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Perovskite Quantum Dots Exhibiting Strong Hole Extraction Capability for Efficient Inorganic Thin Film Solar Cells
摘要： Inorganic semiconductor Sb2(S,Se)3 possesses a suitable bandgap, environmentally benign elemental composition, and excellent stability, offering ample promise for next-generation low-cost solar cells. Here, we demonstrate that perovskite quantum dots (QDs), including CH3NH3PbBr3 and CsPbBr3, can serve as highly efficient and air-stable hole extraction materials in Sb2(S,Se)3 solar cells. Through a proper pre-treatment of the colloidal QDs, a 25-nm-thick QD film can be obtained with excellent uniformity and charge transport properties. Spectroscopic and photoelectrochemical analysis show that perovskite QDs can effectively extract holes from Sb2(S,Se)3 with suppressed carrier recombination. The perovskite QDs/Sb2(S,Se)3 heterojunction also establishes an increased built-in potential so that open-circuit voltage is pronouncedly enhanced. Finally, the device based on perovskite QDs/Sb2(S,Se)3 heterojunction boosts the efficiency from 4.43% to 7.82%, setting a record value, to the best of our knowledge, in Sb2(S,Se)3 solar cells. Our research manifests another application of perovskite materials and practical strategy toward efficiency improvement of Sb2(S,Se)3 solar cells.
关键词： efficiency improvement,inorganic thin film solar cells,Perovskite quantum dots,Sb2(S,Se)3,hole extraction
更新于2025-09-12 10:27:22
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Modeling Thin Film Solar Cells: From Organic to Perovskite
摘要： Device model simulation is one of the primary tools for modeling thin film solar cells from organic materials to organic–inorganic perovskite materials. By directly connecting the current density–voltage (J–V) curves to the underlying device physics, it is helpful in revealing the working mechanism of the heatedly discussed organic–inorganic hybrid perovskite solar cells. Some distinctive optoelectronic features need more phenomenological models and accurate simulations. Herein, the application of the device model method in the simulation of organic and organic–inorganic perovskite solar cells is reviewed. To this end, the ways of the device model are elucidated by discussing the metal–insulator–metal picture and the equations describing the physics. Next, the simulations on J–V curves of organic solar cells are given in the presence of the space charge, interface, charge injection, traps, or exciton. In the perovskite section, the effects of trap states, direct band recombination, surface recombination, and ion migration on the device performance are systematically discussed from the perspective of the device model simulation. Suggestions for designing perovskite devices with better performance are also given.
关键词： perovskites,device models,thin film solar cells,organic semiconductors
更新于2025-09-12 10:27:22
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Limit of Incorporating Cesium Cations into Formamidinium-Methylammonium Based Mixed Halide Perovskite Solar Cells
摘要： Cesium (Cs) makes perovskite robust in terms of thermodynamic stability as well. We explore the means of incorporating Cs into a base perovskite of mixed cation (FA/MA) and mixed halide (I/Br) that has a proven track record of high performance through inter-diffusion approach. With this approach, it has been shown that perovskites form a smooth film without any residual PbI2 and exhibit higher absorbance. Though the residual PbI2 disappeared with the increase in added Cs, the film morphology became rough for Cs concentration higher than 15%. Addition of small amounts of PbCl2 allowed inclusion of more Cs content, which resulted in smooth film surface and further improved device performance.
关键词： mixed-cations,Cs-incorporation,thin-film solar cells,inter-diffusion,two-step process,Perovskite
更新于2025-09-12 10:27:22
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Physics of Energy Conversion () || 10. Photovoltaic energy conversion
摘要： In a photovoltaic device, solar energy is converted into electricity along a path very different from the one taken in a solarthermal power plant. Here, in a first step the energy of the solar photons is converted into chemical energy in a solid state absorber. This means that the absorber is brought into an electronically excited state involving a reconfiguration of its charge carriers by the generation of electron/hole (e?/h+)-pairs, i.e. by the following reaction: Ground state + ?? → e? + h+. Here, ?? represents a photon with sufficient energy to bring an electron to the excited state. The chemical energy of the charge carrier ensembles in the conduction and valence bands is then converted into electrical energy by spatially separating the e?/h+-pairs via electrical contacts of the absorber which are electron or hole selective, respectively. In general such selective contacts can only be realized by a jump in the material properties between the two contacts, an example for this being a pn-junction. Since under illumination electrons and holes have different electrochemical potentials in the absorber material, this separation leads to a voltage drop between the contacts selective for the different charge carrier types. It is thus the selectivity of the contacts that introduces the built-in asymmetry into the solar cell, making it a usable voltage source (see Section 5.2). This basic working principle is true for all types of solar cells, ranging from conventional solar cells built from crystalline silicon (c-Si) over thin film solar cells fabricated from different materials such as, e.g. Cu(In,Ga)Se2 (CIGS) to organic or dye sensitized solar cells, and is schematically shown in Figure 10.1.
