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[IEEE 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019 - Boston, MA, USA (2019.6.2-2019.6.7)] 2019 IEEE MTT-S International Microwave Symposium (IMS) - Silicon-Micromachined Waveguide Calibration Shims for Terahertz Frequencies
摘要： A new method of realising precision waveguide shims for use in THz Through-Re?ect-Line (TRL) calibrations, based on silicon-micromachining, is introduced. The proposed calibration shims combine a thin λ/4 silicon layer, co-fabricated with a thicker layer which provides mechanical support. This design overcomes the limitations of CNC milling for the creation of calibration shims, facilitating use of standard TRL calibration at currently challenging frequencies. The novel shim ?ts inside the inner recess of a standard waveguide ?ange and is compatible with conventional ?ange alignment pins. Five micromachined shims were fabricated in a silicon-on-insulator process for operation in the WM-570 waveguide band (325 – 500 GHz). The fabricated shims show excellent performance across the entire band, with return loss in excess of 25 dB, insertion loss below 0.2 dB and high uniformity between samples. Veri?cation reveals that the micromachined shims have an electrical length within 2% of the expected value. Comparative measurements of a DUT calibrated with the proposed shim and a previously un-used conventional metallic shim show that the novel concept offers equivalent, if not better, performance. The mechanical design of the micromachined shim and the rigid nature of silicon ensure that it will not suffer from performance degradation with repeated use, as is problematic with thin metallic shims. This work enables the creation of low-cost, highly-repeatable, trace- able calibration shims with micrometer feature-sizes and high product uniformity, surpassing the limits of current techniques.
关键词： calibration,micromachining,TRL,terahertz,waveguide,THz
更新于2025-09-11 14:15:04
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[IEEE 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Paris, France (2018.7.8-2018.7.13)] 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Improved S-Parameter Measurements of Embedded Planar Transmission-Line on Multi-Layer PCB
摘要： This paper describes improved calibration method for measuring the scattering parameters of an embedded planar transmission line on multi-layer printed circuit board (PCB) substrate from 100 MHz to 40 GHz. When using a Vector Network Analyzer (VNA) to measure the scattering parameters (S-parameters) of printed circuit board (PCB) interconnects, it can be advantageous to include the calibration and verification standards on the same PCB as the interconnects under test. Both designs of on-PCB standards and calibrated results of verification standards are presented.
关键词： TRL calibration,multi-layer PCB,S-parameter measurement,planar transmission-line
更新于2025-09-10 09:29:36
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[IEEE 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Paris, France (2018.7.8-2018.7.13)] 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - On-Wafer CPW Standards for S-Parameter Measurements of Balanced Circuits Up to 40 GHz
摘要： The Multimode Thru-Reflect-Line (TRL) calibration technique is applied to perform mixed-mode scattering parameter measurements of on-wafer differential circuits. The paper describes the design and the realization of coupled coplanar waveguide (CCPW) standards on quartz (SiO2) substrate in the Ground-Signal-Ground-Signal-Ground (GSGSG) configuration. Simulation and measurement results for a mismatched transmission line demonstrate the validity of the method up to 40 GHz.
关键词： Coplanar waveguide,Multimode TRL calibration,vector network analyzer,mixed-mode Scattering parameters,differential circuits,microwave measurements
更新于2025-09-10 09:29:36
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Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz
摘要： Sub-mm circuit design requires accurate on-wafer characterization of passive and active devices. In industry, characterization of these devices is often performed with off-wafer SOLT calibration. In this work, validity of this characterization procedure above 110 GHz is investigated by an exhaustive study of on-wafer and alumina off-wafer calibration using measurement and electromagnetic (EM) simulation up to 500 GHz. The EM simulation is performed at two different levels, first at the intrinsic level of the devices under test for reference and afterward up to the probe level to simulate different standards used in the off-wafer calibration or in the on-wafer calibration in presence of the probe. Further, EM simulation data is calibrated with the same procedures and tools that is used in the measurement; therefore, it includes the probe-to-substrate coupling. In addition, precise EM model of a commercial impedance standard substrate (ISS) is developed and used to perform the SOLT calibration. A good agreement is observed between measurement and EM modelling for the off-wafer calibration as well as for the on-wafer calibration. Results clearly highlights a limitation of alumina off-wafer methodology above 200 GHz for characterization of Silicon based technologies. Finally a discussion is given on the pros and cons of the off-wafer and on-wafer methodologies.
关键词： probe station,calibration,S-parameter measurement,TRL,THz,SiGe HBT,on-wafer,500 GHz,SOLT
更新于2025-09-04 15:30:14