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Electroresistance of Pt/BaTiO<sub>3</sub>/LaNiO<sub>3</sub> ferroelectric tunnel junctions and its dependence on BaTiO<sub>3</sub> thickness
摘要： Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention due to their great potential in next generation non-volatile memories. In this work, we report on thickness-dependent tunneling electroresistance (TER) and corresponding evolution of transport behavior in Pt/BaTiO3/LaNiO3 FTJs with various BaTiO3 thicknesses of 2.0, 3.2, and 4.8 nm. The TER effect is observed in the 3.2 nm-thick Pt/BaTiO3/LaNiO3 tunnel junction and an ON/OFF current ratio of ~170 is achieved due to the modulation of barrier height by polarization reversal. When the BaTiO3 is increased to 4.8 nm in thickness, the ferroelectric-modulation of the barrier profile becomes more pronounced and the dominant transport mechanism changes from electron tunneling to thermally-activated thermionic injection. As a result, the OFF state current is significantly reduced due to the suppression of the Fowler-Nordheim tunneling with increased width and height of the BaTiO3 barrier. A greatly improved ON/OFF current ratio of ~12500 is thus achieved in the 4.8 nm-thick Pt/BaTiO3/LaNiO3 FTJ device. These results facilitate deeper understanding of the TER effects from the viewpoint of not only the barrier profile but also the transport mechanism.
关键词： Pulsed laser deposition,Ferroelectric tunnel junctions,Ferroelectric memory,Resistive switching
更新于2025-09-23 15:23:52
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Light-Field Imaging for Plasma Wind-Tunnel Application
摘要： Limited optical access and high apparatus complexity are the main challenges for true three-dimensional (3-D) measurements in high-enthalpy plasma flows. However, with the advent of plenoptic cameras, the one-shot and single-camera acquisition of light-field data has become possible, enabling the 3-D analysis of complex scenes with one single optical access and one single exposure. So far, this technique has mostly been applied to problems containing opaque objects or particle-loaded flows. In this paper, approaches to explore the potential of light-field analysis for the 3-D investigation of brightly luminous, high-velocity plasma flows are presented. Using gas flames from a solder torch, the feasibility of plenoptic imaging of optically thin scenes is shown. The complete structure of the flame is derived from a single exposure. The transition of this approach to plasma-flow visualization is shown with very first acquisitions of a plasma freejet, including spectral filters for the measurement of the atomic oxygen distribution.
关键词： high-enthalpy flows,light-field imaging,plasma wind tunnel,plenoptic camera,3-D reconstruction
更新于2025-09-23 15:22:29
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Phonon-assisted tunneling in direct-bandgap semiconductors
摘要： In tunnel ?eld-effect transistors, trap-assisted tunneling (TAT) is one of the probable causes for degraded subthreshold swing. The accurate quantum-mechanical (QM) assessment of TAT currents also requires a QM treatment of phonon-assisted tunneling (PAT) currents. Therefore, we present a multi-band PAT current formalism within the framework of the quantum transmitting boundary method. An envelope function approximation is used to construct the electron-phonon coupling terms corresponding to local Fr?hlich-based phonon-assisted inter-band tunneling in direct-bandgap III-V semiconductors. The PAT current density is studied in up to 100 nm long and 20 nm wide p-n diodes with the 2- and 15-band material description of our formalism. We observe an inef?cient electron-phonon coupling across the tunneling junction. We further demonstrate the dependence of PAT currents on the device length, for our non-self-consistent formalism which neglects changes in the electron distribution function caused by the electron-phonon coupling. Finally, we discuss the differences in doping dependence between direct band-to-band tunneling and PAT current.
关键词： phonon-assisted tunneling,quantum-mechanical modeling,tunnel ?eld-effect transistors,electron-phonon coupling,direct-bandgap semiconductors
更新于2025-09-23 15:22:29
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Rydberg-state ionization dynamics and tunnel ionization rates in strong electric fields
摘要： Tunnel ionization rates of triplet Rydberg states in helium with principal quantum numbers close to 37 have been measured in electric fields at the classical ionization threshold of ～197 V/cm. The measurements were performed in the time domain by combining high-resolution continuous-wave laser photoexcitation and pulsed electric field ionization. The observed tunnel ionization rates range from 105 to 107 s?1 and have, together with the measured atomic energy-level structure in the corresponding electric fields, been compared to the results of calculations of the eigenvalues of the Hamiltonian matrix describing the atoms in the presence of the fields to which complex absorbing potentials have been introduced. The comparison of the measured tunnel ionization rates with the results of these, and additional calculations for hydrogenlike Rydberg states performed using semiempirical methods, have allowed the accuracy of these methods of calculation to be tested. For the particular eigenstates studied the measured ionization rates are ～5 times larger than those obtained from semiempirical expressions.
