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oe1(光电查) - 科学论文

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出版时间
  • 2019
  • 2018
研究主题
  • PCB techonology
  • substrate integrated image line (SIIG)
  • co-axial probe feeding
  • single-layer transition
  • millimeter wave devices
  • short-slot coupler
  • Substrate integrated waveguide (SIW)
  • band-pass filters
  • diplexer
  • reconfigurable filter
应用领域
  • Optoelectronic Information Science and Engineering
  • Electronic Science and Technology
机构单位
  • Fujikura Ltd.
  • University of Electronic Science and Technology of China
  • University of Alberta
  • Hiroshima University
342 条数据
?? 中文（中国） ▾

  • [IEEE 2019 IEEE Conference on Antenna Measurements & Applications (CAMA) - Kuta, Bali, Indonesia (2019.10.23-2019.10.25)] 2019 IEEE Conference on Antenna Measurements & Applications (CAMA) - Substrate Integrated Waveguide Horn Antennas at Millimeter Waves

    摘要： Anticipating the potentials and the challenges of the millimeter wave regions, horn antennas in substrate integrated waveguide (SIW) are observed. The antennas are fed by an WR28 rectangular waveguide through a slotted transition to the SIW structure. A parameter study by variating the dimension of the rectangular slot was carried out to get optimal reflection characteristics. Afterwards, several geometry modifications, such as changing the opening of the horn, the flare length and adding some vias, are performed to study the characteristics of the antennas. The antennas have very good reflection characteristics at frequency 38 GHz and a simulated gain of around 7.5 dBi. Measurements with a vector network analyzer confirmed the results.

    关键词： substrate integrated waveguide,millimeter wave,horn antenna,WR28

    更新于2025-09-16 10:30:52

  • Design of miniaturized high selectivity folded substrate integrated waveguide band pass filter with Koch fractal

    摘要： This paper proposes the design of a novel double folded substrate integrated waveguide (FSIW) band pass filter (BPF) based on Koch space-filling curve (SFC). The folded SIW filter is incorporated with first and second iteration levels of Koch curve on central conducting layer. A prototype of second iteration Koch fractal FSIW BPF has been fabricated using substrate having dielectric constant 2.55 and thickness 0.508 mm for each layer and then tested. The fabricated second order filter has merits of compact size (0.204 λ0 2), high roll off rate (82.2 dB/GHz) and low insertion loss (<0.85 dB) in the X band.

    关键词： Folded Substrate Integrated Waveguide (FSIW) Koch fractal,selectivity,Bandpass filter,miniaturization

    更新于2025-09-16 10:30:52

  • Freestanding and supported processing of sub-70 μm kerfless epitaxial Si and thinned Cz/FZ Si foils into solar cells: An overview of recent progress and challenges

    摘要： Utilisation of expensive silicon (Si) material in crystalline Si modules has come down to 4 g Si per watt-peak in 2018, mainly as a result of reduction in wafer thickness and kerf losses as well as increase in module efficiencies. With continued progress in conventional multi-wire sawing of ingots, wafers as thin as 100 μm could eventually be produced. Beyond this, kerfless lift-off technologies are being investigated which enable wafer thicknesses well below 100 μm with negligible Si kerf waste. Such thin Si wafers and foils would be much lighter in weight than today's standard 165-180 μm-thick wafers and would exhibit considerable flexibility and fragility. This necessitates a rethink about how to handle and process thin Si into solar devices in a manufacturing line with high mechanical yield and high throughput. This paper gives a broad overview of the different approaches for fabricating solar cells on thin Si foils. In particular, three routes are discussed in detail, namely (1) freestanding processing of thin Si, (2) processing of thin Si supported mechanically on a conductive low-cost Si substrate (“wafer-equivalent” approach) and (3) processing of thin Si bonded to a transparent glass superstrate. In each case, the main challenges are explained and the recent progress in addressing them are summarised. Kerfless 50 μm-thick epitaxial Si foils lifted-off using porous Si and thinned-down Si wafers (below 70 μm) are used as model substrates for this work.

