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[IEEE 2018 IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP) - Auckland (2018.8.5-2018.8.8)] 2018 IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP) - Performance Enhancement Of Cmos Terahertz Detector
摘要： For improving the performance of CMOS terahertz detectors, parasitic capacitance reduction technique and new working model are proposed for MOSFET devices. We investigate the influence of source parasitic capacitance and drain-to-source current on the performance of CMOS terahertz detectors and analyze the relationship to the voltage responsivity (RV) and noise equivalent power (NEP) of detectors. Experiment on the CMOS detectors with a 650GHz antenna shows the maximum improvement of voltage responsivity can attain to 155% by suppressing gate-source parasitic capacitance. The additional drain current Ids can further increase RV while NEP remains unchanged.
关键词： Antenna,CMOS THz detectors,DC current,Voltage response
更新于2025-09-23 15:23:52
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[IEEE 2019 14th IEEE Conference on Industrial Electronics and Applications (ICIEA) - Xi'an, China (2019.6.19-2019.6.21)] 2019 14th IEEE Conference on Industrial Electronics and Applications (ICIEA) - Research and Application of Remote Removal of Floating Foreign Objects on Transmission Lines Based on Fiber Laser
摘要： We present a detailed investigation of the responsivity and the noise in room temperature THz direct detectors made of YBa Cu O (YBCO) thin-film nano-bolometers. The YBCO nano-bolometers are integrated with planar spiral antennas covering a frequency range from 100 GHz to 2 THz. The detectors were characterized at 1.6 THz, 0.7 THz, 400 GHz and 100 GHz. The maximum electrical responsivity of 70 V/W and a minimum noise equivalent power (NEP) of 50 pW/Hz were measured, whereas the highest optical responsivity was 45 V/W. The noise in nano-bolometers is independent on the device volume and for a given modulation frequency and a dc voltage Hz.
关键词： room temperature operation,YBa Cu O (YBCO) film,responsivity,THz detectors,Bolometer
更新于2025-09-19 17:13:59
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[IEEE 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Rome, Italy (2019.6.17-2019.6.20)] 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Drift-induced Nonreciprocal Graphene Plasmonics
摘要： We present a detailed investigation of the responsivity and the noise in room temperature THz direct detectors made of YBa Cu O (YBCO) thin-film nano-bolometers. The YBCO nano-bolometers are integrated with planar spiral antennas covering a frequency range from 100 GHz to 2 THz. The detectors were characterized at 1.6 THz, 0.7 THz, 400 GHz and 100 GHz. The maximum electrical responsivity of 70 V/W and a minimum noise equivalent power (NEP) of 50 pW/Hz were measured, whereas the highest optical responsivity was 45 V/W. The noise in nano-bolometers is independent on the device volume and for a given modulation frequency and a dc voltage.
关键词： THz detectors,YBa Cu O (YBCO) film,responsivity,room temperature operation,Bolometer
更新于2025-09-16 10:30:52
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[IEEE 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018) - Nagoya, Japan (2018.9.9-2018.9.14)] 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Far Infrared and THz Detectors: Principles of Operation and Figures of Merit
摘要： In this paper we discuss characteristics of detectors and their experimental applications in the Far Infared (FIR) and lower THz spectral range: 50-3000 GHz (6mm-100 μm), with special attention to Plasma Diagnostics, THz-TDS and Free Electron Lasers (FEL). The International System of Units (SI) will be used throughout.
关键词： THz-TDS,Far Infrared,THz Detectors,Plasma Diagnostics,Free Electron Lasers
更新于2025-09-09 09:28:46
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[IEEE 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018) - Nagoya, Japan (2018.9.9-2018.9.14)] 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Characteristics of VOx Microbolometer on Si<inf>3</inf>N4/SiO<inf>2</inf> Membrane Fabricated by Deep-RIE and XeF2 Vapor Etching for THz-detectors
摘要： VOx thin films were fabricated on Si3N4/SiO2/Si substrates by metal-organic decomposition (MOD). Then, a VOx microbolometer was fabricated on a Si3N4/SiO2 membrane. A membrane was realized by dry etching of the backside of the Si substrate using a Deep-RIE and XeF2 vapor etching with a good reproducibility. The DC sensitivity of the bolometer on membrane was 2310 W-1. This value was about 15 times higher than that of the VOx microbolometer on the Si3N4/SiO2/Si substrate and about two orders of magnitude higher than that of the Bi microbolometer on a dielectric substrate.
关键词： Si3N4/SiO2 membrane,THz-detectors,VOx microbolometer,Deep-RIE,XeF2 vapor etching
更新于2025-09-09 09:28:46