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- 2018
- MPPT
- photovoltaic (PV) power systems
- Induction motor
- three-phase four switch inverter
- two-inductor boost converter
- Electrical Engineering and Automation
- Sree Buddha College of Engineering
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Connecting post-pulsing electrical and microstructural features in GeTe-based inline phase change switches
摘要： Plan view scanning transmission electron microscopy was used to investigate the microstructural connections to device resistance in inline phase change switch devices. It was revealed that massive structural changes occur in GeTe during switching, most notably the formation of an assembly of voids along the device centerline and large GeTe grains on either side of an “active region.” Restructuring of this variety was tied to changes in ON-state resistance with increasing pulse number, where initially porous and fine-grained (10-20 nm) GeTe was converted to large crystalline domains comprising the majority of the RF gap (400-700 nm). A phenomenological model for this microstructure is presented in which the OFF pulse melts a given width of GeTe, and upon cooling crystalline material outside the melt region acts as a template for an inward-propagating crystalline growth front. The voids observed along the device centerline were correlated to increasing OFF state resistance and a relatively stable ON state with increasing pulse number via a series resistance model. As a result of this analysis, OFF state resistance was suggested as an early indicator of device reliability. An improved GeTe deposition process was implemented to limit void formation, which is shown to have a more stable OFF-state resistance with increasing pulse number.
关键词： device resistance,void formation,microstructure,GeTe,phase change switch
更新于2025-09-23 15:21:01
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Limit characteristics of switches based on planar open discharge
摘要： The limit characteristics of switches based on open discharge (OD) with counter-propagating electron beams were studied. Such switches (kivotrons) are able to generate high-voltage pulses with a sub-nanosecond leading edge. Separately obtained limit values of the switch parameters are as follows: current density up to 1000 A cm?2, operating voltage up to 100 kV, switching time τs down to 100 ps, the degree of pulse compression up to 100, a pulse repetition frequency up to 100 kHz (in burst mode), and an efficiency of more than 0.9. It was shown that the fast current development arises when the discharge self-sustaining mode is caused by the photoemission from the cathodes due to the resonant radiation emitted by fast helium atoms that have a large Doppler shift with respect to the line center. As a result, the emitted radiation reaches the cathodes without absorption by the helium gas. The presence of a fast atom group with an energy determined by the applied voltage was experimentally demonstrated. The dynamics of the plasma decay was studied. It is shown that the radiative, collisional-radiative, and three-body collision recombination mechanisms significantly contribute to the afterglow decay only when the plasma density remains higher than 1012 cm?3. The main mechanism of the further plasma decay is the diffusion of plasma particles onto the wall. Therefore, the effect of recombination in the plasma bulk is observed only during the first 10–20 μs of the afterglow. The results of the lasing characteristics of a copper vapor laser excited by pulses generated by an OD-based switch are presented.
关键词： copper vapor laser,subnanosecond switch,open discharge
更新于2025-09-23 15:21:01
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[IEEE 2018 International Conference on Optical MEMS and Nanophotonics (OMN) - Lausanne (2018.7.29-2018.8.2)] 2018 International Conference on Optical MEMS and Nanophotonics (OMN) - Digital Silicon Photonic MEMS Phase-Shifter
摘要： We report on a 4-bit digital silicon photonic MEMS phase-shifter with sub-microsecond switching time and low power consumption (< 10 uW). The device consists of 4 digitally switched phase-shifting units, which in total enable phase shift from (cid:2)(cid:2)(cid:1)/8 to 15pi/8 in increments of (cid:2)(cid:1)/8.
关键词： Silicon Photonic MEMS,Adiabatic Coupler,Phase Control,Photonic Integrated Circuit,Optical Switch
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting - Atlanta, GA, USA (2019.7.7-2019.7.12)] 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting - A Unit-Cell Discontinuous Galerkin Scheme for Analyzing Plasmonic Photomixers
摘要： Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those that can leverage their low-temperature, substrate-agnostic process integration potential. In this paper, enhancement-mode zinc-oxide TFTs were fabricated and their switching performance evaluated. These TFTs exhibit the drain-current density of 0.6 A/mm and minimal frequency dispersion, as evidenced by dynamic current–voltage tests. A high-frequency power switch figure of merit RON QG of 359 mΩ · nC was experimentally determined for 0.75-μm long-channel devices, and through scaling 45.9 mΩ · nC is achievable for 11 V-rated devices (where RON is ON-state drain–source resistance, and QG is gate charge). An RF switch cutoff frequency fc of 25 GHz was measured for the same 0.75-μm TFT, whereas fc exceeding 500 GHz and power handling in the tens of watts are projected with optimization.
关键词： zinc oxide,dc switch,Cutoff frequency,pulse measurements,gate charge,monolithic ICs,RF switch,ionic semiconductors,thin-film transistors (TFTs)
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Non-Volatile Indium Tin Oxide Electro-Optic Switch
摘要： The abstract of the paper is not provided in the given text.
