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Effect of defects and secondary phases in Cu2ZnSnS4 absorber material on the performance of Zn(O,S) buffered devices
摘要： Copper zinc tin sulfide (CZTS) absorber layer attracts so much attention in photovoltaic industry since it contains earth abundant, low cost and non-toxic elements contrary to other chalcogenide based solar cells. In the present work, CZTS absorber layers were prepared following a two-stage process: firstly, a stack of metal precursors (Copper (Cu) / Tin (Sn) / Zinc (Zn) / Copper (Cu)) were deposited on molybdenum (Mo) substrate by magnetron sputtering, then this stack was annealed under S atmosphere inside a tubular furnace. CZTS thin films were investigated using energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The effect of sulfurization time and the thickness of top and bottom Cu layer in precursors on the properties of CZTS thin films were investigated. The importance of Cu thickness adjacent to Sn to avoid detrimental phases was addressed. The significance of sulfurization time to restrict the Sn and Zn losses, formation of oxides such as tin dioxide and zinc oxide, and formation of molybdenum disulfide and voids between Mo/CZTS interface was also addressed. Moreover, cadmium sulfide buffer layer, which is conventionally used in CZTS solar cells, is replaced by an environmentally friendly alternative zinc oxysulfide buffer layer.
关键词： Magnetron sputtering,Zinc oxysulfide,Copper zinc tin sulfide,buffer layer,absorber layer
更新于2025-09-09 09:28:46
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Synergistic Effect of the Electronic Structure and Defect Formation Enhances Photocatalytic Efficiency of Gallium Tin Oxide Nanocrystals
摘要： The design of photocatalysts with enhanced efficiency is pivotal to sustainable environmental remediation and renewable energy technologies. Simultaneous optimization of different factors affecting the performance of a photocatalyst, including the density of active surface sites, charge carrier separation, and valence and conduction band redox potentials, remains challenging. Here we report the synthesis of ternary gallium tin oxide (GTO) nanocrystals with variable composition, and investigate the role of Ga3+ dopants in altering the electronic structure of rutile-type SnO2 nanocrystal lattice using steady-state and time-resolved photoluminescence spectroscopies. Substitutional incorporation of Ga3+ increases the band gap of SnO2 nanocrystals, imparting the reducing power to the conduction band electrons, and causes the formation of acceptor states, which, in conjunction with electron trapping by donors (oxygen vacancies), leads to stabilization of the photoexcited carriers. Combination of a decrease in the charge recombination rate and adjustment of the conduction band reduction potential to more negative values synergistically promote the photocatalytic efficiency of the GTO nanocrystals. The apparent rate constant for the photocatalytic degradation of rhodamine-590 dye by optimally prepared GTO NCs is 0.39 min-1, more than two times greater than that by benchmark Aeroxide TiO2 P25 photocatalyst. The results of this work highlight the concept of using rational aliovalent doping of judiciously chosen metal oxide nanocrystal lattices to simultaneously manipulate multiple photocatalytic parameters, enabling the design of versatile and highly efficient photocatalysts.
关键词： photocatalysts,photocatalytic efficiency,nanocrystals,electronic structure,gallium tin oxide,defect formation
更新于2025-09-09 09:28:46
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Deposition Time Dependent Properties of Copper Tin Telluride (Cu <sub/>2</sub> SnTe <sub/>3</sub> ) Nanoparticles for Solar Absorber Applications
摘要： We report the growth of copper tin telluride nanoparticles as an absorber layer using a chemical bath deposition (CBD) process for solar selective applications. The XRD results showed the phase of Cu2SnTe3 with a cubical structure. The larger-sized nanoparticles resulted with increased absorption properties and the optical band gap ranging from 1.93, 1.90, 1.58 and 1.56 eV for deposition times of 20–120 min, respectively. Then, the electrical properties of Cu2SnTe3 nanoparticles were also provided a higher current (～6–8 mA) with bias potential of zero.
关键词： Selective Solar Absorber,Nanoparticles,Copper Tin Telluride,Chemical Bath Deposition
更新于2025-09-09 09:28:46
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Thermal atomic layer deposition of Sn metal using SnCl <sub/>4</sub> and a vapor phase silyl dihydropyrazine reducing agent
摘要： This work explores a novel, thermal atomic layer deposition (ALD) process to deposit tin metal at a low temperature. The authors employ 1,4-bis(trimethylsilyl)-1,4-dihydropyrazine (DHP) to reduce SnCl4 on silicon substrates. The authors explored a range of temperatures between 130 and 210 °C to determine the ALD window, which was found to be 170–210 °C. The authors show that this process yields a growth rate of ～0.3 ? per cycle at 190 °C. Furthermore, X-ray photoelectron spectroscopy results showed that the ?lm impurities are reduced for depositions within the ALD window. The reaction mechanism was explored using in situ mass spectrometry and in situ quartz crystal microbalance (QCM). Within the ALD temperature window, the QCM results showed a saturated mass gain during the SnCl4 exposure and a net mass loss during the DHP dose. Consistent with the QCM results, in situ mass spectroscopy data indicate that the DHP exposure step removes surface Cl via formation of volatile trimethylsilyl chloride and pyrazine by-products, effectively reducing the oxidation state of surface-bound Sn. This work is the ?rst thermal Sn metal ALD process to be reported in literature and the oxidation/reduction chemistry presented here may be applied to other metal precursors, increasing the applicability of metal ALD use in industry.
