerical tools developed for its simulation. In this work a fully coupled thermo-mechanical analysis to simulate the Laser Solid Forming (LSF) process is carried out. At the same time, an exhaustive experimental campaign is launched to measure the temperature evolution at different locations, as well as the distortions and both the stress and strain fields. The thermal and mechanical responses of single-wall coupons under different process parameters are recorded and compared with the numerical models. Good agreement between the numerical results and the experimental measurements is obtained. Sensitivity analysis demonstrates that the AM process is significantly affected by the laser power and the feeding rate, while poorly influenced by the scanning speed.
关键词： Numerical simulation,Laser Solid Forming (LSF),Thermo-mechanical analysis,Additive manufacturing (AM),In-situ measurements of residual stresses
更新于2025-11-28 14:24:20
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Opto-thermally Excited Fabry-Perot Resonance Frequency Behaviors of Clamped Circular Graphene Membrane
摘要： An opto-thermally excited optical fiber Fabry-Perot (F-P) resonant probe with suspended clamped circular graphene diaphragm is presented in this paper. Then, the dependence of resonance frequency behaviors of graphene diaphragm upon opto-mechanical factors including membrane properties, laser excitation parameters and film boundary conditions are investigated via COMSOL Multiphysics simulation. The results show that the radius and thickness of membrane will linearly affect the optical fiber light-induced temperature distribution, thus resulting in rapidly decreasing resonance frequency changes with the radius-to-thickness ratio. Moreover, the prestress can be regulated in the range of 108 Pa to 109 Pa by altering the environmental temperature with a scale factor of 14.2 MPa/K. It is important to note that the availability of F-P resonant probe with a defective clamped circular graphene membrane can be improved notably by fabricating the defected circular membrane to a double-end clamped beam, which gives a broader perspective to characterize the resonance performance of opto-thermally excited F-P resonators.
关键词： opto-thermal actuation,graphene membrane,Fabry-Perot resonator,resonance frequency simulation
更新于2025-11-28 14:23:57
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Device simulation of Cu(In,Ga)Se2 solar cells by means of voltage dependent admittance spectroscopy
摘要： The simulation of solar cell devices is important for the understanding of defect physics and loss mechanisms in real solar cells. On the other hand, voltage dependent admittance spectroscopy delivers essential information for establishing a baseline simulation model of Cu(In,Ga)Se2 (CIGSe) solar cells. Here we give an explanation for the weak temperature dependence of the N1-signal, the latter being not compatible with a bulk defect or with a simple hole barrier at the Mo back contact. Furthermore, we find a Ed,IF – EV ≈ 0.3 eV deep recombination-active acceptor state at the absorber/buffer interface made of air-light exposed CIGSe absorbers. This gives us the ability to explain the reduction of power conversion efficiency of solar cells made from air-light exposed absorbers. From the voltage dependent capacitance step of this interface defect we can deduce the formerly unknown position of the Fermi level at the hetero junction in equilibrium which is close to mid-gap. Simulation of dark J-V curves allows a refinement of the parameter of this absorber/buffer interface defect, resulting in a defect density of Nd,IF ≈ 3.5·1011 cm-2 as well as capture cross sections of σn ≈ 4·10-16 cm2 for electrons and σp ≈ 3·10-11 cm2 for holes.
关键词： device simulation,Cu(In,Ga)Se2,admittance spectroscopy,defect physics,solar cells
更新于2025-11-14 17:28:48
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Bulk luminescent solar concentrators based on organic-inorganic CH3NH3PbBr3 perovskite fluorophores
摘要： In this paper, we report characterization and performance results of lead bromide perovskite luminescent solar concentrator. CH3NH3PbBr3 fluorophores are synthesized by sonication method and examined by their X-ray diffraction pattern and scanning electron microscopy. Synthesized perovskite shows excitonic absorption at 524 nm and PL emission peak located at 532 nm with a Stokes shift around 8 nm. Micron-sized fluorophores are dissolved in prepared solutions and uniformly embedded in PMMA host with 0.006–0.120%wt concentration. Then, Fabricated devices are cut into 50 × 30 × 5 mm cuboid shapes and placed in a mirror surrounded configuration with an attached photovoltaic cell. Fabricated device is put under standard AM1.5 illumination and the output spectrum from the concentrator is acquired. Re-absorption in the samples is also measured by variable optical path method, showing red-shifts up to 13 nm in the output spectrum. Spatially resolved photo-luminescence maps and optical efficiencies are also presented for each sample. Plus, a Monte-Carlo ray tracing algorithm is developed to assist better understanding the experimental results. Stability of fabricated samples are evaluated under high intensity UV illumination, reporting efficiency reduction around 15% after 24 h. Finally, Comparing current-voltage characterization of the attached photovoltaic cell reveals optimized efficiency enhancement in the 0.04%wt sample above 65%.
