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Substrate Integrated Waveguide Multi-Channel Filtering Crossover With Extended Channel Number and Controllable Frequencies
摘要： In this brief, substrate integrated waveguide (SIW) multi-channel filtering crossovers are proposed for two sets of intersecting signals operating at the same or different frequencies. The number of filtering channels in two directions can be independently extended. Square SIW cavities with TE102 and TE201 modes are used as building blocks. By properly arranging feeding ports and coupling regions, isolation between different channels is achieved and bandpass responses are integrated. The design procedure can be simplified as that of single-channel bandpass filter. For demonstration, a six- and a five-channel filtering crossovers with the same operating frequency in two directions are designed and fabricated. By etching a slot on the square SIW cavity, the TE102 and TE201 modes are split and thus the frequencies can be controlled. A four-channel filtering crossover with different operating frequencies in two directions is implemented for further verification. Compared to other multi-channel crossovers, the proposed designs feature good inter-channel isolation and intra-channel filtering responses with flexibly extended channel number and controllable frequencies.
关键词： Multi-channel,controllable frequencies,crossover,substrate integrated waveguide (SIW),bandpass responses
更新于2025-09-19 17:13:59
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COMPACT SINGLE-LAYER BALANCED EIGHTH-MODE SUBSTRATE INTEGRATED WAVEGUIDE BANDPASS FILTER WITH HIGH SELECTIVITY
摘要： This letter proposes a compact single-layer balanced bandpass ?lter (BPF), which is realized by a new arrangement of eighth-mode substrate integrated waveguide (EMSIW) cavities. Under di?erential-mode (DM) operation, the half bisection topology of the proposed EMSIW ?lter can be equivalent to a quadruplet scheme based on four coupled EMSIW cavities. The negative cross coupling can be easily realized by the nature of the fringe electric ?elds of opened ends of EMSIW cavities. For the demonstration, a balanced EMSIW ?lter with the operating frequency at 2.4 GHz is designed, fabricated, and measured.
关键词： eighth-mode substrate integrated waveguide,compact size,high selectivity,balanced bandpass filter
更新于2025-09-19 17:13:59
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Preparation of Plasmonic Au-TiO2 Thin Films on a Transparent Polymer Substrate
摘要： In this work, plasmonic thin films composed of Au nanoparticles embedded in a TiO2 matrix were prepared in a transparent polymer substrate of poly(dimethylsiloxane) (PDMS). The thin films were deposited by reactive DC magnetron sputtering, and then subjected to heat treatment up to 150 °C in order to promote the growth of the Au nanoparticles throughout the TiO2 matrix. The transmittance spectrum of the thin films was monitored in situ during the heat treatment, and the minimum time required to have a defined localized surface plasmon resonance (LSPR) band was about 10 min. The average size of Au nanoparticles was estimated to be about 21 nm—the majority of them are sized in the range 10‐40 nm, but also extend to larger sizes, with irregular shapes. The refractive index sensitivity of the films was estimated by using two test fluids (H2O and DMSO), and the average value reached in the assays was 37.3 ± 1.5 nm/RIU, resulting from an average shift of 5.4 ± 0.2 nm. The results show that it is possible to produce sensitive plasmonic Au‐TiO2 thin films in transparent polymer substrates such as PDMS, the base material to develop microfluidic channels to be incorporated in LSPR sensing systems.
