Synthesis and annealing process of ultra-large SnS nanosheets for FTO/SnS/CdS/Pt photocathode

摘要： SnS has been widely used in photoelectric devices due to its special band gap of 1.2–1.5 eV. Here, we reported on the fabrication of SnS nanosheets and the effect of synthesis condition together with heat treatment on its physical properties. The obtained band gap of the SnS nanosheets is in the rage of 1.37–1.41 eV. It was found that the photo-current density of a thin film comprised of SnS nanosheets could be enhanced significantly by annealing treatment. The maximum photo-current density of the stack structure of FTO/SnS/CdS/Pt was high as 389.5 μA cm-2, rendering its potential application in high efficiency solar hydrogen production.