- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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[IEEE 2019 4th International Conference on Emerging Trends in Engineering, Sciences and Technology (ICEEST) - Karachi, Pakistan (2019.12.10-2019.12.11)] 2019 4th International Conference on Emerging Trends in Engineering, Sciences and Technology (ICEEST) - Comparison of Camera and Laser Scanner based 3D Point Cloud
摘要： A family of of?ine bridgeless quasi-resonant LED drivers is introduced. The prominent features of the proposed drivers are the capacitive isolation feature, inherent low line-current distortion, and high power factor. The concept is validated by a 30-W prototype operated in the range of 150–200 kHz and 30-V dc output (LED string voltage).
关键词： LED lamps,switching circuits,soft switching,Bridgeless circuits
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE CPMT Symposium Japan (ICSJ) - Kyoto, Japan (2019.11.18-2019.11.20)] 2019 IEEE CPMT Symposium Japan (ICSJ) - MMF Exciter Composed of Graded-Index Core Polymer Optical Waveguide Fabricated Applying the Mosquito Method and the Imprint Method
摘要： A family of of?ine bridgeless quasi-resonant LED drivers is introduced. The prominent features of the proposed drivers are the capacitive isolation feature, inherent low line-current distortion, and high power factor. The concept is validated by a 30-W prototype operated in the range of 150–200 kHz and 30-V dc output (LED string voltage).
关键词： switching circuits,soft switching,Bridgeless circuits,LED lamps
更新于2025-09-19 17:13:59
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Power Efficient Current Driver Based on Negative Boosting for High-Speed Lasers
摘要： Vertical-cavity surface-emitting lasers (VCSELs) are commonly used in high-speed optical communication and 3D sensing applications. Both of these applications require high switching frequency and a short rise time of the VCSEL current. The parasitic inductance of the wire (connecting the driver with VCSEL) makes it challenging to achieve a short rise time, which often incur increased supply voltage and excessive power consumption. This paper utilizes a momentary boosting in supply voltage to overcome the parasitic inductance of the wire with minimal power overhead. The proposed technique uses a precalculated boosting capacitance to produce negative voltage for common-anode VCSELs. The boosting capacitance provides the required amount of charge during the rising transition and automatically disconnects itself in steady-state. Circuit simulations reveal up to three times shorter rise time at the negligible cost of less than 10% power overhead.
关键词： negative supply boosting,vertical cavity surface emitting lasers (VCSEL),switching circuits,CMOS laser drivers,pulsed laser diode driver
更新于2025-09-16 10:30:52
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges
摘要： The stability of GaN-on-Si HEMTs with substrate-to-source termination is analyzed in a high-voltage half-bridge. The work exposes that external substrate termination creates a parasitic substrate loop, which leads to unstable switching behavior under certain conditions. Stability analysis reveals that parasitic inductance in the substrate-loop alone is sufficient for instabilities, even with zero parasitic inductance in the gate- and power-loops. A systematic analytical stability analysis is carried out based on a small-signal equivalent circuit. The theory is verified by measurements using a PCB-embedded 600 V GaN HEMT with integrated gate driver. Adequate damping of the substrate loop resonance enables stable operation of the half-bridge module.
关键词： Semiconductor Device Packaging,Gallium Nitride,Switching Circuits,Circuit Stability,Substrate Potential,Bridge Circuits
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - A Voltage-Edge-Rate-Limiting Soft-Switching Inverter for Wide-Bandgap Devices
摘要： Wide-bandgap (WBG) switches can achieve switching times on the order of several nanoseconds. However, faster switches generate larger inverter output dv/dt. Various deleterious effects attributed to large inverter dv/dt have been observed in various applications, especially in motor drive systems. The effects include false turn-on of WBG switches due to cross-talk, transient over-voltages at motor terminals, electromagnetic interference, and motor bearing failures due to micro arcs. A common approach for limiting peak inverter dv/dt involves the insertion of a dv/dt filter. However, the dv/dt filter introduces extra power losses and increases the size/weight of the heat sink. Soft-switching circuits can reduce inverter dv/dt and switching losses, but using soft-switching to accurately control dv/dt has not been fully explored. A new soft-switching circuit, entitled the auxiliary resonant soft-edge pole (ARSEP), is set forth. The ARSEP improves the available soft-switching circuits so that the dv/dt can be accurately controlled through circuit parameter design. An ARSEP inverter prototype based on SiC MOSFETs was designed, simulated, built, and tested to verify its performance and benefits. Compared to a conventional hard-switched inverter with a dv/dt filter, the ARSEP inverter results in a significant reduction in overall power loss, inductor volume, and weight.
关键词： SiC MOSFETs,soft-switching circuits,auxiliary resonant soft-edge pole (ARSEP),inverter output dv/dt,Wide-bandgap (WBG) switches
更新于2025-09-04 15:30:14