关键词： localized surface plasmon resonance,gold nanoparticles,thin films,poly(dimethylsiloxane) substrate,reactive magnetron sputtering,titanium dioxide
更新于2025-09-19 17:13:59
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Single-to-Balanced and Balanced-to-Balanced Dual-channel Filters Using Multilayer Substrate Integrated Waveguide Cavities
摘要： This paper presents a scheme for designing single-to-balanced and balanced-to-balanced dual-channel filters using multilayer substrate integrated waveguide (SIW) cavities. By sharing the common SIW cavities, two single-to-balanced or two balanced-to-balanced filters are flexibly integrated as one dual-channel circuit, resulting in very high integration. The input and output ports are properly arranged to the SIW cavities, where the two modes of the TM110 degenerate modes can be separately excited by the ports of the two filter channels. Moreover, the resonance modes of one channel have no coupling to those of the other channel. Thus, isolation between the two channels is achieved even though the two channels are designed sharing the same SIW cavities. The desired balanced ports are achieved based on the inherent out-of-phase electric field property of the SIW cavity at TM110 degenerate modes. For verification, a six-port single-to-balanced dual-channel filter is implemented, exhibiting excellent single-to-balanced filtering responses of each channel and high isolation between the two channels. By converting the single-ended ports to balanced ports, second-order and third-order balanced-to-balanced dual-channel filters are proposed. Moreover, the proposed designs can also realize different channel bandwidth or channel frequencies to meet different wireless applications.
关键词： dual-channel filter,multiple-input and multiple-output (MIMO),high integration,Single-to-balanced,balanced-to-balanced,substrate integrated waveguide (SIW)
更新于2025-09-19 17:13:59
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[IEEE 2018 11th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT) - HangZhou, China (2018.9.5-2018.9.7)] 2018 11th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT) - Investigation of Ultra-wideband Ridged Half-Mode Substrate-Integrated Waveguide Coupler
摘要： In this paper, a novel ultra wideband (UWB) 3-dB coupler at X and Ku band based on ridged half-mode substrate integrated waveguide (RHMSIW) and embedded the shape of metal groove is designed, fabricated, and measured, which is widely used in microwave and millimeter wave circuits. The structural parameters of new UWB RHMSIW 3-dB coupler with three cascading metal groove cells are analyzed. The structure is simulated with a relative bandwidth of 48% at the center frequency of 15 GHz. The measured results show that the proposed RHMSIW coupler keeps good performance of the HMSIW coupler. Simulated results are in agreement with the measured results. The results show that the novel UWB RHMSIW 3-dB coupler can provide better performance and have a smaller size compared with reported couplers, which illustrates its application in the wideband millimeter wave systems.
关键词： metal groove,ultra wideband,coupler,Ridged half-mode substrate integrated waveguide (RHMSIW)
更新于2025-09-19 17:13:59
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High-Gain Metasurface in Polyimide On-Chip Antenna Based on CRLH-TL for Sub-Terahertz Integrated Circuits
摘要： this paper presents a novel on-chip antenna using standard cMoS-technology based on metasurface implemented on two-layers polyimide substrates with a thickness of 500 μm. the aluminium ground-plane with thickness of 3 μm is sandwiched between the two-layers. concentric dielectric-rings are etched in the ground-plane under the radiation patches implemented on the top-layer. the radiation patches comprise concentric metal-rings that are arranged in a 3 × 3 matrix. The antennas are excited by coupling electromagnetic energy through the gaps of the concentric dielectric-rings in the ground-plane using a microstrip feedline created on the bottom polyimide-layer. the open-ended feedline is split in three-branches that are aligned under the radiation elements to couple the maximum energy. in this structure, the concentric metal-rings essentially act as series left-handed capacitances CL that extend the effective aperture area of the antenna without affecting its dimensions, and the concentric dielectric rings etched in the ground-plane act as shunt left-handed inductors LL, which suppress the surface-waves and reduce the substrates losses that leads to improved bandwidth and radiation properties. The overall structure behaves like a metasurface that is shown to exhibit a very large bandwidth of 0.350–0.385 THz with an average radiation gain and efficiency of 8.15dBi and 65.71%, respectively. It has dimensions of 6 × 6 × 1 mm3 that makes it suitable for on-chip implementation.
