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Direct Imaging of Current‐Induced Transformation of a Perovskite/Electrode Interface
摘要： Formamidinium-lead-iodide (FAPbI3) perovskite films are subjected to a long-term action of the constant electrical current in the dark, using planar vacuum-deposited gold electrodes. The current-induced transformation is monitored by the time-of-flight secondary ion mass spectrometry (ToF-SIMS) mapping complemented by microscopic, spectroscopic methods, and X-ray diffraction. The migration of chemical species inside the lateral interelectrode gap is clearly visualized by ToF-SIMS. Those species correspond to both electrode material and perovskite itself, so that the perovskite/electrode interface becomes disrupted. As a result, the interelectrode gap shrinks, which is reflected in the surface images.
关键词： interfaces,dark current,gold electrodes,perovskites,ToF-SIMS mapping
更新于2025-11-25 10:30:42
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Chemical imaging of buried interfaces in organic-inorganic devices using FIB-ToF-SIMS
摘要： Organic-inorganic hybrid materials enable the design and fabrication of new materials with enhanced properties. The interface between the organic and inorganic materials is often critical to the device’s performance and therefore chemical characterization is of significant interest. Since the interfaces are often buried, milling by focused ion beams (FIB) to expose the interface is becoming increasingly popular. Chemical imaging can subsequently be obtained using secondary ion mass spectrometry. However, the FIB milling process damages the organic material. In this study, we make an organic-inorganic test structure to develop a detailed understanding of the processes involved in FIB milling and SIMS imaging. We provide an analysis methodology that involves a “clean-up” process using sputtering with an argon gas cluster ion source to remove the FIB induced damage. The methodology is evaluated for two additive manufactured devices, an encapsulated strain sensor containing silver tracks embedded in a polymeric material and a copper track on a flexible polymeric substrate created using a novel nanoparticle sintering technique.
关键词： FIB,additive manufacturing,hybrid interfaces,ToF-SIMS,polymer,Argon cluster,milling
更新于2025-09-23 15:22:29
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Decoupling Contributions of Chargea??Transport Interlayers to Lighta??Induced Degradation of pa??ia??n Perovskite Solar Cells
摘要： Perovskite solar cells (PSCs) have demonstrated impressive performance, while their operation stability still requires substantial improvements before this technology can be successfully commercialized. There is a growing evidence that stability of PSCs is strongly dependent on the interface chemistry between the absorber films and adjacent charge transport layers, while the exact mechanistic pathways remain poorly understood. Here we present a systematic approach for decoupling the degradation effects induced by the top electron transport layer (ETL) of the fullerene derivative PC61BM and various bottom hole-transport layer (HTL) materials assembled in p-i-n perovskite solar cells configurations. We show that chemical interaction of MAPbI3 absorber with PC61BM most aggressively affects the operation stability of solar cells. However, washing away the degraded fullerene derivative and depositing fresh ETL leads to restoration of the initial photovoltaic performance when bottom perovskite/HTL interface is not degraded. Following this approach and refreshing ETL after light soaking of the samples and before completing the solar cell architectures, we were able to compare the photostability of stacks with various HTLs. It has been shown that PEDOT:PSS and NiOx induce significant degradation of the adjacent perovskite layer under light exposure, while PTAA provides the most stable perovskite/HTL interface. ToF-SIMS analysis of fresh and aged samples allowed us to identify chemical origins of the interactions between MAPbI3 and HTLs. The proposed research methodology and the revealed degradation pathways should facilitate future development of efficient and stable perovskite solar cells.
关键词： hole transporting materials,perovskite solar cells,TOF-SIMS,stability,interfacial degradation
更新于2025-09-23 15:21:01
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WO3 processed by direct laser interference patterning for NO2 detection
摘要： In this paper two kind of sensors based on WO3 sputtered by magnetron sputtering and annealed at 600°C have been studied. The first kind was processed by two-dimensional direct laser interfering patterning (DLIP) and the second one without any additional treatment. Morphological and structural characterization have shown a hole structure in a periodic line-pattern for the DLIP-processed sensors and a flat surface for the only-annealed sensors, both with a tetragonal WO3 phase. TOF-SIMS analysis has revealed that the first WO3 layers are reduced for both samples, which could improve sensing performance. Promising response enhancement of DLIP-processed sensors has been observed for low concentrations of NO2 (from 0.5 ppm to 5 ppm) at 200°C, lowering the limit of detection (LOD) to 10 ppb, half of the LOD of the only-annealed sensors (20 ppb). Cross sensitivity to CO and HCHO have been investigated and the sensing mechanisms discussed.
