- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Efficient planar heterojunction perovskite solar cells with enhanced FTO/SnO2 interface electronic coupling
摘要： Ultrathin and compact SnOx amorphous layers derived from SnCl4 were introduced at the interface of electron transport layer (ETL)/perovskite or FTO/ETL to enhance the electron coupling between layers, passivate the trapping defects and optimize the energy level alignment. As results of the increased interface electron collection and reduced interface recombination, the planer perovskite solar cell (PSC) with SnO2 nanocrystal (NC) ETL pre-treated by SnCl4 (Cl-SnO2) shows the power conversion efficiency (PCE) enhancement from 16.3% to 18.6%, and the device hysteresis has also been significantly restrained. In comparison, the planer PSCs with traditional SnCl4 (SnO2-Cl) post-treated SnO2 NC ETL makes the PCE increased from 16.3% to 17.3%. These results indicate that both two kinds of treated ways could improve the performance of the PSCs but compared with the post-treatment process, the devices based on Cl-SnO2 pre-treated ETL present superior performance, which is attributed to the closer contact and enhanced electron coupling between FTO and SnO2 NC ETL with Cl-SnO2 in between.
关键词： SnCl4 pre-treatment,Perovskite solar cells,Surface modification
更新于2025-09-23 15:19:57
-
Thermal atomic layer deposition of Sn metal using SnCl <sub/>4</sub> and a vapor phase silyl dihydropyrazine reducing agent
摘要： This work explores a novel, thermal atomic layer deposition (ALD) process to deposit tin metal at a low temperature. The authors employ 1,4-bis(trimethylsilyl)-1,4-dihydropyrazine (DHP) to reduce SnCl4 on silicon substrates. The authors explored a range of temperatures between 130 and 210 °C to determine the ALD window, which was found to be 170–210 °C. The authors show that this process yields a growth rate of ～0.3 ? per cycle at 190 °C. Furthermore, X-ray photoelectron spectroscopy results showed that the ?lm impurities are reduced for depositions within the ALD window. The reaction mechanism was explored using in situ mass spectrometry and in situ quartz crystal microbalance (QCM). Within the ALD temperature window, the QCM results showed a saturated mass gain during the SnCl4 exposure and a net mass loss during the DHP dose. Consistent with the QCM results, in situ mass spectroscopy data indicate that the DHP exposure step removes surface Cl via formation of volatile trimethylsilyl chloride and pyrazine by-products, effectively reducing the oxidation state of surface-bound Sn. This work is the ?rst thermal Sn metal ALD process to be reported in literature and the oxidation/reduction chemistry presented here may be applied to other metal precursors, increasing the applicability of metal ALD use in industry.
关键词： quartz crystal microbalance,X-ray photoelectron spectroscopy,ALD window,SnCl4,mass spectrometry,tin metal,thermal atomic layer deposition,DHP
更新于2025-09-04 15:30:14