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Investigation of optical fiber-tip probes for common and ultrafast SERS
摘要： In this study, we performed a three-dimensional computational experiment on ultrashort pulse propagation in an optical fiber-tip probe that is decorated with gold nanoparticles (NPs) using a constant structure for the probe’s dielectric taper and different spatial configurations of the gold nanoparticles. Interestingly, a hot spot with the highest amplitude of the electric field was found not along the same chain of the NPs but between terminal NPs of neighboring chains of NPs at the probe’s tip (the amplitude of the electric field in the hot spots between the NPs along the same chain was of the order of 101, while that between terminal NPs of neighboring chains was of the order of 103). We eventually identified a configuration with only six terminal nanoparticles (Config4) which is characterized by the highest electric field amplitude enhancement and can provide the highest spatial resolution in the SERS interrogation of an object of interest. The ultrashort temporal responses of the hot spots for all configurations exhibited relatively high pulse elongation (relative elongation was greater than 4.3%). At the same time, due to the reflection of the incident pulse and consequent interference, the temporal responses of most hot spots contained several peaks for all configurations except for the optimum Config4. Nonetheless, the ultrashort temporal responses of all hot spots for Config4 were characterized by a single peak but with a relatively large pulse elongation (relative elongation was 234.1%). The results indicate that further examination of this new structure of a nanoparticles-coated optical fiber-tip probe with only six terminal NPs may provide attractive characteristics for its practical applications.
关键词： gold nanoparticles,femtosecond pulse,optical fiber-tip probe,ultrafast nanophotonics.,surface-enhanced Raman spectroscopy,temporal response
更新于2025-09-23 15:19:57
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Surface modification of AlN using organic molecular layer for improved deep UV photodetector performance
摘要： Direct wide bandgap of 6.2 eV, high temperature robustness and radiation hardness make aluminum nitride (AlN) a preferable semiconductor for deep ultraviolet (UV) photodetection. However, the performance and reliability of AlN- based devices is adversely affected by a large density of surface states present in AlN. In this work, we have investigated the potential of a monolayer of organic molecules in passivating the surface states of AlN which improved the performance of AlN- based metal- semiconductor- metal (MSM) deep UV photodetectors. The organic molecules of Meso-5,10,15-triphenyl-20-(p-hydroxyphenyl)porphyrin Zn(II) complex (ZnTPP(OH)) were successfully adsorbed on AlN surface, forming a self- assembled monolayer (SAM). The molecular layer was characterized by contact angle measurement, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The surface modification of AlN effectively reduced dark current of the photodetector by ten times without degrading the magnitude of photo current, especially at low voltages. Photo to dark current ratio (PDCR) was enhanced from 930 to 7835 at -2V and the responsivity doubled from 0.3 mA/W to 0.6 mA/W at 5V. Moreover, the rise and fall times of the detector were found to decrease after the surface modification process. Our results suggest that SAM of porphyrin molecules effectively passivated the surface states in AlN which resulted in improved photodetector performance.
关键词： Dark current,PDCR,MSM UV photodetector,Surface states,SAM,Responsivity,Temporal response
更新于2025-09-23 15:19:57
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Improved spectral and temporal response of MSM photodetectors fabricated on MOCVD grown spontaneous AlGaAs superlattice
摘要： A co-planar metal-semiconductor-metal nonsymmetrical back to back Schottky diode photodetector using natural superlattice AlGaAs grown by metalorganic vapor phase epitaxy on GaAs (100) has been reported. The detection efficiency and photoresponse of the superlattice based device are found significantly superior compared to the one based on high temperature annealed homogeneous AlGaAs. Under a forward bias of 1 V, the peak values of responsivity, detectivity and sensitivity were 10.133 mA/W, 7.6 × 1011 cmHz1/2W?1, 81.06 cm2/W for the device with as-grown natural superlattice and 1.14 mA/W, 7.05 × 1010 cmHz1/2W?1, 2.82 cm2/W for the device with homogeneous composition of AlGaAs, respectively. Besides, the device with natural superlattice structure showed much faster response to the pulsed light with rise and decay time of 560 μs and 1 ms as compared to 2 and 7 ms, respectively for the device with disordered bulk AlGaAs. The superior spectral and temporal characteristics of the device are explained by a model based on a third diode representing the net effect due to the superlattice modulations along with two Schottky diodes at the metal-semiconductor junctions. The third barrier, which is basically due to the periodic modulation in aluminium composition, plays an important role in enhancement of the photocurrent owing to the activation of the superlattice channels under light while keeping the dark current small. The fast sweeping of the photogenerated carries by the intrinsic electric field at the heterointerfaces in the active semiconducting layer makes the characteristic times of the device with the superlattice structures much smaller than one with homogeneous AlGaAs. Degradation in photoresponse and speed is attributed to the interdiffusion as an effect of thermal annealing.
关键词： AlGaAs/GaAs,Spectral response,Metal-semiconductor-metal photodetector,Natural superlattice,Temporal response
更新于2025-09-12 10:27:22