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- 实验方案
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Nucleation promoted synthesis of large-area ReS<sub>2</sub> film for high-speed photodetectors
摘要： Rhenium disulfide (ReS2) is a transition metal dichalcogenide with a layer-independent direct bandgap. Notably, the weak interlayer coupling owing to its T-phase structure enables multi-layer ReS2 to behave similarly to decoupled monolayers. This inherent characteristic makes continuous multi-layer ReS2 film a unique platform for large-area electronic applications. To date, the bulk of work on ReS2 has been conducted using mechanically exfoliated samples or small size flakes (< 1mm2) with no potential for large-scale electronics. A chemical vapor deposition (CVD) synthesis of a large area, continuous ReS2 film directly on a SiO2 substrate is also known to be more challenging compared with that of other 2D materials, such as MoS2 and WS2. This is partly due to its tendency to grow into discrete dendritic structures. In this study, a large-area (> 1 cm2), continuous multilayer ReS2 film is directly synthesized on a SiO2 substrate without any transfer process. The polycrystalline ReS2 film synthesized by this method exhibits one of the fastest photoresponse speeds (0.03 s rise time and 0.025 s decay time) among the reported CVD films. The responsivity Rλ was also the highest among large-area CVD films. The synthesis method for a continuous multilayer ReS2 film is amenable to large-scale integration and will pave the way for practical optoelectronic applications based on 2D layered materials.
关键词： Photodetector,Large-area synthesis,Metal chalcogenides,Chemical vapor deposition,Two-dimensional material,Nucleation promotor
更新于2025-09-11 14:15:04
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Flow with nanoparticle clustering controlled by optical forces in quartz glass nanoslits
摘要： In this paper, we demonstrate nanoparticle flow control using an optical force in a confined nanospace. Using nanofabrication technologies, all-quartz-glass nanoslit channels with a sudden contraction are developed. Because the nanoslit height is comparable to the nanoparticle diameter, the motion of particles is restricted in the channel height direction, resulting in almost two-dimensional particle motion. The laser irradiates at the entrance of the sudden contraction channel, leading the trapped nanoparticles to form a cluster. As a result, the translocation of nanoparticles into the contraction channel is suppressed. Because the particle translocation restarts when the laser irradiation is stopped, we can control the nanoparticle flow into the contraction channel by switching the trapping and release of particles, realizing an intermittent flow of nanoparticles. Such a particle flow control technique in a confined nanospace is expected to improve the functions of nanofluidic devices by transporting a target material selectively to a desired location in the device.
关键词： nanoparticle flow control,two-dimensional particle motion,optical force,intermittent flow,nanoslit channels
更新于2025-09-11 14:15:04
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Photodetector based on heterostructure of two-dimensional WSe2/In2Se3
摘要： Heterojunctions formed by two-dimensional (2D) layered semiconducting materials have been studied extensively in the past several years. These van der Waals (vdW) structures have shown great potential in future electronic and optoelectronic devices. However, the optoelectronic performance of these devices is limited by the indirect band gap of the multilayer materials and low light absorption of single layer materials. Here, we fabricate photodetectors based on heterojunctions composed of n-type multilayer α-Indium Selenide (In2Se3) and p-type Tungsten Diselenide (WSe2) for the first time. The direct band gap of multilayer α-In2Se3 and type-II band alignment of the WSe2/In2Se3 heterojunction enable high optoelectronic performance of the devices at room temperature in the air. Without light illumination, the dark current is effectively suppressed to 10-13 A under -1 V bias and a high rectification ratio of 7.37×103 is observed. Upon laser illumination with the wavelength of 650 nm, the typical heterojunction device exhibits a photocurrent on/off ratio exceeding 1.24×105, a maximum photo responsivity of 26 mA/W and short photoresponse time of 2.22 ms. Moreover, the heterojunction photodetectors show obvious light response in the wavelength range from 650 nm to 900 nm. The present 2D vdW heterojunctions composed of direct band gap multilayer materials show great potential in future optoelectronic devices.
