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[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - The Power-dependent Phase Change in a Low-bias High-speed Modified Uni-traveling Carrier Photodetector
摘要： The characterization of the phase change of 60-GHz the modified uni-traveling carrier sinusoidal photodetector is reported. The absolute phase change is observed smallest when the differential capacitance equals to zero.
关键词： Photodetectors,phase change,microwave photonic
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) - Miramar Beach, FL, USA (2019.8.19-2019.8.21)] 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) - Ultra-Thin MSM Photodetectors with Nano-Structured Surface
摘要： The photon trapping structure helps to enhance the quantum efficiency (QE) in ultra-thin metal-semiconductor-metal (MSM) photodetectors so that they can achieve high speed while maintaining less than 1 micron thickness. The study shows that the short pulse response is shorter if the device is thinner. For the thin layer of Si with thickness 250nm the pulse response is 2ps, while for 400nm and 700nm the pulse responses are 3ps and 5ps, respectively. The QE for the thin layer of Si with nano-holes is higher than the flat Si with the same thickness. The QE for 250nm Si with nano-holes is 60% at 850nm wavelength, while for flat Si with the same thickness is 20%. The QE for 400nm Si with nano-holes is 80% at 850nm wavelength, while for flat Si with the same thickness is 40%. The QE for 700nm Si with nano-holes is 90% at 850nm wavelength, while for flat Si with the same thickness is 60%. The QE for 1500nm Si with nano-holes is 95% at 850nm wavelength, while for flat Si with the same thickness is 80%. The QE for the thin layer of Si with nano-holes is higher than the flat Si with the same thickness. The QE for 250nm Si with nano-holes is 60% at 850nm wavelength, while for flat Si with the same thickness is 20%. The QE for 400nm Si with nano-holes is 80% at 850nm wavelength, while for flat Si with the same thickness is 40%. The QE for 700nm Si with nano-holes is 90% at 850nm wavelength, while for flat Si with the same thickness is 60%. The QE for 1500nm Si with nano-holes is 95% at 850nm wavelength, while for flat Si with the same thickness is 80%.
关键词： MSM photodetectors,ultra-thin,quantum efficiency,nano-holes,photon trapping
更新于2025-09-16 10:30:52
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Electrostatically Doped Silicon Nanowire Arrays for Multispectral Photodetectors
摘要： Nanowires have promising applications as photodetectors with superior ability to tune absorption with morphology. Despite their high optical absorption, the quantum efficiencies of these nanowire photodetectors remain low due to difficulties in fabricating a shallow junction using traditional doping methods. As an alternative, we report non-conventional radial heterojunction photodiodes obtained by conformal coating of indium oxide layer on silicon nanowire arrays. The indium oxide layer has a high work function which induces a strong inversion in the silicon nanowire and creates a virtual p-n junction. The resulting nanowire photodetectors show efficient carrier separation and collection leading to an improvement of quantum efficiency up to 0.2. In addition, by controlling the nanowire radii, the spectral response of the In2O3/Si nanowire photodetectors are tuned over several visible light wavelengths, creating a multispectral detector. Our approach is promising for the development of highly-efficient wavelength selective photodetectors.
关键词： electrostatic doping,nanowire photodetectors,multispectral,photosensors,silicon nanowire,dopant-free,radial junction
更新于2025-09-16 10:30:52
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High-Performance Transparent Ultraviolet Photodetectors Based on InGaZnO Superlattice Nanowire Arrays
摘要： Due to the efficient photocarrier separation and collection coming from their distinctive band structures, superlattice nanowires (NWs) have great potential as active materials for high-performance optoelectronic devices. In this work, InGaZnO NWs with superlattice structure and controllable stoichiometry are obtained by ambient-pressure chemical vapor deposition (CVD). Along the NW axial direction, perfect alternately stacking of InGaO(ZnO)4+ blocks and InO2- layers is observed to form a periodic layered structure. Strikingly, when configured into individual NW photodetectors, the Ga concentration is found to significantly influence the amount of oxygen vacancy and oxygen molecules adsorbed on the NW surface, which dictate the photoconducting properties of the NW channels. Based the optimized Ga concentration (i.e. In1.8Ga1.8Zn2.4O7), the individual NW device exhibits an excellent responsivity of 1.95×105 A/W and external quantum efficiency of as high as 9.28×107 % together with a rise time of 0.93 s and a decay time of 0.2 s for the ultraviolet (UV) photodetection. Besides, the obtained NWs can be fabricated into large-scale parallel arrays on glass substrates as well to achieve the fully-transparent UV photodetectors, where the performance is on the same level or even better than many transparent photodetectors with high performance. All the results discussed above demonstrate the great potential of InGaZnO superlattice NWs for next-generation advanced optoelectronic devices.
关键词： superlattice,InGaZnO,nanowires,transparent,ultraviolet photodetectors
更新于2025-09-16 10:30:52
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High Sensitivity Hybrid PbS CQD-TMDC Photodetectors up to 2 μm
摘要： Recent approaches to develop infrared photodetectors characterized by high sensitivities, broadband spectral coverage, easy integration with silicon electronics, and low cost have been based on hybrid structures of transition metal dichalcogenides (TMDCs) and PbS colloidal quantum dots (CQDs). However, to date, such photodetectors have been reported with high sensitivity up to 1.5 μm. Here we extend the spectral coverage of this technology toward 2 μm, demonstrating for the ?rst time compelling performance with responsivities 1400 A/W at 1.8 μm with 1 V bias and detectivities as high as 1012 Jones at room temperature. To do this, we studied two TMDC materials as a carrier transport layer, tungsten disul?de (WS2), and molybdenum disul?de (MoS2) and demonstrate that WS2-based hybrid photodetectors outperform those of MoS2 due to a more adequate band alignment that favors carrier transfer from the CQDs.