    关键词： Fragility,Layer transfer,Breakage,Lift-off,Glass superstrate,Thin silicon foils,Supported processing,Epitaxial silicon,Bonding,Adhesive,Wafer-equivalent,Low-cost silicon substrate,Flexibility,Kerfless,Freestanding

    更新于2025-09-16 10:30:52

  • Highly textured spray-deposited SnO2:F films with high haze for solar cells

    摘要： Highly textured F-doped SnO2 (FTO) films with appropriate haze, high transparency and low resistance have been deposited on quartz glass substrates by spray pyrolysis technique at different substrate temperatures from 380 °C to 630 °C. The results show that all FTO films with pyramidal-shape grains are polycrystalline with cassiterite tetragonal structure and exhibit an obviously (200) preferred orientation. When the substrate temperature is 530 °C, the dislocation density of FTO films reaches a minimum value of 1.90 × 1015 line/m2, while the film thickness and root-mean-square roughness reach the maximum values of 613 nm and 32.3 nm, respectively. Highly textured FTO films sprayed at 530 °C exhibit the lowest turn on voltage of 1.95 eV and the optimal comprehensive optoelectrical performance with the high transmittance of 83.78%, low sheet resistance of 8.4 Ω/□ and high haze of 12.69%, which are the promising candidates as the transparent conductive oxide front electrode for film solar cells.

    关键词： Haze,Substrate temperature,Textured,Spray pyrolysis,F-doped SnO2 films

    更新于2025-09-16 10:30:52

  • Substrate integrated waveguide based cavitya??backed selfa??triplexing slot antenna for Xa??Ku band applications

    摘要： A planar substrate integrated waveguide (SIW) based cavity-backed self-triplexing slot antenna is proposed for X-Ku band applications. The antenna comprises of the SIW cavity, radiating slots, and feeding networks. The radiating slots; that are etched on the upper metallic plane of the SIW, are backed up by the three radiated quarter cavities (QCs). The radiating slots in the respective QCs are of different lengths, excited by three separated orthogonal feed lines to resonate at three different frequencies as 11.01, 12.15, and 13.1 GHz. By fine-tuning the antenna parameters, an intrinsic input port isolation of better than 26 dB is realized which helps in achieving the self-triplexing property. The behaviors of individual cavity modes at three resonant frequencies are explained with the help of Z-parameter. The proposed antenna layout is easy to integrate with the planar circuit. The proposed antenna is fabricated and measured results display a close concern with the simulated results. Moreover, a unidirectional radiation pattern and gain of 5.1, 5.54, and 6.12 dBi at resonant frequencies are realized.

    关键词： quarter cavities (QCs),self-triplexing slot antenna,isolation,substrate integrated waveguide (SIW),cavity-backed

    更新于2025-09-16 10:30:52

  • Demonstration of Solar Cell on a Graphite Sheet with Carbon Diffusion Barrier Evaluation

    摘要： An amorphous Si (a-Si) solar cell with a back reflector composed of zinc oxide (ZnO) and silver (Ag) is potentially the most plausible and flexible solar cell if a graphite sheet is used as the substrate. Graphite supplies lightness, conductivity and flexibility to devices. When a graphite sheet is used as the substrate, carbon can diffuse into the Ag layer in the subsequent p-i-n process at 200–400 °C. To prevent this, we added an oxide layer as a carbon diffusion barrier between the carbon substrate and the back reflector. For the carbon diffusion barrier, silicon oxide (SiO2) or tin oxide (SnOx) was used. We evaluated the thermal stability of the back reflector of a carbon substrate using secondary-ion mass spectrometry (SIMS) to analyze the carbon diffusion barrier material. We confirmed the deposition characteristics, reflectance and prevention of carbon diffusion with and without the barrier. Finally, the structures were incorporated into the solar cell and their performances compared. The results showed that the back reflectors that were connected to a carbon diffusion barrier presented better performance, and the reflector with an SnOx layer presented the best performance.