关键词： metasurface,integrated circuits,on-chip antenna,polyimide substrate,sub-terahertz
更新于2025-09-19 17:13:59
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Effect of Si substrate modification on improving the crystalline quality, optical and electrical properties of thermally-evaporated BaSi2 thin-films for solar cell applications
摘要： We have grown orthorhombic barium disilicide (BaSi2) thin-films on modified silicon (Si) substrates by a thermal evaporation method. The surface modification of Si substrate was performed by a metal-assisted chemical etching method. The effects of etching time te on crystalline quality as well as optical and electrical properties of the BaSi2 films were investigated. The obtained results showed that substrate modification can enhance the crystalline quality and electrical properties; reduce the light reflection; and increase the absorption of the BaSi2 thin-films. The te of 8 s was chosen as the optimized condition for surface modification of Si substrate. The achieved inferred short-circuit current density, Hall mobility, and minority carrier lifetime of the BaSi2 film at te of 8 s were 38 mA/cm2, 273 cm2/Vs, and 2.3 μs, respectively. These results confirm that the BaSi2 thin-film evaporated on the modified Si substrate is a promising absorber for thin-film solar cell applications.
关键词： hall mobility,substrate modification,photoresponse,silicide semiconductor,Barium disilicide,minority carrier lifetime,optical property,thermal evaporation
更新于2025-09-19 17:13:59
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High speed antimony-based superlattice photodetectors transferred on sapphire
摘要： We report the substrate transfer of InAs/GaSb/AlSb based type-II superlattice (T2SL) e-SWIR photodetector from native GaSb substrates to low-loss sapphire substrate in order to enhance the frequency response of the device. We have demonstrated the damage-free transfer of T2SL-based thin-films to sapphire substrate using top–down processing and a chemical epilayer release technique. After transfer the ?3 dB cut-off frequency increased from 6.4 GHz to 17.2 GHz, for 8 μm diameter circular mesas under ?15 V applied bias. We also investigated the cut-off frequency verses applied bias and lateral scaling to assess the limitations for even higher frequency performance.
关键词： high speed,photodetectors,substrate transfer,antimony-based superlattice,sapphire
更新于2025-09-19 17:13:59
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Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation
摘要： InAs quantum dots (QDs) have been grown on a GaAs (001) substrate in the subcritical region of InAs coverage for transition from a 2-dimensional (2D) to a 3-dimensional growth mode. Evolution of QDs and the corresponding wetting layer (WL) with InAs coverage has been investigated. Under specific growth conditions, quantum dot formation was observed only in samples where InAs coverage is more than 1.48 ML. The QD density increases sharply with InAs deposition initially but slows down with increased coverage. Photoluminescence (PL) shows the existence of a third peak, other than QD and WL peaks, at the low energy side of the WL peak, which is named the precursor peak. Evidence is presented supporting the theory that this peak is due to 2D InAs islands on a monolayer of InAs, which are small enough to localize excitons. Meanwhile, the WL peak is due to larger InAs islands under high compressive strain. During QD formation, the WL peak energy increases with the increase in InAs deposition. This is due to the sudden transfer of material from the bigger size of InAs islands to the QD. Our results show that the QD, WL, and precursor peaks coexist near the onset of QD formation. The power dependence of the three PL peaks is evident, which supports to our conclusion.
关键词： precursor peak,InAs quantum dots,wetting layer,photoluminescence,GaAs substrate
更新于2025-09-19 17:13:59
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Tunable phase shifter in substrate integrated waveguide
摘要： In this paper, A variable substrate integrated waveguide (SIW) phase shifter is presented. The phase shifter is formed by capacitively coupling varactors to a longitudinal slot on a SIW. Compared to other SIW phase shifters, our design is tunable, and only occupies 7.5 mm longitudinal length. Experiment results indicate the device is shown to have up to 60 degrees phase shift in the 5.3–6 GHz range with insertion loss better than 3 dB and return loss generally better than 20 dB.
关键词： substrate integrated waveguide (SIW),varactor,phase shifter
更新于2025-09-19 17:13:59