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[IEEE 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Ottawa, ON, Canada (2019.7.8-2019.7.12)] 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Energy Efficiency Analysis of GaN-based Superluminescent Diodes
摘要： Gallium-nitride-based superluminescent light-emitting diodes (SLEDs) are attractive light sources for augmented or virtual reality devices and other applications. However, the energy efficiency of SLEDs is still far below the peak values reported for LEDs and laser diodes. Utilizing advanced numerical device simulation, this paper investigates the internal physical processes that cause the low SLED efficiency.
关键词： superluminescent light-emitting diode,Gallium Nitride,SLED,efficiency
更新于2025-09-16 10:30:52
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What limits the efficiency of GaN-based superluminescent light-emitting diodes (SLEDs)?
摘要： Gallium-nitride-based SLEDs are attractive light sources for augmented reality displays and other applications. However, the electrical-to-optical power conversion efficiency (PCE) of SLEDs is still far below the record-high values reported for LEDs. Utilizing advanced numerical device simulation, this paper investigates the internal physical pro- cesses that cause the low PCE of SLEDs. The poor hole conductivity strongly reduces the electrical efficiency, similar to laser diodes. However, in contrast to laser diodes, the rising carrier density in the active layers is identified as main reason for enhanced Auger recom- bination that severely limits the internal quantum efficiency. Design improvement options are demonstrated.
关键词： Superluminescent light-emitting diode,Auger recombination,InGaN/GaN,Laser diode,Self-heating,Power conversion efficiency,SLED,Hole conductivity
更新于2025-09-12 10:27:22