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[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Effect of DC Electric Field on the Emitted THz Signal of Antenna-Coupled Spintronic Emitters
摘要： We study the impact of an external electric DC field on antenna-coupled spintronic THz emitters driven by a 90 fs, 1550 nm laser oscillator. Simultaneous application of external electric and magnetic field shows a quadratic decrease in peak-peak THz pulse with increase in the bias voltage. We ascribe this decrease to Joule heating caused by the DC current flowing through the spintronic material.
关键词： spintronic emitters,Joule heating,DC electric field,THz
更新于2025-09-12 10:27:22
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Rashba splitting in bilayer transition metal dichalcogenides controlled by electronic ferroelectricity
摘要： Based on ?rst-principles calculations and k · p model analyses, we uncover the coexistence and coupling of Rashba spin splitting with electronic ferroelectricity in bilayer transition metal dichalcogenides MX2 (M = Mo,W; X = S,Se,Te) with certain stacking con?gurations. The reversible spontaneous ferroelectric polarization, along the out-of-plane direction (the preferred direction for applications), totally arises from the interlayer charge transfer, rather than being governed by the ionic displacement as found in conventional ferroelectrics. The spin texture related to the Rashba spin splitting can be reversed upon inversion of the ferroelectric polarization. In particular, by applying a small in-plane compressive strain, the magnitude of Rashba band splitting can be tuned to be as large as 100 meV. These results would open up possibilities for exploring two-dimensional multiferroic physics and developing electrically controlled nanoscale spintronic devices.
关键词： Rashba splitting,bilayer transition metal dichalcogenides,spintronic devices,electronic ferroelectricity
更新于2025-09-11 14:15:04
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Laser‐Driven Strong‐Field Terahertz Sources
摘要： A review on the recent development of intense laser-driven terahertz (THz) sources is provided here. The technologies discussed include various types of sources based on optical rectification (OR), spintronic emitters, and laser-filament-induced plasma. The emphasis is on OR using pump pulses with tilted intensity front. Illustrative examples of newly emerging applications are briefly discussed, in particular strong-field THz control of materials and acceleration and manipulation of charged particles.
关键词： plasma-based terahertz sources,optical rectification,spintronic emitters,terahertz pulses,strong-field terahertz–matter interactions
更新于2025-09-11 14:15:04
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Large spin-orbit splitting in inversion layers on HgCdTe with an inverted band structure
摘要： This paper reports the study of the magneto-transport properties of a two-dimensional electron gas confined in inversion layers on HgCdTe with an inverted band structure. The magnetoresistance exhibits Shubnikov-de Hass oscillations, where beating patterns are observed at low magnetic field. This can be attributed to the zero-field spin splitting. By using the fast Fourier transformation of the observed beating patterns, the zero-field spin splitting energy is extracted. The extracted energy up to ～ 34 meV is obtained, which is far larger than that in inversion layers on HgCdTe with a normal band structure. This offers a route to realize a HgTe-based spintronic device that works at room temperature.
关键词： spin-orbit splitting,spintronic device,inversion layers,HgCdTe
更新于2025-09-09 09:28:46
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High-performance spin rectification in gallium nitride-based molecular junctions with asymmetric edge passivation
摘要： The spin transport properties of molecular devices constructed from zigzag gallium nitride nanoribbons (ZGaNNRs) are investigated by applying the non-equilibrium Green’s function formalism in combination with density functional theory. The computational results indicate that ZGaNNR systems show spin rectification with a high efficiency, approaching nearly 109, giant magnetoresistance with a ratio up to 108, perfect spin-filtering, and negative differential resistance effects. Importantly, our results reveal that intrinsic rectification can be observed regardless of their width. The microscopic origins of the rectification are revealed and discussed in terms of a spin-resolved transmission spectrum, the band structures of the ZGaNNRs, and the molecular projected self-consistent Hamiltonian. Our findings could be useful for designing GaN-based spintronic nanodevices.
关键词： spin transport,molecular junctions,asymmetric edge passivation,gallium nitride,spintronic devices
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE Conference on Antenna Measurements & Applications (CAMA) - V?ster?s, Sweden (2018.9.3-2018.9.6)] 2018 IEEE Conference on Antenna Measurements & Applications (CAMA) - Toward Standard Near-Field Measurement Solutions for Stochastic Electromagnetic Fields
摘要： This paper investigates directions towards standardization of Near-Field measurement solutions for stochastic electromagnetic fields. An overview of Single-Probe, Dual-probe and Multi-Probe Array based measurements for deterministic fields is given and their capabilities and performances including test-time for industrial deployment are discussed. Importance of Field-Field correlation based analysis is underlined both from an experimental and modeling stand points and finally for combination of measurements and full-wave EM modeling.
关键词： Correlation,Field-Field Correlation,Stochastic Electromagnetic Field,Spintronic,Near Field imaging
更新于2025-09-09 09:28:46
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Current‐Enhanced Broadband THz Emission from Spintronic Devices
摘要： An ultra-broadband terahertz (THz) emitter covering a wide range of frequencies from 0.1 to 10 THz is highly desired for spectroscopy applications. So far, spintronic THz emitters have been proven as one class of efficient THz sources with a broadband spectrum while the performance in the lower THz frequency range (0.1–0.5 THz) limits its applications. In this work, a novel concept of a current-enhanced broad spectrum from spintronic THz emitters combined with semiconductor materials is demonstrated. A 2–3 order enhancement of the THz signals in a lower THz frequency range (0.1–0.5 THz) is observed, in addition to a comparable performance at higher frequencies from this hybrid emitter. With a bias current, there is a photoconduction contribution from semiconductor materials, which can be constructively interfered with the THz signals generated from the magnetic heterostructures driven by the inverse spin Hall effect (ISHE). These findings push forward the utilization of metallic heterostructure-based THz emitters on the ultra-broadband THz emission spectroscopy.
关键词： spintronic devices,broadband spectrum,photoconduction,terahertz emitters
更新于2025-09-04 15:30:14