关键词： electricity,solid state absorber,solar energy,photovoltaic,pn-junction,dye sensitized solar cells,organic solar cells,CIGS,thin film solar cells,crystalline silicon,electron/hole pairs
更新于2025-09-11 14:15:04
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Antimony‐Doped Tin Oxide as Transparent Back Contact in Cu <sub/>2</sub> ZnSnS <sub/>4</sub> Thin‐Film Solar Cells
摘要： Antimony-doped tin oxide (Sn2O3:Sb, ATO) is investigated as a transparent back contact for Cu2ZnSnS4 (CZTS) thin-film solar cells. The stability of the ATO under different anneal conditions and the effect from ATO on CZTS absorber growth are studied. It is found that ATO directly exposed to sulfurizing anneal atmosphere reacts with S, but when covered by CZTS, it does not deteriorate when annealed at T< 550 °C. The electrical properties of ATO are even found to improve when CZTS is annealed at T= 534 °C. At T= 580 °C, it is found that ATO reacts with S and degrades. Analysis shows repeatedly that ATO affects the absorber growth as large amounts of Sn-S secondary compounds are found on the absorber surfaces. Time-resolved anneal series show that these compounds form early during anneal and evaporate with time to leave pinholes behind. Device performance can be improved by addition of Na prior to annealing. The best CZTS device on ATO back contact herein has an efficiency of 2.6%. As compared with a reference on a Mo back contact, a similar open-circuit voltage and short-circuit current density are achieved, but a lower fill factor is measured.
关键词： antimony-doped tin oxides,sulfurization,thin-film solar cells,transparent back contacts,Cu2ZnSnS4
更新于2025-09-11 14:15:04
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Solution-processed Zn <sub/><i>x</i> </sub> Cd <sub/> 1- <i>x</i> </sub> S Buffer Layers for Vapor Transport Deposited SnS Thin-film Solar Cells: Achieving High Open-circuit Voltage
摘要： As an alternative buffer material to CdS, ZnxCd1-xS buffer layers for vapor-transport-deposited SnS thin-film solar cells (TFSCs) were fabricated using the successive ionic layer adsorption and reaction (SILAR) method. Varying the Zn-to-Cd ratio resulted in a series of ZnxCd1-xS thin films with controllable bandgaps in the range of 2.40–3.65 eV. The influence of the Zn-to-Cd ratio on the cell performance was investigated in detail. The Zn0.34Cd0.66S buffer layer was found to be the optimal composition for SnS TFSCs, and a record open-circuit voltage (Voc) of 0.405 V was achieved with an efficiency of 3.72%, while the SILAR-CdS buffer layer rendered a Voc of 0.324 V. The improvement in Voc when using the Zn0.34Cd0.66S buffer layer was corroborated by the spike-type conduction band offset of 0.35 eV with the SnS absorber, as revealed by X-ray photoelectron spectroscopy analysis. In addition, minimized interfacial recombination at the SnS/Zn0.34Cd0.66S heterojunction was confirmed by temperature-dependent Voc analysis under illuminated conditions.
