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(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN
摘要： The main results of a complete study by Transmission and Scanning-Transmission Electron Microscopies ((S)TEM) are described for (i) InGaN/Si (111) heterostructures in the whole compositional range of the alloys, and (ii) InN quantum dots (InN QDs) directly grown on Si wafers or on relatively rough InGaN/Si (111) templates. The combination of many (S)TEM-based techniques allowed to evaluate different characteristics of the systems under study: (InN QD/) InGaN/Si and InN QD/Si interfaces and crystal qualities, structural and chemical imperfections and other important features. InxGa1-xN thin films are often identified as single-crystalline, very homogeneous in composition, and mostly wurtzite-type, remarkably at any value of x. Also, (S)TEM techniques revealed that the InN nanostructures were hexagonal single crystals, mostly epitaxial to the supporting lattice. The InN crystals also exhibited partially cubic arrangements when allocated onto In-rich InxGa1-xN (i.e. x > 0.7).
关键词： Semiconductors,TEM,Heterojunctions,Crystal structure.,Nitride materials,Crystal growth,Transmission Electron Microscopy
更新于2025-09-23 15:23:52
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A structure-simplified and cost-effective coherent receiver for high splitting downstream transmission in next-generation PONs
摘要： In this paper we demonstrate a structure-simplified and cost-effective coherent receiver scheme for high splitting downstream transmission in next generation passive optical networks (NG-PONs). In such scheme, the simple 3dB coupler is used to replace 90° optical hybrid and the electrical local oscillator (LO) is utilized to down-convert signal, and there by only one balanced photodiode (BPD) is required for each polarization. Hence the cost is reduced effectively for the high splitting PON downstream transmission scenario. The comprehensive numerical simulation results show that the receiver sensitivity for both 14G Baud PM-QPSK and PM-16QAM system is comparable to that of the conventional coherent receiver using 90° hybrid. Furthermore, the effect of fiber nonlinearity on maximum power budget performance is investigated. In addition, the high receiver sensitivity of the scheme is also experimentally validated for PM-QPSK and PM-16QAM system under the scenario of 14G Baud BtB, 20km and 40km standard single-mode fiber (SSMF) transmission. The coexistent advantages of low-cost and high receiver sensitivity make the proposed scheme an attractive candidate for NG-PONs.
关键词： Downstream transmission,NG-PONs,Coherent receiver,Quadrature amplitude modulation
更新于2025-09-23 15:23:52
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Study on Band-Gap Behaviors of 2D Hierarchical Re-Entrant Lattice Structures
摘要： An investigation of Poisson’s ratios and band gap behaviors of 2D hierarchical re-entrant lattice structures is conducted using finite element method (FEM). The structure with a hierarchy order n (n≥1) is constructed by replacing each outmost vertex of the re-entrant octagons of a hierarchical structure of hierarchy order n?1 with a smaller self-similar re-entrant octagon. The dispersion relation and transmission spectrum of the proposed hierarchical structures are analyzed based on the Bloch’s theorem. The effects of geometrical parameters, order of rotational symmetry and orientation angle of some types of re-entrant polygon cores on the lattice Poisson’s ratio and band gap structures are also investigated. Results show that the re-entrant structures with first order hierarchy exhibit a wider band gap and a stronger attenuation effect compared with structures without structural hierarchy. The first order 2D hierarchical re-entrant structure with a negative Poisson’s ratio of ?0.032 exhibits the widest band gap, 17.8% wider than that of the zeroth order 2D re-entrant structure. The order of rotational symmetry and the orientation angle of the re-entrant polygon cores of the lattice have a strong impact on the lattice Poisson’s ratio and band structures.
关键词： re-entrant,negative Poisson’s ratio,band gap,hierarchical structure,transmission spectrum
更新于2025-09-23 15:23:52
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Transmission Low-Frequency Raman Spectroscopy for Quantification of Crystalline Polymorphs in Pharmaceutical Tablets
摘要： The purpose of this study was to quantify polymorphs of active pharmaceutical ingredients in pharmaceutical tablets using a novel transmission low-frequency Raman spectroscopy method. We developed a novel transmission geometry for low-frequency Raman spectroscopy and compared quantitative ability in transmission mode versus backscattering mode using chemometrics. We prepared two series of tablets: 1) containing different weight-based contents of carbamazepine form III and 2) including different ratios of carbamazepine polymorphs (forms I/ III). From the relationship between the contents of carbamazepine form III and partial least squares (PLS) predictions in the tablets, correlation coefficients in transmission mode (R2= 0.98) were found to be higher than in backscattering mode (R2= 0.97). The root mean square error of cross-validation (RMSECV) of the transmission mode was 3.9 compared to 4.9 for the backscattering mode. The tablets containing a mixture of carbamazepine (I/ III) polymorphs were measured by transmission low-frequency Raman spectroscopy, and it was found that the spectral shape changed according to the ratio of polymorphs: the relationship between the actual content and the prediction showed high correlation. These findings indicate that transmission low-frequency Raman spectroscopy possess the potential to complement existing analytical methods for the quantification of polymorphs.