关键词： quartz crystal microbalance,X-ray photoelectron spectroscopy,ALD window,SnCl4,mass spectrometry,tin metal,thermal atomic layer deposition,DHP
更新于2025-09-04 15:30:14
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Numerical Investigation for Scale-Up of an Electron Cyclotron Resonance Plasma for Fluorine-Doped Tin Oxide Thin Film Production
摘要： A low-temperature process is required to deposit ?uorine doped tin oxide (FTO) as a transparent conductive oxide on polyethylene terephthalate (PET) substrate, as the latter is polymeric and has a low melting point. An electron cyclotron resonance (ECR) plasma system is the best way to deposit metal oxide with high transparency and electrical conductivity at temperatures below 100 (cid:2)C. Characteristics of an ECR plasma include its high ionization energy and electron density; however, its use is limited in large-scale deposition. In order to overcome this limitation, a large-scale ECR plasma system with a dual microwave generator was designed by numerical investigation of a laboratory-scale ECR plasma system. FTO ?lms prepared in the laboratory-scale and large-scale systems were compared. The change in electrical resistivity and optical transmittance with deposition pressure in the large-scale ECR plasma system with dual linear microwave generator is similar to that observed in the laboratory-scale ECR plasma system. The velocity distribution of active species near the substrate in the large-scale ECR plasma system showed a very similar pattern to that in the laboratory-scale ECR plasma system over a range of 1.5 × 10?2 to 0.8 × 10?2 m/s. The electrical resistivity and optical transmittance of FTO ?lms deposited by a large-scale ECR plasma system using a dual microwave generator had respective values of 4.3 × 10?3 ～ 9.18 × 10?3 (cid:2) · cm and 86.5～88.2%.
关键词： Dual Microwave,ECR Plasma,Electrical Resistivity,Optical Transmittance,Fluorine-Doped Tin Oxide
更新于2025-09-04 15:30:14
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Electrochromic effect of indium tin oxide in lithium iron phosphate battery cathodes for state of charge determination
摘要： In this paper, we discuss the origin of an optical effect in lithium iron phosphate (LFP) battery cathodes, which depends on the electrical charge transferred into the battery. Utilizing indium tin oxide (ITO) as an electrode additive, we were able to observe a change in reflectivity of the cathode during charging and discharging with lithiation and delithiation being clearly visible in the form of lithiation fronts. Further investigations using in situ video microscopy and in situ Raman spectroscopy on test cells with an optical window indicates that ITO additionally acts as an electrochromic marker within the LFP cathode. This enhances the optical effect due to local potentials around the lithiation fronts, which enables the voltage-dependent reflectivity of the ITO to be visible in the LFP cathode. Structural analysis with scanning electron microscopy (SEM) and X-ray crystallography (XRD) are presented as well. The observed effect allows for novel battery research methods and for a possible commercial application as a sensor for state of charge (SOC) estimation similar to the optical fiber approach reported by Ghannoum et al. for a graphite anode.
关键词： lithium ion batteries,battery state determination,lithium iron phosphate,raman spectroscopy,indium tin oxide,electrochromic marker,video microscopy,state of charge
更新于2025-09-04 15:30:14
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Enhanced etching of tin-doped indium oxide due to surface modification by hydrogen ion injection
摘要： It is known that the etching yield (i.e., sputtering yield) of tin-doped indium oxide (ITO) by hydrocarbon ions (CHx+) is higher than its corresponding physical sputtering yield [H. Li et al., J. Vac. Sci. Technol. A 33, 060606 (2015)]. In this study, the effects of hydrogen in the incident hydrocarbon ion beam on the etching yield of ITO have been examined experimentally and theoretically with the use of a mass-selected ion beam system and by first-principles quantum mechanical (QM) simulation. As in the case of ZnO [H. Li et al., J. Vac. Sci. Technol. A 35, 05C303 (2017)], mass-selected ion beam experiments have shown that the physical sputtering yield of ITO by chemically inert Ne ions increases after a pretreatment of the ITO film by energetic hydrogen ion injection. First-principles QM simulation of the interaction of In2O3 with hydrogen atoms shows that hydrogen atoms embedded in In2O3 readily form hydroxyl (OH) groups and weaken or break In–O bonds around the hydrogen atoms, making the In2O3 film less resistant to physical sputtering. This is consistent with experimental observation of the enhanced etching yields of ITO by CHx+ ions, considering the fact that hydrogen atoms of the incident CHx+ ions are embedded into ITO during the etching process.
关键词： quantum mechanical simulation,sputtering yield,tin-doped indium oxide,hydrogen ion injection,physical sputtering,ITO,etching yield,In2O3,hydrocarbon ions,hydroxyl groups
更新于2025-09-04 15:30:14