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Proton Radiation Hardness of Perovskite Tandem Photovoltaics
摘要： We propose and test monolithic perovskite/CIGS tandem solar cells for readily stowable, ultra-lightweight space photovoltaics. We design operando and ex situ measurements to show that perovskite/CIGS tandem solar cells retain over 85% of their initial power-conversion efficiency after high-energy proton irradiation. While the perovskite sub-cell is unaffected after this bombardment, we identify increased non-radiative recombination in the CIGS bottom cell and nickel-oxide-based recombination layer. By contrast, monolithic perovskite/silicon-heterojunction cells degrade to 1% of their initial efficiency due to radiation-induced defects in silicon.
关键词： Perovskite/SHJ,Proton Radiation Hardness,Space Photovoltaics,Perovskite Tandem Photovoltaics,Perovskite/CIGS
更新于2025-09-23 15:21:01
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Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics
摘要： We report on the effect of electron and proton irradiation on effective minority carrier lifetimes (τeff) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay (μW-PCD) method. We examine the dependence of τeff on the p-type doping level and on electron and proton radiation fluences at 1 MeV. The measured τeff before and after irradiation are used to estimate the minority carriers’ diffusion lengths, which is an important parameter for solar cell operation. We observe τeff ranging from ~50 to 230 μs for Ge doping levels between 1 × 1017 and 1 × 1016 at.cm-3, corresponding to diffusion lengths of ~500–1400 μm. A separation of τeff in Ge bulk lifetime and surface recombination velocity is conducted by irradiating Ge lifetime samples of different thicknesses. The possible radiation-induced defects are discussed on the basis of literature.
关键词： Space photovoltaics,Minority carrier lifetime,Germanium,Surface passivation,Irradiation
更新于2025-09-23 15:19:57