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Simulation study to find suitable dopants of CdS buffer layer for CZTS solar cell
摘要： The performance of CZTS solar cell, a promising candidate in the field of energy production from sunlight, can be improved by optimizing the parameters of most widely used CdS buffer layer. In this work, numerical study have been done on the typical CZTS solar cell structures containing Mo thin film as back contact on glass substrate using SCAPS-1D solar cell simulation software. Then, the CZTS has been used as the absorber layer followed by CdS buffer later. Following, ZnO and transparent conducting oxide n-ITO layers have been considered as window layer and front contact, respectively. In the simulations, the CdS buffer layer has been doped with three different materials such as Silver (Ag), Copper (Cu) and Chlorine (Cl) for a wide acceptable range of carrier concentration. After obtaining the suitable carrier concentration, the thickness of the doped buffer layer has been varied keeping other layer parameters constant to see the variation of performance parameters open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF) and efficiency (η) of the CZTS solar cell.
关键词： SCAPS-1D,Solar cell,CZTS,Doped CdS,Carrier concentration
更新于2025-09-12 10:27:22
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Optimization, kinetics and thermodynamics of photocatalytic degradation of Acid Red 1 by Sm-doped CdS under visible light
摘要： Sm-doped CdS nanoparticles were synthesized through an ultrasound-assisted co-precipitation method and their photocatalytic efficiency was investigated by applying them to photodegradation of Acid Red 1 (AR1) under visible light. The effect of the operational factors on the photocatalytic process was systematically evaluated using response surface methodology. Under the optimal conditions ([AR1]0= 15 mg L-1, [2% Sm-CdS]0= 1 g L-1, pH= 4 and t= 94 min), more than 83% of the AR1 molecules were degraded. The kinetics of the process was well described by the Langmuir-Hinshelwood’s pseudo-first-order model (kapp= 0.0163 min-1). Furthermore, thermodynamics of the process was demonstrated by the activated complex theory of Eyring, which declared that the photocatalytic process is endothermic and nonspontaneous in the temperature range of 25–45°C. In addition, the main products and intermediates of AR1 degradation were determined by the GC-MS technique.
关键词： Sm-doped CdS,Thermodynamics,Visible light photocatalysis,Kinetics,Acid Red 1,RSM
更新于2025-09-09 09:28:46
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Effect of Aluminium doping on photoluminescence and third-order nonlinear optical properties of nanostructured CdS thin films for photonic device applications
摘要： The work presented here reports the influence of Aluminium (Al) doping on CdS thin films for the structural, morphological, optical and third-order nonlinear optical (NLO) properties. Thin films of Pure CdS and Al-doped CdS (Cd1-xAlxS) with x= 0, 0.01, 0.05 and 0.1 are prepared on the glass substrate at 350oC using the spray pyrolysis technique. The observed X-Ray Diffraction (XRD) patterns of CdS films are found to a polycrystalline hexagonal structure and are not much affected by Al doping. Also the films have been examined by Field Emission Scanning Electron Microscopy (FESEM) images. The transmittance of the CdS films is observed to be 50 to 60% in the visible region and that decreased at higher doping concentrations and with higher Al doping the direct optical band gap is decreased from 2.52 to 2.38 eV. To understand the defect states characteristics, the corresponding room-temperaturephotoluminescence (RTPL) spectra have also been taken and found the nonlinear behavior in a band to band-edge emission in the prepared samples upon Al incorporation. The sign and the magnitude of the third-order NLO properties were determined using the Z-scan technique with a continuous wave laser as the excitation source. It is observed that the material exhibit strong two-photon absorption (2PA) with the nonlinear absorption (NLA) coefficient (β) in the range of 10-4 cmW-1 and nonlinear refractive index (NRI) n2 ~10-9 cm2W-1. The third-order NLO susceptibility has found to be enhanced from 3.12 x10-5 esu to 6.36 x10-5 esu upon Al incorporation. Optical limiting characteristics of the prepared films are studied at the experimental wavelength. The results suggest that the Cd1-xAlxS is a promising material for nonlinear optical devices at 532 nm and optical power limiting applications.
关键词： photoluminescence,spray pyrolysis,Al-doped CdS thin films,Z-scan,structural,nonlinear optical properties
更新于2025-09-09 09:28:46
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Synthesis of Al-doped CdS/Si nanoheterojunction arrays and their electrical and electroluminescence properties
摘要： The Al-doped CdS/Si nanoheterostructures were prepared by growing Al-doped CdS films on silicon nanoporous pillar array (Si-NPA) through chemical bath deposition (CBD). Their structure, electrical, and electroluminescence properties were investigated as a function of [Al]/[Cd]. At low [Al]/[Cd], Al ions tend to enter the lattice substitutionally, decreasing the lattice constants, micro-strain along (0 0 2) plane, and resistivity, and enhancing average crystallite size and carrier mobility. However, this behavior is reversed at high [Al]/[Cd], because Al ions tend to enter the lattice interstitially. The electroluminescence (EL) properties were most affected by Al doping. As Al concentration increases, the EL intensity initially increased rapidly to a maximum with [Al]/[Cd] and then decreased with further increased [Al]/[Cd]. The maximum of EL intensity was observed in sample S-0.07. Its EL intensity is 320 times that of S-0 and its applied voltages are very low. It could be observed by the naked eyes even at 3 V. These results indicated that Al-doped CdS/Si-NPA might be a great potential in constructing optoelectronic nanodevices. The measured results show the incorporation of suitable amount of Al would improve significantly the performances of CdS/Si-NPA heterojunctions, increasing the uniformity of CdS thin film, decreasing the resistivity, enhancing carrier mobility, improving obviously the rectification behavior, and increasing greatly the EL emission intensity. These results indicated that Al-doped CdS/Si-NPA might be a great potential in constructing optoelectronic nanodevices.
关键词： optoelectronic nanodevices,electrical properties,chemical bath deposition,electroluminescence properties,Al-doped CdS/Si nanoheterostructures
更新于2025-09-09 09:28:46