关键词： Arrhenius,WO3,NO2,TOF-SIMS,tetragonal phase,DLIP
更新于2025-09-16 10:30:52
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ToF-SIMS and TIRF microscopy investigation on the effects of HEMA copolymer surface chemistry on spatial localization, surface intensity, and release of fluorescently labeled keratinocyte growth factor
摘要： The need for direct biomaterial-based delivery of growth factors to wound surfaces to aid in wound healing emphasizes the importance of interfacial interactions between the biomaterial and the wound surface. These interactions include the spatial localization of growth factor, the surface intensity of growth factor in contact with the wound, and the release profile of growth factor to the wound surface. The authors report the use of time-of-flight secondary ion mass spectrometry to determine the relationship between biomaterial surface chemistry and the spatial localization of growth factor. They have implemented a novel application of total internal reflectance fluorescence (TIRF) microscopy to measure the surface intensity and release of growth factor in contact with a glass substrate that has been used to model a wound surface. Detailed information regarding TIRF experiments has been included to aid in future studies regarding the biomaterial delivery to interfaces. The authors have evaluated the effects of (hydroxyethyl)methacrylate (HEMA) homopolymer, 5.89% methyl methacrylate/HEMA, and 5.89% methacrylic acid/HEMA surface chemistry on the spatial localization of AlexaFluor 488-labeled keratinocyte growth factor (AF488-KGF), AF488-KGF surface intensity at the copolymer surface, and release to a glass substrate. KGF is known to promote re-epithelialization in wound healing. The results show that the two copolymers allow for increased surface coverage, surface intensity, and release of AF488-KGF in comparison to the homopolymer. It is likely that differences in these three aspects could have a profound effect on the wound healing response.
关键词： ToF-SIMS,TIRF microscopy,HEMA copolymer,keratinocyte growth factor,wound healing
更新于2025-09-16 10:30:52
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ToF-SIMS of OLED Materials using Argon Gas Cluster Ion Beam: A Promising Approach for OLED Inspection
摘要： With the increasing adoption of organic light-emitting diodes (OLEDs), analytical methods and tools for their inspection are becoming an important part of the field. In this study, we analyzed four organic materials for OLEDs by using time-of-flight secondary ion mass spectrometry (ToF-SIMS) with 20 keV Ar cluster ion beam projectiles. The fragmentation ratio was plotted as a function of the size of the Ar cluster ions. We reconfirmed that a larger Ar cluster ion beam, which has lower energy per atom, is more effective for detecting secondary molecular ion signals. However, the fragmentation ratio of 4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC) showed a different tendency. The reason for this difference was investigated and validated by scanning the cluster ion size and comparing it with other mass spectrometric results. This study demonstrates the potential of ToF-SIMS in combination with a cluster ion beam to verify defects in OLEDs that might occur in the manufacturing process.
关键词： ToF-SIMS,Impurity,Fragmentation ratio,Defect inspection,OLED,Ar GCIB
更新于2025-09-12 10:27:22
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TOF‐SIMS MS/MS Depth Profiling of OLED Devices for Elucidating the Degradation Process
摘要： Rationale: OLED products based on display applications have become popular in the past 10 years, and new products are being commercialized with rapid frequency. Despite the many advantages of OLEDs, these devices still have a problem concerning lifetime. To gain an understanding of the degradation process, the authors have investigated the molecular information on deteriorated OLED devices using TOF-SIMS. Methods: TOF-SIMS depth profiling is an indispensable way to evaluate OLED devices. However, the depth profiles of OLEDs are generally difficult due to the mass interference among organic compounds, including degradation products. In this study, the MS/MS depth profiling method was used to characterize the OLED devices. Results: After the degradation, the defects which were comprised of small hydrocarbons were observed. Within the defect area, the diffusion of all OLED compounds were also observed. It is supposed that the source of small hydrocarbons derives from decomposition of the OLED compounds and/or contaminant at the ITO interface. Conclusions: The true compound distributions have been discovered by MS/MS depth profiling methods. The results suggest that the luminance decay is mainly due to the decomposition and diffusion of OLED compounds, and that OLED decomposition may be accelerated by adventitious hydrocarbons present at the ITO surface.