关键词： Perovskites,Monte-Carlo simulation,Re-absorption,Luminescent solar concentrators,Photovoltaic conversion efficiency,Solar cells
更新于2025-11-14 15:30:11
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Assessment of Bulk and Interface Quality for Liquid Phase Crystallized Silicon on Glass
摘要： This paper reports on the electrical quality of liquid phase crystallized silicon (LPC-Si) on glass for thin-film solar cell applications. Spatially resolved methods such as light beam induced current (LBIC), microwave photoconductance decay (MWPCD) mapping, and electron backscatter diffraction were used to access the overall material quality, intra-grain quality, surface passivation, and grain boundary (GB) properties. LBIC line scans across GBs were fitted with a model to characterize the recombination behavior of GBs. According to MWPCD measurement, intra-grain bulk carrier lifetimes were estimated to be larger than 4.5 μs for n-type LPC-Si with a doping concentration in the order of 1016 cm?3. Low-angle GBs were found to be strongly recombination active and identified as highly defect-rich regions which spatially extend over a range of 40–60 μm and show a diffusion length of 0.4 μm. Based on absorber quality characterization, the influence of intra-grain quality, heterojunction interface, and GBs/dislocations on the cell performance were separately clarified based on two-dimensional (2-D)-device simulation and a diode model. High back surface recombination velocities of several 105 cm/s are needed to get the best match between simulated and measured open circuit voltage (Voc), indicating back surface passivation problem. The results showed that Voc losses are not only because of poor back surface passivation but also because of crystal defects such as GBs and dislocation.
关键词： Bulk lifetime,heterojunction,grain boundaries (GBs),two-dimensional (2-D)-device simulation,liquid phase crystallized silicon (LPC-Si),light beam induced current (LBIC)
更新于2025-11-14 15:25:21
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Image Color Conversion by Illumination
摘要： We developed a software program to imitate the color of an object within the range of sRGB on a PC display. The obtained colors were converted from the picture information taken under a white light source, such as D65. Other, arbitrary light sources such as natural sunlight or standard illuminants, could be used in addition to the test illumination. Judging from the sample of the converted pictures, the software functions quite well.
关键词： Simulation,Picture,Color conversion,Spectrum,Illumination,D65
更新于2025-09-23 15:23:52
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Simulation of GaAs Nanowire Growth and Crystal Structure
摘要： Growing GaAs nanowires with well defined crystal structures is a challenging task, but may be required for the fabrication of future devices. In terms of crystal phase selection, the connection between theory and experiment is limited, leaving experimentalists with a trial and error approach to achieve the desired crystal structures. In this work, we present a modelling approach designed to provide the missing connection, combining classical nucleation theory, stochastic simulation and mass transport through the seed particle. The main input parameters for the model are the flows of the growth species and the temperature of the process, giving the simulations the same flexibility as experimental growth. The output of the model can also be directly compared to experimental observables, such as crystal structure of each bilayer throughout the length of the nanowire and the composition of the seed particle. The model thus enables for observed experimental trends to be directly explored theoretically. Here, we use the model to simulate nanowire growth with varying As flows, and our results match experimental trends with good agreement. By analysing the data from our simulation, we find theoretical explanations for these experimental results, providing new insights into how the crystal structure is affected by the experimental parameters available for growth.
关键词： Wurtzite,Zinc Blende,GaAs,Nanowire,Simulation
更新于2025-09-23 15:23:52
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Detection limit of a VCO based detection chain dedicated to particles recognition and tracking
摘要： A particle detection chain based on CMOS-SOI VCO circuit is presented. The solution is used for the recognition and the tracking of a given particle at circuit level. TCAD simulation of the detector has been performed on a 3x3 matrix of diodes based detector for particles recognition and tracking. The current response of the detector has been used for a case study in order to determine the ability of the chain to recognize an alpha particle crossing a 3x3 detection cell. The detection limit of the proposed solution is investigated and discussed in this paper.
关键词： TCAD simulation,VCO,particle detector
更新于2025-09-23 15:23:52
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Simulated and observed horizontal inhomogeneities of optical thickness of Arctic stratus
摘要： Two-dimensional (2D) horizontal fields of cloud optical thickness derived from airborne measurements of solar spectral radiance during the Vertical Distribution of Ice in Arctic Clouds (VERDI) campaign (carried out in Inuvik, Canada in April/May 2012) are compared with semi-idealized Large Eddy Simulations (LES) of Arctic stratus performed with the COnsortium for Small-Scale MOdeling (COSMO) atmospheric model. The input for the LES is obtained from collocated airborne dropsonde observations. Four consecutive days of a persistent Arctic stratus observed above the sea-ice free Beaufort Sea are selected for the comparison. Macrophysical cloud properties such as cloud top altitude and vertical extent are well captured by COSMO. Cloud horizontal inhomogeneity quantified by the standard deviation and one-dimensional (1D) inhomogeneity parameters show that COSMO produces only half of the measured horizontal cloud inhomogeneities, while the directional structure of the cloud inhomogeneity is well represented by the model. Differences between the individual cases are mainly associated with the wind shear near cloud top and the vertical structure of the atmospheric boundary layer. A sensitivity study changing the wind velocity in COSMO by a vertically constant scaling factor shows that the directional cloud inhomogeneity structures strongly depend on the mean wind speed. A threshold wind velocity is identified, which determines when the cloud inhomogeneity stops increasing with increasing wind velocity.
关键词： airborne measurements,COSMO model,horizontal inhomogeneity,wind speed sensitivity,Large Eddy Simulation,Arctic stratus,cloud optical thickness
更新于2025-09-23 15:23:52