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Deposition and Determination of Band Alignment of Al2O3/Si Gate Stacks by New CVD Chemistry
摘要： Compared to other precursors, dimethyl aluminum hydride [(CH3)2AlH] has high vapor pressure of 2 torr at room temperature and a potential to form alumina films by CVD/ALD with low carbon impurity. Additionally, low deposition temperature of dimethyl aluminum hydride will avoid the formation of low-k interfacial layer during deposition, which is suitable for the MOS device fabrication. In this study, Al2O3 thin films have been deposited successfully from dimethyl aluminum hydride and O2 to investigate the MOCVD behaviour as well as the observation of the band alignment of deposited Al2O3/Si gate stacks.
关键词： Precursor,High-k gate dielectrics,Band alignment,Thermal stability
更新于2025-09-04 15:30:14
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Synthesis and luminescence properties of Eu3+-doped a novel double perovskite Sr2YTaO6 phosphor
摘要： A novel Sr2Y1?xTaO6:xEu3+ (x = 0.04–0.20) red-emitting phosphor was synthesized by using the conventional solid-state reaction method. The crystal structure, photoluminescence properties, thermal stability and decay lifetimes were investigated in detail. Upon near UV light excitation, this sample exhibited a strong red emission peak centered at 612?nm due to 5D0 → 7F2, which indicated that Eu3+ occupies low symmetry sites within the Sr2YTaO6 host lattice. The optimized doping concentration of Eu3+ ion is about 12?mol%. The excellent thermal stability of Sr2YTaO6:Eu3+ phosphor was tested according to the temperature dependent emission spectra. In addition, the Sr2Y1?xEuxTaO6 phosphors exhibited good color coordinate (0.6076, 0.3879) and high color purity about 84.55%. All results indicated that the Sr2Y1?xTaO6:xEu3+ phosphors can serve as an efficient red phosphor in the white light emitting diodes.
关键词： Sr2YTaO6:Eu3+,phosphor,luminescence,thermal stability,white light emitting diodes
更新于2025-09-04 15:30:14