关键词： Transmission,Carbamazepine,Pharmaceutical Tablets,Quantification,Low-Frequency Raman Spectroscopy,THz-Raman,Crystalline Polymorph
更新于2025-09-23 15:23:52
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Measurement of proton quenching in a LAB-based liquid scintillator
摘要： In this paper, we propose a mathematical model to evaluate the transmission of Tuberculosis with drug-resistant strains and with drug-sensitive strains. Based on the epidemic data from Chinese Center for Disease Control and Prevention, we first estimate the values of parameters in the model. Then the basic reproduction number of TB infection in the mainland China is calculated to be 1.0558. Since the basic reproduction number is greater than 1, Tuberculosis spreads as an endemic in mainland China. Through our investigations, the basic reproduction number associated with drug-sensitive strains is less than 1, but the number of individuals infected by drug-resistant strains will still increase quickly, thus the epidemic is not under control. Moreover, increasing the vaccination coverage rate for newborns is not always beneficial for controlling TB prevalence in China. Whether vaccination effect is positive or negative depends on the relapse rate from the recovered state to the infected state. In summary, improving sanitation conditions, introducing efficient measures to detect the disease, and keeping the public informed about how to lower the chance of being infected and the current epidemic situation are essential in slowing down or eliminating Tuberculosis transmission.
关键词： Tuberculosis Transmission,Drug-Sensitive Strain,The Basic Reproduction Number,Drug-Resistant Strain,Least-Square Method
更新于2025-09-23 15:23:52
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Asymmetric strain: A critical role in domain evolution in (111) - Oriented ferroelectric films
摘要： Domain behavior of (111)- oriented perovskite ferroelectric films is significantly different from (001)-/(101)- oriented ones, resulting in enhancing property responses such as a superior susceptibility and a reduced coercive field. However, the domain structures and evolutions with the thickness of (111)-oriented ferroelectric films, which are crucial to further understand the distinctive properties, are still obscure. In this study, the ferroelectric domains of (111)- oriented PbTiO3 films are investigated by transmission electronic microscopy (TEM) and piezoresponse force microscopy (PFM). We identify the domain evolution with the film thicknesses under anisotropic strains imposed by the orthorhombic GdScO3 (101)O substrates. Contrast analysis and electron diffraction patterns reveal that only four ferroelectric variants evolve in PTO films: d2+, d2-, d3+ and d3-, with the polarization directions along [010], [010], [001] and [001], respectively. Two kinds of domain walls are formed: 'inclined' (011) domain walls for d2-/d3+ (d2+/d3-) domains, 'normal' (011) domain walls for d2+/d3- (d2-/d3+) domains. The width of periodically distributed d2+/d3+ (d2-/d3-) domains increases with film thickness following the square root rule. Aberration-corrected scanning transmission electronic microscopy demonstrates the lattice characteristics of domains in (111)- oriented PbTiO3 films are consistent with tetragonal ferroelectric domains. PFM studies reveal that both the out-of-plane and in-plane polarization components of d2-/d3+ (d2+/d3-) domains are non-identical, whereas the d2+/d3+ (d2-/d3-) domains possess uniform out-of-plane polarization component and non-uniform in-plane polarization component. This study discloses the domain structure in (111)-oriented tetragonal ferroelectric films under anisotropic strains and the association with the ferroelectric properties.