关键词： In2Se3,photodetector,two-dimensional materials,WSe2,direct band gap materials,heterojunction
更新于2025-09-11 14:15:04
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Lateral InSe p–n Junction Formed by Partial Doping for Use in Ultrathin Flexible Solar Cells
摘要： Two-dimensional InSe possesses good electrical conductivity, intrinsic and structural flexibility, high chemical stability, and a tunable band gap, enabling it to be a promising candidate for flexible and wearable solar cells. Here we construct a lateral p?n junction by partially doping molybdenum trioxide (MoO3) at the surface of the InSe monolayer. Our density functional theory calculations reveal that the strong hybridization between MoO3 and InSe induces a lateral built-in electric field in the partially doped substrate and promotes the effective separation of carriers. Under a large range of external stains, the doped InSe can maintain the direct band gap, and the lateral structure device exhibits power conversion efficiencies over 5% and high carrier mobility around 1000 cm2 V?1 s?1. In particular, a power conversion efficiency of 20.7% can be achieved with 10% compressive strain. The partially doped InSe monolayer is expected to be used as an ultrathin flexible solar cell.
关键词： lateral p?n junction,density functional theory,carrier mobility,flexible solar cells,power conversion efficiency,Two-dimensional InSe,molybdenum trioxide
更新于2025-09-11 14:15:04
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Single titanium-oxide species implanted in 2D g-C3N4 matrix as a highly efficient visible-light CO2 reduction photocatalyst
摘要： A visible-light-response, efficient and robust photo-catalyst for CO2 reduction is highly desirable. Herein, we demonstrate that single titanium-oxide species implanted in two-dimensional (2D) graphitic carbon nitride (g-C3N4) matrix (2D TiO-CN) can efficiently photo-catalyze the reduction of CO2 to CO under the irradiation of visible light. The synergistic interaction between single titanium oxide species and g-C3N4 in 2D TiO-CN not only enhances the separation of photo-excited charges, but also results in visible light response of single titanium-oxide species, realizing high activity of CO2 photo-reduction with extremely high CO generation rate of 283.9 μmol·h?1·g?1, 5.7, 6.8 and 292.2 times larger than those of TiO2/CN hybrid material, CN and commercial TiO2, respectively. Time-resolved fluorescence and electron spin resonance spectroscopy revealed the catalytic mechanism of the fabricated 2D TiO-CN photocatalysts for CO2 reduction.
关键词： two-dimensional (2D) photocatalysts,graphitic carbon nitride,visible-light,single atom catalyst,CO2 reduction
更新于2025-09-11 14:15:04
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Direct, transfer-free growth of large-area hexagonal boron nitride films by plasma-enhanced chemical film conversion (PECFC) of printable, solution-processed ammonia borane
摘要： Synthesis of large-area hexagonal boron nitride (h-BN) films for two-dimensional (2D) electronic applications typically requires high temperatures (~1000 oC) and catalytic metal substrates which necessitate transfer. Here, analogous to plasma-enhanced chemical vapor deposition, a non-thermal plasma is employed to create energetic and chemically-reactive states such as atomic hydrogen and convert a molecular precursor film to h-BN at temperatures as low as 500 oC directly on metal-free substrates – a process we term plasma-enhanced chemical film conversion (PECFC). Films containing ammonia borane as a precursor are prepared by a variety of solution processing methods including spray deposition, spin coating, and ink-jet printing, and reacted in a cold-wall reactor with a planar dielectric barrier discharge operated at atmospheric pressure in a background of argon or mixture of argon and hydrogen. Systematic characterization of the converted h-BN films by micro Raman spectroscopy shows that the minimum temperature for nucleation on silicon-based substrates can be lowered from 800 to 500 oC by the addition of a plasma. Furthermore, the crystalline domain size, as reflected by a decrease in the full-width-half-maximum, increased by more than 3 times (>40 cm-1 to ~13 cm-1). To demonstrate the potential of the h-BN films as a gate dielectric in 2D electronic devices, molybdenum disulfide field-effect transistors were fabricated and the field effect mobility was found to be improved by up to four times over silicon dioxide. Overall, PECFC allows h-BN films to be grown at lower temperatures and with improved crystallinity than CVD, directly on substrates suitable for electronic device fabrication.
