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Efficiency and spectral performance of narrowband organic and perovskite photodetectors: a cross-sectional review
摘要： The capability of detecting visible and near infrared light within a narrow wavelength range is in high demand for numerous emerging application areas, including wearable electronics, the Internet of Things, computer vision, artificial vision and biosensing. Organic and perovskite semiconductors possess a set of properties that make them particularly suitable for narrowband photodetection. This has led to rising interest in their use towards such functionality, and has driven remarkable progress in recent years. Through a comparative analysis across an extensive body of literature, this review provides an up-to-date assessment of this rapidly growing research area. The transversal approach adopted here focuses on the identification of: (a) the unifying aspects underlying organic and perovskite narrowband photodetection in the visible and in the near infrared range; and (b) the trends relevant to photoconversion efficiency and spectral width in relation to material, device and processing strategies. A cross-sectional view of organic and perovskite narrowband photodetection is thus delineated, giving fresh insight into the status and prospects of this research area.
关键词： narrowband organic photodetectors,narrowband perovskite photodetectors,NIR photodetectors,colour sensors,spectral selectivity
更新于2025-09-23 15:19:57
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Self-Powered Filterless Narrow-Band pa??n Heterojunction Photodetector for Low Background Limited Near-Infrared Image Sensor Application
摘要： Photonic detection with narrow spectrum selectivity is very important to eliminate the signal from obtrusive light, which can improve the anti-interference ability of the infrared imaging system. While self-driving effect inherent to p-n junction is very attractive in optic-electronic integration, the application of p-n junction in narrow-band photodetector is limited by the usual broad absorption range. In this work, a self-powered filterless narrowband near-infrared photodetector based on CuGaTe2/silicon p-n junction was reported. The as-fabricated photodetector exhibited typical narrow-band response which shall be ascribed to the slightly smaller bandgap of Si than CuGaTe2 and the restricted photocurrent generation region in the p-n heterojunction by optimizing CuGaTe2 thickness. It is observed that when the thickness of CuGaTe2 film is 143 nm, the device exhibits a response peak centered around 1050 nm with a full-width at half-maximum of ~118 nm. Further device analysis reveals a specific detectivity of ~1012 Jones and a responsivity of 114 mA/W under 1064 nm illumination at zero bias. It was also found that image system based on the narrowband CuGaTe2/Si photodetector showed high noise immunity for its spectral selective characteristics.
关键词： p-n heterojunction,near infrared light,image sensing,spectral selectivity,narrow band photodetector
更新于2025-09-23 15:19:57
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[IEEE 2018 4th IEEE International Conference on Emerging Electronics (ICEE) - Bengaluru, India (2018.12.17-2018.12.19)] 2018 4th IEEE International Conference on Emerging Electronics (ICEE) - Improvement in Self-Powered GaN-based Symmetric Metal-Semiconductor-Metal Ultraviolet Photodetectors by Using Phenol-Functionalized Porphyrin Organic Molecules
摘要： Organic molecular monolayers have been used for improving the performance of various electronic device structures. In this work, the concept of organic molecular surface modification is applied for improving the performance and the self-power quality of GaN-based symmetric Metal-Semiconductor-Metal (MSM) Ultraviolet (UV) Photodetectors (PDs). Organic molecules of phenol-functionalized-metallated-Porphyrin (Zn-TPPOH) have been adsorbed on GaN epitaxial layers and Ni/Zn-TPPOH/GaN/Zn-TPPOH/Ni PD structures have been fabricated. This process has led to decrease in reverse bias dark current by ~ 10,000 times at 0V in comparison to the dark current values obtained for Ni/GaN/Ni MSM PDs. Photodetector parameters such as Photo-to-dark current ratio and Responsivity have increased from 8.8 and 0.004 A/W for Ni/GaN/Ni structures to 2.4×105 and 0.038 A/W for Ni/Zn-TPPOH/GaN/Zn-TPPOH/Ni structures, respectively at 0V. The spectral selectivity of the PDs has also improved at 0V, which means that the molecularly modified devices have become more responsive in UV spectral region and lesser in visible spectral region, if compared to bare-GaN based devices.
关键词： PDCR,Responsivity,Spectral selectivity
更新于2025-09-16 10:30:52