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Screen printed tin selenide films used as the counter electrodes in dye sensitized solar cells
摘要： In this work, the scalable screen printing process has been adopted to prepare low-cost and earth-abundant tin selenide (SnSe) films to study as the counter electrode in dye-sensitized solar cells (DSSCs). The SnSe powder was synthesized by solid state reaction method and corresponding films were fabricated by screen printing technique. The electrocatalytic activity of SnSe for redox iodide/triiodide (I?/I3?) couple and charge transfer resistance at the CE/electrolyte interface were characterized by cyclic voltammetry and electrochemical impedance spectroscopy. The DSSC with SnSe counter electrode exhibited with power conversion efficiency (PCE) of ~5.76% with open-circuit voltage of 0.63 V and short circuit current density of 12.39 mA/cm2 whereas the DSSC with platinum counter electrode showed PCE of 8.09% with open-circuit voltage of 0.68 V and short circuit current density of 14.77 mA/cm2. Thus, earth abundant and low cost SnSe films fabricated by screen printing technique could be an alternative to costly platinum counter electrode in DSSC.
关键词： Counter electrode,SnSe films,DSSC,Chalcogenides,Screen printing
更新于2025-09-16 10:30:52
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Dual Modes Electronic Synapse Based on Layered SnSe Films Fabricated by Pulsed Laser Deposition
摘要： Artificial synapse, such as memristive electronic synapse, caught world-wide attention, attributed to its potential in neuromorphic computing which may tremendously reduce the computer volume and energy consumption. Introducing of layered two-dimentional materials has been reported enhance performance of the memristive electronic synapse. However, it is still a challenge to fabricate large-area layered two-dimentioanl films by scalable methods, which has greatly limit the industrial application potential of two-dimentioanl materials. In this work, a scalable pulsed laser deposition (PLD) method has been ultilized to fabricate large-area layered SnSe films, which is used as the functional layer of memristive electronic synapse with dual modes. Both long-term memristive behaviour with gradually changed resistance (Mode 1) and short-term memristive behavior with abruptly reduced resistance (Mode 2) have been ahieved in this SnSe based memristive electronic synapse . The switching between Mode 1 and Mode 2 can be realized by series of voltage sweeping and programed pulses. Formation and recovery of Sn vacancies were believed to induce the short-term memristive behaviour, and the joint action of Ag filament formation/rupture and Schottky barrier modulation should be the origin of long-term memristive behaviour. DFT calculation was performed to further illustrate how Ag atoms and Sn vacancies diffuse through SnSe layer and form filaments. The successful emulation of synaptic functions by layered chalcogenides memristor fabricated by PLD method suggestes the application potential in future neuromorphic computers.
关键词： neuromorphic computing,layered two-dimentional materials,pulsed laser deposition,SnSe films,memristive electronic synapse,Artificial synapse,dual modes
更新于2025-09-16 10:30:52
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Effect of indium and antimony doping on the transport properties of direct vapour transport (DVT) grown SnSe single crystals
摘要： Pure SnSe, 5% In, 10% In, 5% Sb, and 10% Sb doped SnSe single crystals were grown by the direct vapour transport technique. The energy dispersive X-ray analysis study of the samples showed them to be near stoichiometric but slightly Sn deficient. The X-ray diffraction study of all the as-grown single crystal samples showed that they possess an orthorhombic structure and the lattice parameters are in good agreement with the reported parameters. The thermoelectric power (S), dc electrical conductivity (σ), and thermal conductivity (κ) variation with temperature from ambient to 573 K substantiated the semiconducting nature of all the five samples. The sign of “S” was positive for all five samples for all the temperature range stating the sample to be a p-type semiconductor. The power factor (S2σ) and figure of merit (ZT) variation with temperature showed that pure SnSe possesses the highest value compared to doped samples. The obtained results are studied and discussed in detail.
关键词： direct vapour transport,thermoelectric,SnSe,doping,single crystals
更新于2025-09-09 09:28:46
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SnSe/SiO2/Si Heterostructures for Ultrahigh-Sensitivity, Ultrafast and Broadband Optical Position Sensitive Detectors
摘要： In this letter, optical position sensitive detectors (PSDs) based on SnSe/SiO2/Si heterostructures with an atomically abrupt interface are fabricated via the van der Waals (vdWs) growth of the large-area multilayered SnSe nanosheets on SiO2-buffered Si. The as-fabricated SnSe/SiO2/Si PSD device has a broadband photoresponse from visable to near-infrared light, especially showing an extremely high sensitivity up to 687.5 mV/mm under a relatively low laser power of 1.0 mW and short response/relaxation time of ~0.9/17.3 μs. The unique characteristics from the SnSe/Si vdWs interface are proposed to be the key factors to contribute to the excellent performance of the fabricated PSDs.
关键词： Si,SnSe,heterostructure,Position sensitive detectors,van der Waals growth
更新于2025-09-09 09:28:46