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- 2018
- computer statistical experiment
- statistical optimization
- resonant-tunneling diode
- negative voltage current differential resistance
- characteristics
- heterojunction
- quantum well
- resonant tunneling border
- Electronic Science and Technology
- Optoelectronic Information Science and Engineering
- Bauman Moscow State Technical University
- V.N. Karazin Kharkiv National University
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Experimental Observation of Bound States of 2D Dirac Electrons at Surface Steps of the Topological Insulator Bi <sub/>2</sub> Se <sub/>3</sub>
摘要： Topologically protected surface states of three-dimensional topological insulators provide a model framework for studying massless Dirac electrons in two dimensions. Usually a step on the surface of a topological insulator is treated as a scatterer for the Dirac electrons, and the study of its effect is focused on the interference of the incident and scattered electrons. Then a major role plays the warping of the Dirac cone far from the Dirac point. The existence of another significant effect near the Dirac point brought about by the presence of steps is experimentally demonstrated here. Namely the band bending in the vicinity of steps leads to formation of 1D bound states in the corresponding potential wells. The observation of bound states in such potential wells in our scanning tunneling microscopy and spectroscopy investigation of the surface of the topological insulator Bi2Se3 is reported. Numerical simulations support our conclusion and provide a recipe for the identification of such states.
关键词： density of states,Dirac electrons,surface states,edge states,bound states,scanning tunneling microscopy,Bi2Se3,topological insulators,scanning tunneling spectroscopy
更新于2025-09-23 15:23:52
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Resonance Tunneling Phenomena in Two-Dimensional Multilayer van der Waals Crystalline Systems
摘要： Works, mostly experimental, concerning the most interesting features of application of the resonant tunneling spectroscopy to a new type of heterosystems, van der Waals heterostructures, have been briefly reviewed. These heterostructures appeared after the recent discovery of two-dimensional crystals, which are a new class of materials beginning with graphene. The role of the angular matching of crystal lattices of conducting graphene electrodes of van der Waals systems in carrier tunneling between them has been analyzed together with the closely related problems of satisfaction of conservation laws in tunneling transitions. Manifestations of multiparticle correlation interactions between carriers in van der Waals systems such as Wigner crystallization of electrons in a two-dimensional electron gas in a magnetic field and Bose condensation of excitons in parallel two-dimensional electron gases have been briefly discussed.
关键词： angular matching,momentum conservation,resonant tunneling spectroscopy,graphene,two-dimensional crystals,Wigner crystallization,van der Waals heterostructures,Bose condensation
更新于2025-09-23 15:23:52
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Study of the Electronic and Electrical Properties of the C60F18 Polar Molecule on Au(111) Surface
摘要： For adequate description of the adsorption and self-assembly of C60F18 polar molecules on the surface Au(111), quantum-chemical studies of the electronic and electrical properties of a single molecule are performed. Using various procedures of density functional theory, the electric dipole moment of the molecule, distributions of the electrostatic potential, electric-field magnitude and electron density are calculated with controlled accuracy for the first time. An improved value of the electric dipole moment of the C60F18 molecule is obtained in a range from 10 to 11 D. The known approximation of a point dipole for electric-field strength is shown to be fulfilled within an accuracy of 30% even at distances twice greater than the size of the molecule. The structural fragments of the calculated lowest unoccupied and highest occupied molecular orbitals are assigned to their images, which were previously obtained using scanning tunneling microscopy and spectroscopy.