关键词： two-dimensional (2D) material,plasma,chemical vapor deposition (CVD),boron nitride (BN)
更新于2025-09-11 14:15:04
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Chiral phonons in two-dimensional materials
摘要： There has been growing interest in investigating chiral phonons since they are theoretically found and experimentally verified recently. In a magnetic system with time inversion symmetry breaking, phonon can have nonzero angular momentum, which makes a correction to the gyromagnetic ratio measured in the Einstein-de Haas Effect. Though total phonon angular momentum is zero in a nonmagnetic two-dimensional (2D) hexagonal system with space inversion symmetry breaking, phonons at high symmetry points of the Brillouin zone can have nonzero phonon angular momentum, which means they are chiral phonons. Chiral phonons decide selection rules in the electronic intervalley scattering, which has been experimentally verified in tungsten-diselenide monolayers very recently (Science 359, 579 (2018)). In this review, after a brief introduction of related background and some basic concepts, we mainly report recent progress of phonon angular momentum in magnetic systems and chiral phonon in nonmagnetic systems. We also review known experiments in verifications of the phonon chirality and finally conclude with an outlook of future developments.
关键词： two-dimensional materials,chiral phonons,phonon Hall effect,valleytronics,Einstein-de Haas Effect,phonon angular momentum
更新于2025-09-10 09:29:36
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Efficient and quantitative analysis of photon density of states for two-dimensional photonic crystals with omnidirectional light propagation
摘要： Omnidirectional light propagation in two-dimensional (2D) photonic crystals (PCs) has been investigated by extending the formerly developed 2D finite element analysis (FEA) of in-plane light propagation in which the corresponding band structure (BS) and photon density of states (PDOS) of 2D PCs with complex geometry configurations had been calculated more accurately by using an adaptive FEA in real space for both the transverse electric (TE) and transverse magnetic (TM) modes. In this work, by adopting a wave-guiding theory under the consideration of translational symmetry, the omnidirectional PDOS corresponding to both the radiative and evanescent waves can be calculated efficiently based on the in-plane dispersion relations of both TE and TM modes within the irreducible Brillouin zone. We demonstrate that the complete band gaps shown by previous work considering only the radiative modes will be closed by including the contributions of the evanescent modes. These results are of general importance and relevance to the spontaneous emission by an atom or to dipole radiation in 2D periodic structures. In addition, it may serve as an efficient approach to identifying the existence of a complete photonic band gap in a 2D PC instead of using time-consuming three-dimensional BS calculations.
关键词： two-dimensional photonic crystals,radiative and evanescent waves,finite element analysis,photon density of states,omnidirectional light propagation
更新于2025-09-10 09:29:36
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Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures
摘要： InAlN/GaN structures are grown using organometallic chemical vapor deposition at 730 °C. The sample for which the chamber cleaning step was applied after GaN growth shows a sharp In0.3Al0.7N/GaN transition, free electron density of ～2 × 1011 cm?2 and mobility of 44 cm2 V?1 s?1. On the other hand, the sample prepared without growth interruption demonstrated In0.4Al0.15Ga0.45N at the interface and compositional grading towards the In0.4Al0.6N surface. In this case a two-dimensional hole gas (2DHG) is created with a density of ～2 × 1012 cm?2 and mobility of ～0.6 cm2 V?1 s?1. Ga incorporation in the InAlN barrier is crucial for designing non-inverted 2DHG transistors.
关键词： InAlN/GaN,non-inverted heterostructures,two-dimensional hole gas,organometallic chemical vapor deposition
更新于2025-09-10 09:29:36
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Dewetting of monolayer water and isopropanol between MoS2 nanosheets
摘要： Understanding dewetting of solvent molecules confined to layered material (LM) interfaces is crucial to the synthesis of two-dimensional materials by liquid-phase exfoliation. Here, we examine dewetting behavior of water and isopropanol/water (IPA/H2O) mixtures between molybdenum disulfide (MoS2) membranes using molecular dynamics (MD) simulations. We find that a monolayer of water spontaneously ruptures into nanodroplets surrounded by dry regions. The average speed of receding dry patches is close to the speed of sound in air. In contrast, monolayer mixtures of IPA/H2O between MoS2 membranes slowly transform into percolating networks of nanoislands and nanochannels in which water molecules diffuse inside and IPA molecules stay at the periphery of islands and channels. These contrasting behaviors may explain why IPA/H2O mixtures are much more effective than H2O alone in weakening interlayer coupling and exfoliating MoS2 into atomically thin sheets.
关键词： molecular dynamics simulations,liquid-phase exfoliation,isopropanol/water mixtures,two-dimensional materials,layered material interfaces,dewetting,solvent molecules,MoS2 membranes
更新于2025-09-10 09:29:36