    关键词： flexible device,carbon diffusion barrier,a-Si solar cell,carbon substrate,graphite sheet

    更新于2025-09-16 10:30:52

  • Optimization of a rear system based on Titanium Nitride for a flexible CuInSe2 solar cell

    摘要： Flexible thin film solar cells represent the future. This study concentrates on making CuInSe2 based solar cells non rigid by depositing the rear molybdenum contact onto inox 316. In order to overcome the Inox316 disadvantages such as the metallic impurities diffusion and the surface roughness, a bi-layer TiN/Ti have been introduced between the Mo rear contact and Inox 316. Two techniques have been employed: spray pyrolysis for CuInSe2 and by cathodic magnetron sputtering for Mo/TiN/Ti. CuInSe2 layers deposited onto glass substrates present high crystallinity with (112) preferred orientation at 550°C. However, these properties disappear for CuInSe2 on Inox316 with missing peak (112) and fall in the ratio Se/Cu from 1.9 to 1.1. According to EDS analysis, these results may be due to the Fe and Cu diffusion from Inox316 to CuInSe2 film, this is why the presence of TiN/Ti bi-layer improves the surface condition of Inox 316 and reduces Iron presence from 9.7% to 1.9% and Cr from 3.8% to 0.5%; this confirms its efficiency to improve the solar cell performance using Inox316 substrate.

    关键词： CuInSe2 solar cells,TiN/Ti,roughness substrate,diffusion barrier,Inox 316

    更新于2025-09-16 10:30:52

  • Molecular beam epitaxy growth and characterization of interband cascade infrared detectors on GaAs substrates

    摘要： Interband cascade infrared detectors (IB CIDs) are devices built from multiple cells connected in series using specially designed interband tunneling and relaxation regions. Such design enables effective collection of photogenerated carriers and is particularly beneficial in the case of short diffusion length in absorber’s material. In this work, we report on the growth and characterization of type-II InAs/GaSb superlattices IB CIDs on highly lattice-mismatched (001) GaAs substrates for mid-wave range. IB CIDs are characterized by high resolution X-ray diffraction, dark current and current responsivity. The performance of devices with different number of stages is discussed. Devices with 50% cut-off wavelength at 5.3 μm exhibit at temperature 300 K peak detectivity of 3.6×108 cmHz1/2W-1.

    关键词： B1. Gallium arsenide substrate,A3. Molecular beam epitaxy,B1. Antimonides,B3. Infrared devices

    更新于2025-09-16 10:30:52

  • Influence of ZnTe separation layer thickness on optical properties in CdTe/ZnTe double quantum dots on Si substrates

    摘要： We investigate the influence of the ZnTe separation layer thickness on the photoluminescence (PL) dynamics of CdTe/ZnTe double quantum dots (DQDs) on Si substrates. The results clarify that the DQD's structure effectively improves the limit of the carrier collection and the thermal stability of the corresponding single-layer QDs. The unusual temperature-dependent PL is explained using the single model for thermal redistribution of carrier states. This model indicates that the main nonradiative process at high temperatures is caused by scattering via multiphonons with longitudinal optical phonon energy of about 19–21.3 meV. The confinement-induced mixing and electron-carrier coupling effects cause blue-shift and enhanced PL intensity. We propose that the separation layer controls carrier dynamics in optoelectronic devices by modulating the thermal escape and e-h pairs in the intermixing layers.

    关键词： Quantum dots,Silicon substrate,Cadmium telluride,Thermal escape,Carrier confinement

    更新于2025-09-16 10:30:52

  • Femtosecond and nanosecond laser sintering of silver nanoparticles on a flexible substrate

    摘要： Pulsed-laser sintering of metal nanoparticles on flexible substrates has attracted increasing attention owing to its potential in direct printing of high-resolution patterns or fabricating flexible devices on thermally weak substrates. However, the physics of pulsed-laser sintering, including the microstructures, properties, and their correlations in different processing regimes, is not yet clearly understood. Especially, the characteristics of ultrafast laser sintering using femtosecond laser pulses without the heat accumulation effect and their comparison with those of nanosecond laser sintering are still unclear. This work analyzed the silver nanoparticle sintering process on polyethylene terephthalate substrates using a KrF nanosecond excimer laser and a Ti: sapphire femtosecond laser. The two laser sources with substantially different pulse widths were compared in terms of the sintering mechanisms, electrical conductivity, flexibility, and adhesion strength of the sintered silver films. Under optimal conditions, femtosecond laser sintering yielded better electrical conductivity and flexibility than nanosecond laser sintering. The nanosecond laser sintering occurred by solid-state diffusion (surface necking) or by full melting of the particles depending on the process condition. On the other hand, the femtosecond laser sintering took place only by inter-particle necking because the polymer substrate was damaged before melting of the particle began.

    关键词： laser,nanosecond,femtosecond,sintering,flexible substrate,silver

    更新于2025-09-16 10:30:52