关键词： density functional theory,lowest unoccupied and highest occupied molecular orbitals,electric dipole moment,scanning tunneling spectroscopy,fullerene fluoride
更新于2025-09-23 15:23:52
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Definition of design guidelines, construction, and performance of an ultra-stable scanning tunneling microscope for spectroscopic imaging
摘要： Spectroscopic-imaging scanning tunneling microscopy is a powerful technique to study quantum materials, with the ability to provide information about the local electronic structure with subatomic resolution. However, as most spectroscopic measurements are conducted without feedback to the tip, it is extremely sensitive to vibrations coming from the environment. This requires the use of laboratories with low-vibration facilities combined with a very rigid microscope construction. In this article, we report on the design and fabrication of an ultra-stable scanning tunneling microscope (STM) for spectroscopic-imaging measurements that operates in ultra-high vacuum and at low temperatures (4 K). We start from existing designs with sapphire as the main material and improve the stiffness further by performing finite element analysis calculations for the main components of the microscope to guide design choices on the geometry of the parts. With this strategy, we construct a STM head with measured lowest resonant frequencies above f0 = 13 kHz for the coarse approach mechanism, a value three times higher than what has been previously reported and in good agreement with the calculations. This allows us to achieve an average vibration level of ～6 fm/√Hz, without a dedicated low-vibration lab. We demonstrate the microscope’s performance with topographic and spectroscopic measurements on the correlated metal Sr2RhO4, showing the quasiparticle interference pattern in real and reciprocal space with high signal-to-noise ratio.
关键词： ultra-high vacuum,low temperature,spectroscopic imaging,finite element analysis,ultra-stable,scanning tunneling microscopy
更新于2025-09-23 15:23:52
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[IEEE 2017 IEEE International Integrated Reliability Workshop (IIRW) - Fallen Leaf Lake, CA (2017.10.8-2017.10.12)] 2017 IEEE International Integrated Reliability Workshop (IIRW) - Silicon dioxide degradation in strongly non-uniform electric field
摘要： The new experimental evidence of field-induced trap generation in the tunnel oxide of SuperFlash? memory cells has been presented. It was shown that the negative voltage stress generates the highest local electric field in the oxide close to the floating gate tip. The effect of electric stress on the degradation of tunneling characteristics has been studied for the cells with the different tunneling geometry. The reliability aspects of field-induced trap generation are discussed. It has been concluded that the analyzed degradation mechanism is not critical for the SuperFlash technology.
关键词： floating gate,program-erase cycling endurance,memory reliability,oxide degradation,electron tunneling,Flash memory,electron trapping
更新于2025-09-23 15:23:52
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Metal–Insulator–Metal Diodes: A Potential High Frequency Rectifier for Rectenna Application
摘要： Metal–insulator–metal (MIM) diodes are among the most promising candidates for applications in the high frequency regime. Owing to the tunneling dominant current conduction mechanism, they facilitate femtosecond fast switching time, which has drawn great research attention for many potential high-speed applications and especially as a rectifier in rectenna based energy harvesting. Since its advent in the early 1960s, a lot of development has occurred in various aspects of design, fabrication and characterization of MIM diodes for rectenna applications. In this work, a detailed study on MIM diodes is conducted emphasizing the advancements in design and fabrication of MIM diodes and future challenges from the point of view of their application in rectennas. In addition, the fabrication and characterization of a graphene (Gr) based Al/AlOx/Gr MIM diode are also presented herein, exhibiting highly asymmetric current–voltage characteristics with large current density and a good degree of nonlinearity. An asymmetricity exceeding 2500 and the corresponding current density up to (cid:2) 1 A/cm2 were obtained at a voltage bias of 1 V. The peak nonlinearity was (cid:2) 3.8, whereas the zero bias resistance was as low as (cid:2) 600 X. These performance metrics are highly desirable for rectification operation and hence the as-fabricated Al/AlOx/Gr MIM diode holds great promise for its potential use as a rectifying element in rectennas.
关键词： MIM diode,terahertz,energy harvesting,tunneling
更新于2025-09-23 15:23:52
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Abrupt changes in the graphene on Ge(001) system at the onset of surface melting
摘要： By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition temperature in close proximity to the Ge melting point, highlighting an abrupt change of the graphene’s quality, morphology, electronic properties and growth mode at 930 °C. We attribute this discontinuity to the incomplete surface melting of the Ge substrate and show how incomplete melting explains a variety of diverse and long-debated peculiar features of the graphene/Ge(001), including the characteristic nanostructuring of the Ge substrate induced by graphene overgrowth. We find that the quasi-liquid Ge layer formed close to 930 °C is fundamental to obtain high-quality graphene, while a temperature decrease of 10 degrees already results in a wrinkled and defective graphene film.