关键词： non-volatile,silicon photonics,indium tin oxide,electro-optic switch
更新于2025-09-23 15:19:57
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Analysis of Homogeneous Waveguides via the Meshless Radial Basis Function-Generated-Finite-Difference Method
摘要： A time-delay switch (TDS) attack on a control system is caused by adversaries that strategically imbed time delays into such systems. TDS attacks can make a control system, or more specifically a distributed power control system, unstable. Time delays can be introduced in the sensing loop (SL) or control lines. This paper describes a novel, simple, and effective method to thwart TDS attacks on SL. The proposed method works by augmenting the controller with a time-delay estimator to estimate any time delays. The modified controller controls the system under TDS attack. Also, the time-delay estimator will track time delays introduced by an adversary using a modified model reference control with an indirect supervisor and a modified least mean square minimization technique.
关键词： time-delay estimation,model reference control,Time-delay switch attack
更新于2025-09-23 15:19:57
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Closed Loop Control of a Series Class-E Voltage-Clamped Resonant Converter for LED Supply with Dimming Capability
摘要： In this work, a new closed-loop control system is applied to a class-E resonant DC–DC converter with voltage clamp used for light-emitting diode (LED) supply. The proposed power topology was first described by Ribas et al. in a recent work. In the present paper, the LED current is sensed and used to implement a feedback control loop instead of the simplified feedforward scheme used in this previous reference. To design the control, a novel, simplified small-signal model is presented. This model is used to analyze the converter behavior as a function of the output power. The proposed approximation is significantly simpler than the multifrequency averaging technique normally used to analyze resonant converters. The feedback control loop is designed to reduce the LED low frequency current ripple while providing dimming control. Both the model and the control are verified by simulation and laboratory experimentation and the results obtained are in good accordance with the expected values.
关键词： small-signal dynamic model,light-emitting diode (LED) driver,high efficiency LEDs,resonant DC–DC converter,Class-E inverter,single-switch topology,closed-loop control,voltage clamp
更新于2025-09-23 15:19:57
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[IEEE 2019 International Conference on Optical MEMS and Nanophotonics (OMN) - Daejeon, Korea (South) (2019.7.28-2019.8.1)] 2019 International Conference on Optical MEMS and Nanophotonics (OMN) - Fast switching via frustrated total internal reflection in silicon photonics MEMS-actuated waveguides
摘要： We present a switching concept based on total internal reflection (TIR) and frustrated-TIR (F-TIR) using a MEMS movable waveguide fully compatible with silicon photonics technology. The switching element allows implementing large-scale photonic switches.
关键词： MEMS switch,silicon photonics,Optical Switching,data center networking
更新于2025-09-23 15:19:57
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Analytical Methods of Equivalent Circuit Model and Transmission Matrix for a Plasmonic Switch with Sensing Capability in Near-Infrared Region
摘要： In this paper, the simultaneous switching and sensing capabilities of a compact plasmonic structure based on a conventional rectangular hole in a silver film are proposed and investigated. The proposed structure has ultrahigh sensitivity up to 3000 nm/RIU and high figure of merit of 170 RIU?1. Also, the simulation results show the potential of the presented refractive index sensor to detect malaria infection, cancer cells, bacillus bacteria, and solution of glucose in water. Simultaneously, by changing the incident lightwave polarization, the structure behaves like a plasmonic switch, which has high extinction ratios of 15.81, 31.20, and 25.03 dB at three telecommunication wavelengths of 850, 1310, and 1550 nm, respectively. The ultrafast response time of 20 fs is achieved for the wideband application of the switching capability at the wavelength range of 1056 to 1765 nm. Moreover, the equivalent circuit model and transmission (ABCD) matrix methods are derived to validate the simulated results. Simple design, good agreement between the numerical and analytical results, biomedical applications, ultrahigh sensitivity, and ultrafast performance of the proposed structure help this idea to open up paths for design and implementation of other multi-application plasmonic devices in near-infrared region. To the best of our knowledge, the mentioned analytical methods have not been studied former at near-infrared wavelengths. Therefore, the achievements could pave the way for verifying the simulation results of plasmonic nanostructures in future investigations.
关键词： Near-infrared,Switch,Circuit model,Transmission matrix,Sensor,Biomedical,Polarization-multiplexing,Plasmonic
更新于2025-09-23 15:19:57
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All-Dielectric Metasurface-Enabled Near-Infrared Switching Based on Ge2Sb2Te5 Phase-Change Material
摘要： A metasurface for use in multiscale applications in the near-infrared (NIR) range is proposed herein. A detailed study is carried out on a polarization-insensitive, single-layered, recon?gurable swastika-like metasurface for NIR switching. Using germanium antimony telluride (Ge2Sb2Te5) as a phase-change material, the metasurface works as a NIR switch in the wavelength range from 1.8 lm and 2.2 lm. The metasurface consists of a patterned Ge2Sb2Te5 thin ?lm on a glass substrate, making it an all-dielectric metastructure. A high switching contrast ratio, i.e., ratio of maximum to minimum transmission, of 150 was obtained. Light with different polarizations had no effect on the switching behavior of the metasurface, making it a potential candidate for the development of advanced, tunable, and integrated photonic devices.
关键词： optical switch,phase-change material,toroidal dipole resonances,Metasurface
更新于2025-09-23 15:19:57