关键词： quantum dots,tungsten sul?de,infrared photodetectors,lead sul?de,molybdenum sul?de,two-dimensional materials
更新于2025-09-16 10:30:52
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Enhancing Quantum Yield in Strained MoS2 Bilayers by Morphology-controlled Plasmonic Nanostructures towards Superior Photodetectors
摘要： Recently, extracting hot electrons from plasmonic nanostructures and utilizing them to enhance the optical quantum yield of 2D transition-metal dichalcogenides (TMDs) have been topics of interest in the field of optoelectronic device applications, such as solar cells, light emitting diodes, photodetectors and so on. The coupling of plasmonic nanostructures with nanolayers of TMDs depends on the optical properties of the plasmonic materials, including radiation pattern, resonance strength, and hot electron injection efficiency. Herein, we demonstrate the augmented photodetection of a large-scale, transfer-free bilayer MoS2, by decorating this TMD with four different morphology-controlled plasmonic nanoparticles. This approach allows engineering the bandgap of the bilayer MoS2 due to localized strain that stems up from plasmonic nanoparticles. In particular, the plasmonic strain blue shifts the band gap of bilayer MoS2 with 32 times enhanced photoresponse demonstrating immense hot electron injection. Besides, we observed the varied photoresponse of MoS2 bilayer hybridized with different morphology controlled plasmonic nanostructures. Although, hot electron injection was a substantial factor for photocurrent enhancement in hybrid plasmonic-semiconductor devices, our investigations further show that other key factors such as highly directional plasmonic modes, high aspect-ratio plasmonic nanostructures and plasmonic strain induced beneficial band-structure modifications were crucial parameters for effective coupling of plasmons with excitons. As a result, our study sheds light on designing highly tailorable plasmonic nanoparticles integrated transition metal dichalcogenide-based optoelectronic devices.
关键词： Plasmonic Nanostructures,Strained MoS2 Bilayers,Quantum Yield,Photodetectors
更新于2025-09-16 10:30:52
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Broadband polymer photodetectors with a good trade-off between broad response and high detectivity by using combined electron-deficient moieties
摘要： High-performance broadband photodetectors based on low-bandgap conjugated polymers are scarce due to a trade-off between the photoresponse range and device performance. In this work, the polymers with structural features responsible for both broad response and high detectivity are realized by using the combined electron deficient moieties at the molecular level. Based on the electron-deficient diketopyrrolopyrrole (DPP) and benzothiadiazole (BT), the combined units of DPP-DPP and DPP-BT-DPP are deemed more electron deficient and were successfully incorporated into the corresponding polymers. The arrangement of electron deficient moieties in the polymer mainchain were found to be able to greatly affect the absorption profile, energy level, molecular stacking, and blend film morphology. Consequently, the photodetector based on the polymer with DPP-BT-DPP acceptor exhibited the D* value of over 1012 Jones in the spectral region of 320–930 nm under -0.1 V bias.
关键词： low-bandgap conjugated polymers,electron deficient moieties,high detectivity,DPP,broadband photodetectors,BT
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - High-Speed Germanium Pin Photodiodes Integrated on Silicon-on-Insulator Nanophotonic Waveguides
摘要： Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of -13.9, -12.7, and -11.3 dBm.
关键词： silicon nanophotonics,optical photodetectors,complementary metal-oxide-semiconductor technology,germanium,silicon-on-insulator
更新于2025-09-16 10:30:52
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Highly sensitive, ultra-low dark current, self-powered solar-blind ultraviolet photodetector based on ZnO thin-film with an engineered rear metallic layer
摘要： In this paper, novel self-powered, solar-blind UV photodetector (PD) designs based on a ZnO thin-film with engineered back metal layer (BML) were fabricated by RF magnetron sputtering and e-beam evaporation techniques. An exhaustive study concerning the impact of dissimilar BML (Au and Ni) on the device structural, optical and electrical properties was carried out. The measured I–V curves illustrated an asymmetrical behavior, enabling a clear and distinctive photovoltaic mode. Superb sensitivity of 107, high ION/IOFF ratio of 149dB, ultralow dark-noise current less than 11pA and responsivity exceeding 0.27A/W were reached for the prepared ZnO-based UV-PDs in self-powered mode. The role of the engineered BML in promoting effective separation and transfer of the photo-induced carriers was discussed using the band-diagram theory. The influence of the annealing process on the UV-sensor performance was also investigated. The annealed device at 500°C demonstrated a lower dark current of a few picoamperes and a high rejection ratio of 2.2×103, emphasizing its exciting visible blindness characteristics. Therefore, the use of an engineered BML with optimized annealing conditions open up new perspectives to realizing high-performance, self-powered solar-blind UV-PDs based on simple thin-film-ZnO structure strongly desirable for various optoelectronic applications.
关键词： Self-powered,ZnO,Annealing,Solar-blind,UV photodetectors,RF sputtering
更新于2025-09-16 10:30:52
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Heterostructures GaxIn1 –xAsyBizSb1 –y–z/InSb for Photodetector Devices
摘要： Isoparametric heterostructures GaxIn1 – xAsyBizSb1 – y – z/InSb for photodetectors operating in a 6- to 12-μ m wavelength interval have been manufactured by the method of floating-zone recrystallization with temperature gradient. The introduction of bismuth into GaInAsSb solid solution provides a decrease in bandgap width Eg, the corresponding increase in the working wavelength interval up to 12 μ m, and a shift in the photosensitivity maximum to longer wavelengths.
关键词： isoparametric heterostructures,photodetectors,IR detectors,absolute spectral sensitivity,volt–watt responsivity
更新于2025-09-16 10:30:52