关键词： Chemical Vapor Deposition,Germanium,Scanning Tunneling Microscopy,Catalysis,Graphene
更新于2025-09-23 15:23:52
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Self-trapping and ordering of heavy holes in the wide band-gap semiconductor
摘要： Scanning tunneling microscopy (STM) has been utilized for imaging and manipulation of self-trapped holes on the surface of the wide band-gap semiconductor β-Ga2O3. A positively charged surface layer comprised of localized holes with 1013 cm?2 density has been observed for n-doped samples. We show that the surface layer can be populated by hole pumping from the STM tip. A transition between the glassy phase and ordered striped phase of self-trapped holes has also been observed. Our analysis indicates that the saturated two-dimensional density of self-trapped holes may be determined by balance of self-trapping and Coulomb repulsion energies.
关键词： β-Ga2O3,scanning tunneling microscopy,self-trapping,heavy holes,charge ordering,Wigner-Mott regime
更新于2025-09-23 15:23:52
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Single spin localization and manipulation in graphene open-shell nanostructures
摘要： Turning graphene magnetic is a promising challenge to make it an active material for spintronics. Predictions state that graphene structures with specific shapes can spontaneously develop magnetism driven by Coulomb repulsion of π-electrons, but its experimental verification is demanding. Here, we report on the observation and manipulation of individual magnetic moments in graphene open-shell nanostructures on a gold surface. Using scanning tunneling spectroscopy, we detect the presence of single electron spins localized around certain zigzag sites of the carbon backbone via the Kondo effect. We find near-by spins coupled into a singlet ground state and quantify their exchange interaction via singlet-triplet inelastic electron excitations. Theoretical simulations picture how electron correlations result in spin-polarized radical states with the experimentally observed spatial distributions. Extra hydrogen atoms bound to radical sites quench their magnetic moment and switch the spin of the nanostructure in half-integer amounts. Our work demonstrates the intrinsic π-paramagnetism of graphene nanostructures.
关键词： scanning tunneling spectroscopy,graphene,Kondo effect,magnetism,spintronics
更新于2025-09-23 15:23:52
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Doping modulation of quasi-free-standing monolayer graphene formed on SiC(0001) through Sn1-Ge intercalation
摘要： In order to modulate the transfer doping of quasi-free-standing monolayer graphene (QFMLG) formed on SiC(0001), Ge atoms were intercalated additionally into QFMLG already formed by Sn intercalation between ZL and 6H-SiC(0001). By postannealing the Ge-deposited surface at 600 °C, the Sn1-xGex film with the 4 × √3 structure, composed of a bilayer and adatoms with dangling bonds under QFMLG, has been formed. It turns out that, in this Sn1-xGex film, Ge atoms preferentially occupy the bottom layer bound to the top Si atoms of the substrate, while Sn atoms occupy the top adatom sites. Strong correlation among the electrons localized at these adatom sites induces a semiconducting alloy film. As the postannealing temperature is increased up to 800 °C, the concentration of Ge in the intercalated film of the same 4 × √3 structure is gradually increased and the Dirac point also shifts gradually from ?0.16 eV to +0.20 eV relative to the Fermi level. Such a result confirms that the transfer doping of QFMLG on SiC(0001) has been modulated by varying the alloy composition of the Sn1-xGex interfacial film.
关键词： Scanning tunneling microscopy,Quasi-free-standing graphene,SnGe alloy intercalation,Hubbard band,Doping modulation,Photoemission spectroscopy,SiC(0001)
更新于2025-09-23 15:23:52