关键词： Rydberg states,tunnel ionization,electric field ionization,complex absorbing potentials,helium
更新于2025-09-23 15:22:29
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A Global Perspective for Sustainable Highway Tunnel Lighting Regulations: Greater Road Safety with a Lower Environmental Impact
摘要： Tunnel lighting installations function 24 h a day, 365 days a year. These infrastructures have increased exponentially and now connect quite distant locations, even on different continents. This has led European administrations and international regulatory bodies to establish regulations for tunnel safety with the lowest environmental impact. However, until now, these regulations have almost exclusively focused on traffic safety, and relegated sustainability to the background. Even though they recognize the need to reduce energy consumption, they do not propose any tools for doing so. Given the impact of these installations and the lack of a specific regulatory framework, Asian countries will soon be forced either to update previous standards for tunnel lighting or elaborate new ones. A better understanding of the weaknesses of European regulations combined with a willingness to embrace innovation could position Asia as a world leader in the regulation of more sustainable road tunnels. The objective of this research was to improve the sustainability of tunnel lighting installations through new regulations or amendments to existing ones, without impairing the mental well-being of users, who could potentially be affected by energy-saving measures. Accordingly, this paper presents and analyzes a broad proposal for formulating tunnel lighting regulations. The originality of this proposal lies in the fact that it integrates road safety, lower environmental impact, and user well-being. Furthermore, it is expected to broaden the perspective of regulatory bodies and public administrations with regard to tunnel installations, which would ultimately enhance their sustainability.
关键词： driver well-being,sustainability,public perception,tunnel safety,environmental impacts
更新于2025-09-23 15:22:29
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HIFiRE-5 Boundary-Layer Transition Measured in a Mach-6 Quiet Tunnel with Infrared Thermography
摘要： The principal goal of the Hypersonic International Flight Research Experimentation (HIFiRE) flight 5 is to measure hypersonic boundary-layer transition on a three-dimensional body. This paper presents measurements of heat flux and boundary-layer transition in the Boeing/U.S. Air Force Office of Scientific Research Mach-6 Quiet Tunnel. This facility has been developed to provide quiet flow at high Reynolds number, with low noise levels comparable to flight. Previously, the global heat flux and location of the transition front were measured with temperature-sensitive paint (TSP). A new HIFiRE-5 model was built with a polyether ether ketone shell, which is suitable for infrared–thermographic heat-flux measurements. Quiet-flow tests at Reynolds numbers of 8–12 ? 106∕m and zero angle of attack indicate a centerline transition location within 4% of the earlier TSP results, on the order of the uncertainty of the two techniques. This good agreement reinforces confidence in the earlier measurements and the new infrared-based technique. Examination of the off-centerline transition front indicates that the wavelength of stationary crossflow vortices is the same for both models and instrumentation techniques, although the streaks do not coincide precisely.
关键词： crossflow vortices,infrared thermography,Mach-6 quiet tunnel,boundary-layer transition,HIFiRE-5,heat flux
更新于2025-09-23 15:22:29
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Hopping parameters for tunnel coupling in 2D materials
摘要： Using Bardeen’s approach and orbital wave functions obtained by the algorithm of Herman and Skillman, we calculated interatomic matrix elements for tunnel interaction between the atoms from the set of B, C, N, Si, P, S, Ti, V, Se, Mo, Te and W, which constitute many 2D materials. In a wide range of interatomic distances, these values are approximated by simple functions with a small set of parameters. The results are presented in reference tables. These results will be useful for describing different tunnel phenomena in low-dimensional materials using the tight-binding approach.
关键词： tunnel coupling,2D materials,interatomic matrix elements,Bardeen’s approach,tight-binding approach
更新于2025-09-23 15:21:21
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Development and Study of the pa??ia??n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation
摘要： The creation of connecting tunnel diodes with a peak tunneling-current density higher than the density of the short-circuit current of photoactive p–n junctions is an important task in the development of multijunction photoconverters (III–V) of high-power optical radiation. Basing on numerical simulation of the J–U characteristics of tunnel diodes, a method is proposed for increasing the peak tunneling-current density by including a thin undoped i-type layer with a thickness of several nanometers between degenerate layers of the tunnel diode. The p–i–n-GaAs/Al0.2Ga0.8As structures of the connecting tunnel diodes with a peak tunneling-current density of up to 200 A/cm2 are grown by molecular-beam epitaxy.
关键词： quantum tunneling,molecular-beam epitaxy,tunnel diode,multijunction photoconverter,current–voltage characteristic
更新于2025-09-23 15:21:01
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Efficient Orthogonal Control of Tunnel Couplings in a Quantum Dot Array
摘要： Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and interdot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific linear combinations of physical gate voltages. However, due to exponential dependence of tunnel couplings on gate voltages, crosstalk to the tunnel barriers is currently compensated through a slow iterative process. In this work, we show that the crosstalk on tunnel barriers can be efficiently characterized and compensated for, using the fact that the same exponential dependence applies to all gates. We demonstrate efficient calibration of crosstalk in a quadruple quantum dot array and define a set of virtual barrier gates, with which we show orthogonal control of all interdot tunnel couplings. Our method marks a key step forward in the scalability of the tuning process of large-scale quantum dot arrays.
关键词： quantum simulation,quantum dot arrays,tunnel couplings,quantum computation,crosstalk compensation
更新于2025-09-23 15:21:01
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Split-off states in tunnel-coupled semiconductor heterostructures for ultrafast modulation of spin and optical polarization
摘要： We present a theoretical analysis of the split-off states emerging due to a tunnel coupling between a remote bound state and a semiconductor quantum well (QW). The on-site Coulomb repulsion and the spin splitting of the bound state have been considered. The split-off states emerge in the band gap of the QW and reveal themselves as two solitary peaks in the photoluminescence (PL) from the QW. The peaks have opposite circular polarization and their spectral position strongly depends on the tunnel coupling strength. We suggest a mechanism of ultrafast PL polarization switching by means of electrical modulation of the tunnel coupling by an external gate. The obtained results open a new possibility for the spin and optical polarization control in nanoscale systems.
关键词： split-off states,photoluminescence,optical polarization,semiconductor heterostructures,tunnel coupling,spin polarization
更新于2025-09-23 15:21:01