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Development of indium tin oxide stack layer using oxygen and argon gas mixture for crystalline silicon heterojunction solar cells
摘要： Indium tin oxide (ITO) films were used as transparent conductive oxide (TCO) layers in crystalline silicon heterojunction (c-Si-HJ) solar cells. An ITO film was deposited by radio frequency (RF) magnetron sputtering with the oxygen-argon (O2–Ar) gas mixture. The increasing of the O2/Ar ratio in ITO film deposition resulted in the improvement of transmittance and short circuit current density (Jsc) of c-Si-HJ solar cells, while film electrical property, fill factor (FF) and efficiency (η) of the solar cell were decreased. The enhancement of the Jsc and FF caused by the ITO stack layer on the efficiency of the c-Si-HJ solar cell was investigated. The c-Si-HJ solar cells using an ITO stack layer have a high photovoltaic (PV) parameter compared to conventional ITO (Ar gas) and ITO (O2–Ar gas mixture) layer. By using an ITO stack layer for a c-Si-HJ solar cell, the efficiency achieved was as high as 18.4%. (Voc ? 702 mV, Jsc ? 34.8 mA/cm2, FF ? 0.75).
关键词： O2–Ar gas mixture,ITO stack layer,solar cell,Crystalline silicon heterojunction (c-Si-HJ),Indium tin oxide
更新于2025-09-19 17:13:59
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Modified Stack Layer for a Two-Step Process for High Efficiency CZTSe Solar Cell
摘要： For kesterite Cu2ZnSnSe4 (CZTSe) solar cells, the CZTSe absorber is usually fabricated using a two-step process, in which the CZTSe absorber is made by using post-selenization of a sputtered metal stack ?lm. In the post-selenized CZTSe ?lm, a rough surface, voids, and small-grained structures at bottom near the Mo back contact are frequently observed. To avoid these inferior features, we designed and fabricated a new modi?ed stack layer that showed compact and larger grains with no voids and with small-grain-free near the bottom side. Several measurements, such as X-ray di?raction, Raman spectroscopy, photoluminescence, and time-resolved photoluminescence measurements, showed that the selenized ?lm from the newly designed stack layer had high crystal quality. With the fabricated absorber, we made two types of CZTSe solar cells, one with a CdS bu?er and the other with a (Zn,Sn)O bu?er. The (Zn,Sn)O- bu?ered CZTSe solar cell showed a power conversion e?ciency of 8.31%, which is comparable to the 8.84% of the CdS-bu?ered CZTSe solar cell. Our results indicates that the CZTSe solar cells made by using our newly designed stack layer and a (Zn,Sn)O bu?er are promising for high-e?ciency Cd-free CZTSe solar cells.
关键词： Film growth,Stack layer,CZTSe,Solar cell
更新于2025-09-12 10:27:22