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[IEEE 2019 IEEE International Conference on Sensors and Nanotechnology (SENSORS & NANO) - Penang, Malaysia (2019.7.24-2019.7.25)] 2019 IEEE International Conference on Sensors and Nanotechnology - Effect of Front-Surface-Field and Back-Surface-Field on the Performance of GaAs Based-Photovoltaic Cell
摘要： GaAs structures are commonly used in concentrated solar cell application, whereas the active region of the cell requires front surface field (FSF) and back surface field (BSF) to complete the band diagram and to improve the conversion efficiency up to 22 % under AM 1.5 illumination condition. However, the integration of different FSF and BSF materials such as AlGaAs, InGaP and InAlP contribute to diverse performance. A fair comparison between these materials will help to optimize the performance of GaAs devices. In this work, Silvaco TCAD software was used to simulate GaAs PV cell with different FSF and BSF materials under 1-sun and 100-sun AM 1.5 illumination condition. A conversion efficiency of 24.08 % and 27.22 % was achieved with InAlP FSF layer under 1-sun and 100-sun AM 1.5 spectrum, respectively. The results obtained from this study will contribute to a better understanding on the effect of FSF and BSF layers while obtaining the optimum FSF and BSF material for the GaAs-based photovoltaic cell.
关键词： BSF,Silvaco TCAD,Gallium Arsenide cell,FSF
更新于2025-09-16 10:30:52
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Device Structure and Passivation Options for the Integration of Scaled IGZO TFTs
摘要： The focus of this work is on the performance dependence of scaled the device structure and IGZO TFTs with variations semiconductor passivation scheme. TCAD simulation was used to provide insight on the details which establish the limits on electrostatic control. Dielectrics used for the gate and back-channel regions have been adjusted to overcome short-channel effects, along with required modifications in process recipes for PECVD passivation layers, oxygen ambient annealing, and ALD capping material. Scaled devices with channel lengths as small as L = 1 μm have been investigated and evaluated by the electrostatic behavior, and stability when subjected to thermal and bias stress. An optimized process and associated procedural details for scaled devices is presented, along with suggested options for further channel length reduction to submicron dimensions.
关键词： IGZO TFTs,scaling,TCAD simulation,electrostatic control,PECVD,short-channel effects,ALD,thermal stability,bias stress,passivation
更新于2025-09-16 10:30:52
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High-efficiency CIGS solar cell by optimization of doping concentration, thickness and energy band gap
摘要： In this paper, the performance of copper-indium-gallium-diselenide Cu(In,Ga)Se2 solar cell, with ZnO window layer, ZnSe bu?er layer, CIGS absorber layer and InGaP re?ector layer was studied. The study was performed using the TCAD Silvaco simulator. The e?ects of grading the band gap of CIGS absorber layer, the various thicknesses and doping concentrations of di?erent layers have been investigated. By optimizing the solar cell structure, we have obtained a maximum open circuit voltage of 0.91901 V, a short circuit current density of 39.89910 mA/cm2, a ?ll factor (FF) of 86.67040% and an e?ciency of 31.78% which is much higher than the values for similar CIGS solar cells reported so far.
关键词： e?ciency,CIGS,optimization,TCAD Silvaco,Thin ?lm solar cells
更新于2025-09-16 10:30:52
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Analysis and numerical design of Resistive AC-Coupled Silicon Detectors (RSD) for 4D particle tracking
摘要： In this paper we present the numerical simulation of silicon detectors with internal gain as the main tool for 4-dimensional (4D) particle trackers design and optimization. The Low-Gain Avalanche Diode (LGAD) technology and its present limitations are reviewed with the aim of introducing the Resistive AC-Coupled Silicon Detectors (RSD) paradigm as a case study of our investigation. Authors here present Spice-like and 2D/3D Technological Computer-Aided Design (TCAD) simulations to characterize sensors in terms of both their electrostatic behavior, capacitive (dynamic) coupling and radiation-hardness performances, showing the methodological approach used in order to extract the set of layout rules allowing the release of RSD1, the incoming production run at Fondazione Bruno Kessler (FBK) of next-generation silicon detectors for 4D tracking with intrinsic 100% fill-factor.
关键词： Charge multiplication,Fast detectors,Solid-state silicon detectors,TCAD modeling,Particle tracking detectors,Particle timing detectors
更新于2025-09-16 10:30:52
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Plug-and-Play Generation and Manipulation of Squeezing on Chip
摘要： We propose a novel graphic method to enable the analysis of the field-effect transistor (FET) threshold voltage variation (cid:2)Vth due to random telegraph signals in a percolative channel. First, through technology computer-aided design simulation with no percolation, both a minimum (cid:2)Vth and a critical curve in a mloc ? σloc plot are produced. The former constitutes a statistical distribution far away from the conventional log-normal one. In the latter, mloc and σloc are the mean and the standard deviation, respectively, of a well-known normal variable in Mueller–Schulz’s percolation theory. The critical mloc ? σloc curve divides the plot into the allowed region and the forbidden region and will go down with increasing gate size. Then, (cid:2)Vth contours in the allowed region are graphically created. While applying to existing experimental (cid:2)Vth statistical distributions of SiON- and high-k metal gate (HKMG)-scaled FETs, resulting paired mloc and σloc at high (cid:2)Vth remain intact, regardless of gate size or gate stack type. This means that the underlying percolation patterns resemble each other, due to the same manufacturing process used. However, if these paired mloc and σloc fall in the forbidden region, it is the critical mloc ? σloc curve dominating. Application to bias and temperature instability statistical data in literature is straightforwardly well done.
