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Influence of Local Heterojunction on the Thermoelectric Properties of Mo-SnSe Multilayer Films Deposited by Magnetron Sputtering
摘要： Mo-SnSe multilayer films were deposited by multi-step magnetron sputtering. The Mo-SnSe multilayer films are then annealed, and the new phases including SnSe2 and MoSe2 are observed by x-ray diffraction and Raman spectroscopy. Scanning electron microscopy reveals that the SnSe exhibits the columnar grain structure with sizes from 50–100 nm. The high-resolution transmission electron microscopy shows the SnSe2 is dispersed at the boundary of the columnar grain and the local MoSe2/SnSe heterojunction is formed in the interior of the columnar grain. The influence of Mo content on the thermoelectric properties of SnSe thin films was investigated. A maximum power factor of 0.44 μW cm?1 K?2 was obtained for a 2.6 at.% Mo-doped SnSe thin film at 576 K, which is higher than that of a SnSe thin film deposited under the same conditions.
关键词： thermoelectric properties,heterojunction,SnSe films,sputtering
更新于2025-09-23 15:22:29
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Screen printed tin selenide films used as the counter electrodes in dye sensitized solar cells
摘要： In this work, the scalable screen printing process has been adopted to prepare low-cost and earth-abundant tin selenide (SnSe) films to study as the counter electrode in dye-sensitized solar cells (DSSCs). The SnSe powder was synthesized by solid state reaction method and corresponding films were fabricated by screen printing technique. The electrocatalytic activity of SnSe for redox iodide/triiodide (I?/I3?) couple and charge transfer resistance at the CE/electrolyte interface were characterized by cyclic voltammetry and electrochemical impedance spectroscopy. The DSSC with SnSe counter electrode exhibited with power conversion efficiency (PCE) of ~5.76% with open-circuit voltage of 0.63 V and short circuit current density of 12.39 mA/cm2 whereas the DSSC with platinum counter electrode showed PCE of 8.09% with open-circuit voltage of 0.68 V and short circuit current density of 14.77 mA/cm2. Thus, earth abundant and low cost SnSe films fabricated by screen printing technique could be an alternative to costly platinum counter electrode in DSSC.
关键词： Counter electrode,SnSe films,DSSC,Chalcogenides,Screen printing
更新于2025-09-16 10:30:52
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Dual Modes Electronic Synapse Based on Layered SnSe Films Fabricated by Pulsed Laser Deposition
摘要： Artificial synapse, such as memristive electronic synapse, caught world-wide attention, attributed to its potential in neuromorphic computing which may tremendously reduce the computer volume and energy consumption. Introducing of layered two-dimentional materials has been reported enhance performance of the memristive electronic synapse. However, it is still a challenge to fabricate large-area layered two-dimentioanl films by scalable methods, which has greatly limit the industrial application potential of two-dimentioanl materials. In this work, a scalable pulsed laser deposition (PLD) method has been ultilized to fabricate large-area layered SnSe films, which is used as the functional layer of memristive electronic synapse with dual modes. Both long-term memristive behaviour with gradually changed resistance (Mode 1) and short-term memristive behavior with abruptly reduced resistance (Mode 2) have been ahieved in this SnSe based memristive electronic synapse . The switching between Mode 1 and Mode 2 can be realized by series of voltage sweeping and programed pulses. Formation and recovery of Sn vacancies were believed to induce the short-term memristive behaviour, and the joint action of Ag filament formation/rupture and Schottky barrier modulation should be the origin of long-term memristive behaviour. DFT calculation was performed to further illustrate how Ag atoms and Sn vacancies diffuse through SnSe layer and form filaments. The successful emulation of synaptic functions by layered chalcogenides memristor fabricated by PLD method suggestes the application potential in future neuromorphic computers.
关键词： neuromorphic computing,layered two-dimentional materials,pulsed laser deposition,SnSe films,memristive electronic synapse,Artificial synapse,dual modes
更新于2025-09-16 10:30:52