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Latent tracks and novel infrared waveguide formation in lithium tantalate irradiated with swift heavy ions
摘要： In this work, the formation mechanisms of latent ion tracks and infrared-light waveguides in ion-irradiated LiTaO3 single crystals were comparatively studied using 200 MeV Kr17+ irradiation at a fluence of 1 × 1012 cm?2 and 247 MeV Ar12+ irradiation at fluences of 1 × 1012 cm?2 and 3 × 1012 cm?2. Because of the intense electronic energy loss, the produced lattice disorder and formed latent track were experimentally determined through complementary techniques, including the analysis of transmission electron microscopy patterns and Rutherford backscattering/channeling spectra. Corresponding to different ions with different irradiation energies and electronic energy losses, the related spatio-temporal evolutions of lattice temperatures in Kr17+- and Ar12+-irradiated LiTaO3 crystals were numerically calculated using the inelastic thermal spike model. The simulation results theoretically describe the experimentally observed lattice disorder and latent track behaviors. The lattice swelling in the latent-ion-track regions was demonstrated using high-resolution x-ray diffraction patterns; the lattice swelling resulted in a decrease in the refractive index, thereby providing a path to tailor the optical properties and fabricate the waveguide structure. Optical measurements and simulations indicated that the formed LiTaO3 waveguide could effectively support the guided modes and confine the light propagation, especially in the infrared region.
关键词： swift heavy ion irradiation,latent ion track,electronic energy loss,infrared waveguide
更新于2025-11-14 17:04:02
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Electronic transport in MoSe <sub/>2</sub> FETs modified by latent tracks created by swift heavy ion irradiation
摘要： Unique characteristics of transition metal dichalcogenides (TMDCs) such as their tunable band gap and ultra-thin body thickness make them potential candidates for applications in optoelectronic, gas sensing and energy storage devices. In this work, 1.8 GeV Ta ions at different ion fluences ranging from 1 × 109 ions cm?2 to 6 × 1010 ions cm?2 were used to introduce amorphous defective regions, latent tracks, in MoSe2 to study the electronic transport behavior in irradiated TMDC-channel field-effect transistors (FETs). Defects in these materials induced by the swift heavy ion irradiation play a vital role in the device applications. The results show that carrier mobility decreases while resistance of the devices increases abruptly with increasing ion fluences. The impact mechanism of the latent tracks on electronic transport behavior in TMDC-channel FETs was analyzed in detail. It was assumed that the Bloch wave of electrons was strongly localized by the latent tracks induced by the SHI irradiation and the Bloch wave of electrons can be scattered by the latent tracks as well. This study helps to investigate the influence of the latent tracks on electronic transport in other 2D materials as well.
关键词： latent track,field-effect transistor,molybdenum selenide,electronic transportation,swift heavy ion irradiation
更新于2025-11-14 17:03:37
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Effect of Cu doping and swift heavy ion irradiation on PbS quantum dots and their applications in solar cells
摘要： Copper ions are incorporated into the PbS quantum dots as dopants via a chemical method and an ion irradiation method. For irradiating the samples, a 100?MeV copper swift heavy ion beam is used with three different doses of 1?×?1011, 3?×?1011, and 1?×?1012?ions/cm2. The doped and irradiated samples are characterised by different techniques and introduced as a sensitising layer in a solar cell. The current density–voltage characteristics of the solar cells are studied under white light illumination conditions and the solar cell parameters such as Jsc, Voc, fill factor, and efficiency are obtained. Efficiency as high as 4.78% is obtained for irradiated quantum dots, which is significantly higher than that of pristine and doped quantum dot solar cells. However, at higher ion dosage, the solar cell efficiency degrades due to unwanted particle agglomeration in quantum dots.
关键词： Cu doping,solar cells,swift heavy ion irradiation,PbS quantum dots
更新于2025-09-16 10:30:52
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The influence of stopping power and temperature on latent track formation in YAP and YAG
摘要： Transmission electron microscopy techniques were used to analyse the effect of swift heavy ion irradiation on both yttrium aluminium perovskite (YAP) YAlO3, and yttrium aluminium garnet (YAG) Y3Al5O12 single crystals. The crystals were irradiated with Kr, Xe and Bi ions with energies ranging from 107 to 1030 MeV. These ions have electronic stopping powers in the range from 11 to 41 keV/nm. The ion fluences were all within the non-overlapping regime for latent ion tracks i.e. 1011–1012 cm?2. A number of crystals were also irradiated at different temperatures of 80, 300 and 1000 K at a fixed stopping power. Latent ion tracks with an amorphous core were observed in all samples. The track diameters were seen to increase with increasing stopping power. Track diameters only increase by a significant amount as a result of irradiation temperature at 1000 K, whereas the diameters at 80 and 300 K differ only slightly. Ion tracks in YAG were also found to be larger than those in YAP at comparable stopping powers. It was found that on average 10 keV/nm of extra energy input is required to produce ion tracks in YAP with diameters similar to those in YAG. The results also suggest that the complexity of the crystal structure plays a significant role in the formation of ion tracks in these crystals.
关键词： YAG,Radiation damage,YAP,Latent track,TEM,Swift heavy ion
更新于2025-09-10 09:29:36
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Infrared spectroscopy of ion tracks in amorphous SiO2 and comparison to gamma irradiation induced changes
摘要： Ion track formation in amorphous SiO2was investigated using infrared spectroscopy. For comparison, one set of samples was also irradiated using 1.25 MeV gamma rays. An increase of 1044 cm-1 peak and decrease of 1078 cm-1 peak was observed in all cases. Experimental results were analysed using an analytical thermal spike model and non-standard model parameters were found. This finding is attributed to the amorphous structure of the material.
关键词： gamma rays,ion track,amorphous SiO2,infrared spectroscopy,thermal spike,swift heavy ion
更新于2025-09-09 09:28:46
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Swift heavy ion track formation in nanoporous Si: Wave packet molecular dynamics study
摘要： In this article we study the process of silicon relaxation after swift heavy ion (SHI) irradiation using ?rst-principles-based electron force ?eld eFF. We show that early stages of so-called nonthermal melting take place in the nanometric viscinity of SHI trajectory in both bulk Si and Si nanolayer, but result in structural modi?cations only for the last one. Our results shed light on recent experimental evidence of signi?cant reduction of threashold for SHI-induced damage creation in nanoporous Si.
关键词： nanoporous Si,nonthermal melting,wave packet molecular dynamics,electron force field,swift heavy ion
更新于2025-09-04 15:30:14