关键词： PbTiO3,Transmission electron microscopy,Ferroelectric,T,Perovskites,Piezoresponse force microscopy
更新于2025-09-23 15:23:52
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Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates
摘要： P-type doping using Mg is essential for realizing a variety of electronic and optoelectronic III-nitride devices involving hetero-epitaxial thin films that also contain a significant number of dislocations. We report on the effect of Mg incorporation on dislocation and stress evolution during the growth of GaN thin films by using in situ curvature measurements and ex situ transmission electron microscopy. A complete picture involving the interplay between three effects—dopant size effect, dislocation bending, and polarity inversion—is presented. Mg aids dislocation bending, which in turn generates tensile stresses in Mg-doped GaN films. As a result, the compressive stress expected due to the dopant size difference effect can only be discerned clearly in films with dislocation densities below 5 × 10^9 cm^?2. Polarity inversion at doping exceeding 10^19 cm^?3 is associated with a sharp drop in screw dislocation density. A kinetic stress evolution model has been developed to capture dislocation bending and size difference effects, and a match between calculated bending angle from the model and that measured from TEM images is obtained.
关键词： Mg doping,stress evolution,dislocation bending,in situ curvature measurements,transmission electron microscopy,polarity inversion,GaN
更新于2025-09-23 15:23:52
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Silver Nanostructures on Graphene Oxide as the Substrate for Surface-Enhanced Raman Scattering (SERS)
摘要： Nanosized surface-enhanced Raman scattering (SERS) substrates fabricated by the controlled growth of metal nanostructures on water-dispersed two-dimensional nanomaterials can open a new avenue for SERS analysis of liquid samples in biological fields. In this work, regular and uniform Ag nanostructures were grown on the surface of graphene oxide (GO) through a microwave-assisted hydrothermal method. Polyamidoamine (PAMAM) dendrimers were assembled on the surface of GO to form GO/PAMAM templates for growing Ag nanostructures, which are primarily comprised of Ag dimers and trimers. The prepared Ag/GO nanocomposites are highly dispersed and stable in aqueous solution and may be used as substrates for enhanced Raman detection of rhodamine 6 G (R6G) in aqueous solution. This special substrate provides high-performance SERS and suppresses R6G fluorescence in aqueous solution and is promising as a nanosized material for the enhanced Raman detection of liquid samples in biological diagnostics.
关键词： graphene oxide (GO),Surface-enhanced Raman scattering (SERS),polyamidoamine (PAMAM) dendrimers,transmission electron microscopy (TEM),Fourier transform infrared (FTIR) spectroscopy,rhodamine 6G (R6G)
更新于2025-09-23 15:23:52
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Structural, morphological, composition and optical properties of undoped zinc oxide thin films prepared by spray pyrolysis method: effect of solution concentrations
摘要： The aim of this paper is the study of transparent undoped zinc oxide thin films obtained by spray pyrolysis technique on glass substrates heated at 350 °C from 0.1 to 0.4 mol solution concentrations using zinc acetate dehydrate as precursor. The X-ray diffraction patterns and Raman spectrometry with respect to Urbach energy and wurtzite structure, show that the maximum value of the high frequency intensity E2 and the optimal value of the optical gap are obtained at 0.2 mol concentration. Furthermore, an appropriate transparency is obtained and that makes these films suitable for photovoltaic windows layer cells.
关键词： X-ray diffraction,ultraviolet transmission spectroscopy,Raman spectroscopy,spray pyrolysis,undoped zinc oxide
更新于2025-09-23 15:23:52
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Band structure and optical constants of SnS <sub/>2</sub> single crystals
摘要： Absorption (K), reflection (R) and wavelength modulated transmission (ΔT/Δλ) spectra in SnS2 crystals of hexagonal phase (space group P63/mmc) were investigated in temperature interval from 300 to 10 K. It was established that indirect band gap (Eg ind - 2.403 eV) is due to unpolarized indirect transitions between Γ and M points of Brillouin zone. A minimal direct band gap (Eg dir - 2.623 eV) in E||b polarization is formed by direct allowed transitions and in E⊥b polarization (2.698 eV) by forbidden transitions in Γ point of Brillouin zone. A magnitude of refractive index (n) changes from 3 to 4 and has a maximum at 2.6 eV. Optical functions (n, k, ε1 and ε2) in energy region E > Eg (3 - 6.5 eV) were calculated from measured reflection spectra by Kramers-Kronig analysis. Features observed in reflection and optical function spectra were assigned to electron transitions. This electron transitions were localized in framework of theoretically calculated band structure.
关键词： optical functions,electronic band structure,layered SnS2 crystals,absorption, reflection and transmission spectra
更新于2025-09-23 15:23:52