关键词： open-circuit voltage,successive ionic layer adsorption and reaction,thin-film solar cells,Tin monosulfide,buffer layer,zinc cadmium sulfide
更新于2025-09-11 14:15:04
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Scientific complications and controversies noted in the field of CdS/CdTe thin film solar cells and the way forward for further development
摘要： Cadmium telluride-based solar cell is the most successfully commercialised thin film solar cell today. The laboratory-scale small devices have achieved ~ 22%, and commercial solar panels have reached ~ 18% conversion efficiencies. However, there are various technical complications and some notable scientific contradictions that appear in the scientific literature published since the early 1970s. This review paper discusses some of these major complications and controversies in order to focus future research on issues of material growth and characterisation, post-growth processing, device architectures and interpretation of the results. Although CdTe can be grown using more than 14 different growth techniques, successful commercialisation has been taken place using close-space sublimation and electrodeposition techniques only. The experimental results presented in this review are mainly based on electrodeposition. Historical trends of research and commercial successes have also been discussed compared to the timeline of novel breakthroughs in this field. Deeper understanding of these issues may lead to further increase in conversion efficiencies of this solar cell. Some novel ideas for further development of thin film solar cells are also discussed towards the end of this paper.
关键词： Scientific complications,CdS/CdTe thin film solar cells,Development,Controversies
更新于2025-09-11 14:15:04
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Numerical Optimization of 0.5‐μm‐thick Cu (In1-xGax) Se2 Solar Cell
摘要： This paper presents a numerical simulation of 2D ultra-thin Cu (In1-xGax) Se2 solar cell under drift-diffusion transport across heterojunction interfaces. The validation of the CIGS model is performed by matching the electrical characteristics of the experimental and simulation results. The surface recombination velocity of CdS/CIGS heterojunction interface and element composition Ga/(In+Ga) ratio effect on the optical properties and electrical performances of CIGS absorber are investigated. The thickness dependence and carrier concentration of the semiconductor layers on the cell performance are investigated. The nanostructured Ag, Au, or Cu back mirror is used to replace conventional Mo back contact to improve light absorption in the ultra-thin CIGS layer. Best power conversion efficiency of 21.74 % has been obtained with a thinner absorber of about 0.5‐ μm‐ thick under AM1.5 illumination condition, 300K.
关键词： Efficiency,Ultra-thin film solar cells,Heterostructure,Nanostructured back mirror,TCAD
更新于2025-09-11 14:15:04
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Copper Chalcopyrites for Solar Energy Applications
摘要： Solar photovoltaic (PV) technology is a reliable and environmental friendly alternative for electricity generation. There are a number of solar PV technologies at different maturity levels, ranging from well-established and commercialized silicon PV to still in conceptual and R&D phase quantum dot and organic/polymer solar cells. Chalcopyrite solar cells, named so because of the thin absorber layer of Cu-based chalcopyrite materials used in these cells, are one of the frontrunners in thin-film PV technology owing to their tunable direct bandgap, large absorption coefficient and long-term stability. Among all Cu-chalcopyrite materials, copper indium selenide (CISe) and copper indium gallium selenide (CIGSe) are most suitable for use as light-absorbing layer. Although CISe and CIGSe absorber-based PV modules are being produced commercially for several years now, the technology is yet to mature fully as there is still scope for improvement in efficiency, manufacturability and cost reduction. The present article discusses the status of CISe-/CIGSe-based thin-film PV technology while primarily focusing on the absorber material. Different vacuum and non-vacuum methods for fabricating these materials are reviewed along with their merits/demerits and suitability to large-scale production. Current status of commercial maturity for CIGSe PV is discussed while providing general process details of selected industrial manufacturers. Existing bottlenecks for this technology are deliberated, and future directions for improvement in laboratory-scale efficiency and manufacturability are outlined.
关键词： Thin-film solar cells,Chalcopyrite,Copper indium gallium selenide,Copper indium selenide
更新于2025-09-10 09:29:36
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Properties of Co‐Evaporated RbInSe <sub/>2</sub> Thin Films
摘要： The formation of an Rb-containing In-Se compound at the surface of Cu(In, Ga)Se2 (CIGS) thin films is assumed to be part of the mechanism of RbF post-deposition treatments (PDTs) performed on these absorber layers. Alkali-PDTs have acquired attention lately as they significantly enhance the efficiency of CIGS solar cells. In this contribution the formation of various phases during the RbF-PDT has been investigated. The results indicate that RbInSe2 is the most probable phase to form. Combining theoretical and experimental investigations, fundamental properties of a thermally co-evaporated RbInSe2 thin film are reported in order to serve as reference values in further studies.
关键词： CIGSe thin film solar cells,crystal structure,RbInSe2 deposition,defect calculation,electronic structure
更新于2025-09-04 15:30:14