关键词： percolation,technology computer-aided design (TCAD),Bias and temperature instability (BTI),trap,random telegraph signals (RTSs),field-effect transistors (FETs)
更新于2025-09-16 10:30:52
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Device simulation of Nanopillar based CdS/CdTe solar cell
摘要： A Nanopillar based n-CdS/p-CdTe solar cell has been simulated using TCAD device simulator SILVACO. Both the electrodes have been realized on the same plane and at the backside of the device. Detailed study has shown that there is a significant improvement in the extracted parameters of interest for the proposed device in comparison with its equivalent planar p-n junction counterpart. Besides, effective carrier collection by the Nanopillar, has also resulted improvement in the parameters of interests such as maximum power generated, fill factor and conversion efficiency. The parameters of interests have also been improved with the increase of the height of the Nanopillar.
关键词： TCAD simulator,Nanopillar,Fabrication,Back contact,CdS/CdTe solar cell,Planar
更新于2025-09-12 10:27:22
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Simulation of Multilayer Energy Efficient OLEDs for Flexible Electronics Applications
摘要： Organic light emitting (OLEDs) work on electro luminescence principles and these OLEDs are commercially available and can be used in display because of the low power consumption. Proposed research deals with the design of high-efficiency OLEDs, including electrical and optical design of OLEDs. The Luminescent efficiency of bilayer and Triple layer OLED experiment and analysis was done using the Silvaco TCAD tool in this research work. The simulation of electronics and optical features such luminescence power versus anode voltage, anode voltage versus anode current characteristics and exciton state of both bilayer and Triple layer OLEDs were discussed. The physical design, processes as well as principles of OLED has been discussed and operational distribution of Langevin recombination inside proposed structures were acquired and discussed.
关键词： Efficiency Improvement,Organic Light emitting diode (OLEDs),Multilayer,TCAD
更新于2025-09-12 10:27:22
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Pulsed laser annealing for advanced technology nodes: modeling and calibration
摘要： Pulsed laser annealing is one of the promising low thermal budget approaches to overcome process limitations and develop alternative schemes to achieve better device performance and enable 3D architectures. Its applications range from the Front End Of the Line (doping, contacts, strain engineering) to Back End Of the Line (Cu grain engineering) in logic and memory devices. One key enabler for integrating this disruptive technology in the coming highly challenging technology nodes is an accurate time-resolved modeling of laser matter interaction, thermal diffusion, phase change and species diffusion at the nanosecond timescale, all to be solved self-consistently. In this paper, we will present the TCAD simulation package of the laser annealing process (LASSE Innovation Application Booster or LIAB), with a specific focus on the phase field model and calibration of relevant materials. The coupled partial differential equation system is described and a methodology for materials calibration, especially challenging in the melting regime, is detailed with results shown for Ge and SiGe, with a application on a typical p-type finFET contact region anneal 2D use case.
关键词： Germanium,Laser annealing,Material modification,TCAD model calibration,Silicon-Germanium,Self-consistent models
更新于2025-09-11 14:15:04
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Numerical Optimization of 0.5‐μm‐thick Cu (In1-xGax) Se2 Solar Cell
摘要： This paper presents a numerical simulation of 2D ultra-thin Cu (In1-xGax) Se2 solar cell under drift-diffusion transport across heterojunction interfaces. The validation of the CIGS model is performed by matching the electrical characteristics of the experimental and simulation results. The surface recombination velocity of CdS/CIGS heterojunction interface and element composition Ga/(In+Ga) ratio effect on the optical properties and electrical performances of CIGS absorber are investigated. The thickness dependence and carrier concentration of the semiconductor layers on the cell performance are investigated. The nanostructured Ag, Au, or Cu back mirror is used to replace conventional Mo back contact to improve light absorption in the ultra-thin CIGS layer. Best power conversion efficiency of 21.74 % has been obtained with a thinner absorber of about 0.5‐ μm‐ thick under AM1.5 illumination condition, 300K.
关键词： Efficiency,Ultra-thin film solar cells,Heterostructure,Nanostructured back mirror,TCAD
更新于2025-09-11 14:15:04
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Paper Title The Breakdown Voltage of AlGaN/GaN HEMT is Restricted to The Structure Parameters of The Device: A Study Based on TCAD
摘要： The high electron mobility transistor (HEMT) based on Gallium nitride (GaN) is a new power switching device with high switching frequency, high temperature resistance and high voltage resistance, which has aroused wide research interests. However, a key question need to consider is that the breakdown voltage (BV) of the power AlGaN/GaN HEMT is far from the theoretical value. In this paper, the relationship between the breakdown voltage of AlGaN/GaN HEMT and the gate to drain distance (Lgd) and buffer layer thickness (T(buffer)) has been studied in theory. With the TCAD software, the effect of gate to drain distance on the breakdown voltage of AlGaN/GaN HEMT had been demonstrated. Further, after the breakdown voltage saturation, the relationship of breakdown voltage and buffer layer thickness was studied. The results demonstrate that the breakdown voltage of power AlGaN/GaN HEMT increases with the gate to drain distance, but it will be gradually saturate. Then, as the increase of buffer layer thickness, breakdown voltage will rise again. As a result, breakdown voltage of power AlGaN/GaN HEMT increases with the gate to drain distance rise up and is restricted by the thickness of the buffer layer.
关键词： TCAD,AlGaN/GaN HEMT,Breakdown Voltage,Structure Parameters
更新于2025-09-10 09:29:36