关键词： OLEDs,MS/MS Depth profiling,TOF-SIMS,Tandem MS
更新于2025-09-11 14:15:04
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Fabrication of a Bilayer Structure of Cu and Polyimide to Realize Circuit Microminiaturization and High Interfacial Adhesion in Flexible Electronic Devices
摘要： With commercialization of the 5th generation mobile communication system and the further spread of the Internet of Things, industrial innovation is arriving with new business fields related to concepts such as high-speed communication, self-driving vehicles, and remote medicine. One of the challenges is the realization of flexible devices with high-definition circuits, which requires new fabrication techniques for Cu films on polymer substrates to meet demands and an understanding of the Cu/polymer interfacial nanostructure to assure product quality. We have developed a promising technique for the fabrication of Cu film on polyimide (PI), which consists mainly of very simple semiconductor device processes. This technique allows for control of the Cu thickness with nanometer precision to form miniaturized Cu circuits with potential advantages in terms of interfacial adhesion and material/production costs. The Cu/PI interfaces fabricated by conventional vapor deposition and the new technique are systematically analyzed using synchrotron hard-X-ray photoelectron spectroscopy (HAXPES), scanning transmission electron microscopy (STEM), and time-of-flight secondary ion mass spectroscopy (TOF-SIMS). With conventional vapor deposition, it was discovered that evaporated Cu atoms decompose the PI and an oxidation layer with a thickness of several nanometers that deteriorates the interfacial adhesion could be visualized at the Cu/PI interface. With the new technique, the decomposition of PI and interfacial oxidation are significantly suppressed. Furthermore, the proposed technique can be broadly applied to the investigation of metal/polymer interfaces fabricated by polymer coating on a metal substrate, which has so far been impossible.
关键词： STEM,TOF-SIMS,Flexible printed circuits,Microminiaturization,Interfacial adhesion,HAXPES,Flexible electronics
更新于2025-09-10 09:29:36
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - The failure analysis of LED sulfur corrosion
摘要： As a common problem of LED failure, the sulfur corrosion that can cause the LED luminous flux reduced, LED color temperature drifted, in the most severe cases, LED damaged. The sulfur corrosion of LED which affected the reliability of LED was always the focus of research. In this paper, the general analysis methods about the LED sulfur corrosion were clearly elaborated. The SEM&EDS, TOF-SIMS and AES were applied, which provided new methods to analysis the sulfur corrosion. Meanwhile, the corrosion path was discussed. Then, how to avoiding the sulfur corrosion of LED was also suggested.
关键词： TOF-SIMS,corrosion path,AES,sulfur corrosion
更新于2025-09-09 09:28:46
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Internal Energy Distribution of Secondary Ions Under Argon and Bismuth Cluster Bombardments: “Soft” Versus “Hard” Desorption–Ionization Process
摘要： The emission/ionization process under massive argon cluster bombardment was investigated by measuring the internal energy distributions of a series of benzylpyridinium ions. Argon clusters with kinetic energies between 10 and 20 keV and cluster sizes ranging from 500 to 10,000 were used to establish the influence of their size, energy, and velocity on the internal energy distribution of the secondary ions. It is shown that the internal energy distribution of secondary ions principally depends on the energy per atom or the velocity of the cluster ion beam (E/n ∝ v2). Under low energy per atom (E/n ? 10 eV), the mean internal energy and fragmentation yield increase rapidly with the incident energy of individual constituents. Beyond 10 eV/atom impact (up to 40 eV/atom), the internal energy reaches a plateau and remains constant. Results were compared with those generated from bismuth cluster impacts for which the mean internal energies correspond well to the plateau values for argon clusters. However, a significant difference was found between argon and bismuth clusters concerning the damage or disappearance + impact cross section. A 20 times smaller disappearance cross section was measured under 20 keV Ar2000 + bombardment, thus quantitatively showing the low damage effect of large argon clusters compared to 25 keV Bi5 for almost the same molecular ion yield.
关键词： Bismuth cluster,Argon cluster,Internal energy,TOF-SIMS,Benzylpyridinium ion
更新于2025-09-04 15:30:14