- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Integral Characteristics of Wave Packets in the Problem of the Evolution of A Wave Function on A One-Dimensional Lattice
摘要： We consider the quantum dynamics of charge transfer on a lattice in the tight-binding approximation and analytically calculate the integral characteristics of the wave packet propagating along the lattice. We focus on calculating the mean and root-mean-square displacements. We also obtain expressions for higher-order moments as series for squares of Bessel functions, which might be independently interesting.
关键词： moments of distribution function,quantum dynamics,tight-binding approximation
更新于2025-09-23 15:22:29
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Counterpropagating continuous-variable entangled states in lossy coupled-cavity optical waveguides
摘要： We present an integrated source of counterpropagating entangled states based on a coupled resonator optical waveguide that is pumped by a classical pulsed source incident from above the waveguide. We investigate theoretically the generation and propagation of continuous-variable entangled states in this coupled-cavity system in the presence of intrinsic loss. Using a tight-binding approximation, we derive analytic time-dependent expressions for the number of photons in each cavity, as well as for the correlation variance between the photons in different pairs of cavities, to evaluate the degree of quantum entanglement. We also derive simple approximate expressions for these quantities that can be used to guide the design of such systems, and discuss how pumping configurations and physical properties of the system affect the photon statistics and the degree of quantum correlation.
关键词： quantum entanglement,lossy coupled-cavity optical waveguides,continuous-variable entangled states,counterpropagating,tight-binding approximation
更新于2025-09-11 14:15:04
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I–V characteristics and conductance of strained SWCNTs
摘要： We present a new procedure to investigate the I–V characteristics and the conductance for strained SWCNTs. These electronic transport properties have been studied theoretically at zero temperature for zig-zag, armchair and chiral SWCNTs under the effect of the uniaxial tension and torsional strain. The analytical expression of the energy spectrum in the tight binding approximation has been used to calculate the induced current and the conductance through Landauer–Büttiker formalism. It is shown that the conductance for unstrained CNTs at initial values of the voltage can take discrete values which are equal to zero and 4 (e2/h) for semiconducting and conducting SWCNTs respectively. The emergence of the kinks in the I–V characteristics is due to the discrete electronic spectrum in the SWCNTs. The location and number of kinks are changeable under the effect of strain process. The conductance in a strained armchair (5, 5) CNT decreases to zero under torsional strain, consequently, it will transform the conducting SWCNTs at a threshold value of strain to a semiconducting SWCNT. In contrast, by applying the uniaxial tension on the armchair (5, 5) CNT, the conductance does not change absolutely. There is a different behavior can be observed by applying the strain on zig-zag (10, 0) CNT, where the conductance decreases rapidly and slightly under the in?uence of uniaxial tension and torsional strain, respectively. We found that the conductance of chiral (10, 9) CNT is not signi?cantly affected by applying the strain under consideration. More interestingly, the band structure of chiral (10, 9) CNT under uniaxial tension and torsional strain have been investigated within the tight binding approximation.
关键词： I–V characteristics,Mechanical strain,Tight binding approximation,SWCNT,Conductance
更新于2025-09-10 09:29:36