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High-Temperature β-Ga$_2$O$_3$ Schottky Diodes and UVC Photodetectors using RuOx Contacts
摘要： High-temperature β-Ga2O3 Schottky diodes with very low leakage currents, capable of sensitive UVC detection at 350 oC, were fabricated on 201 β-Ga2O3 single crystal substrates using intentionally-oxidized ruthenium (RuOx) Schottky contacts (SCs), with x = ~2.1. These RuOx:β-Ga2O3 SCs were characterized by rectification ratios of more than 1010 at ± 3 V and very low reverse leakage current densities of less than 1 nAcm-2 (~1 pA) at ?3.0 V, that were unchanged from 24 to 350 oC. These very low high-temperature leakage currents were due to their extremely high Schottky barriers of 2.2 eV at 350 oC, that were stable against repeated operation at this temperature. Although not optimized for photodetection, these SCs could detect UVC (λ = 248 nm) radiation at a temperature of 350 oC with a UVC/dark current ratio of ~103. The very high and thermally stable rectifying barriers of these RuOx:β-Ga2O3 SCs makes them strong candidates for use in high temperature β-Ga2O3 rectifying diodes and UVC photodetectors.
关键词： High Temperature Devices,Schottky Contacts,RuO2,Ga2O3,Ruthenium Dioxide,UV Photodetectors
更新于2025-09-11 14:15:04
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Flexible graphene photodetectors for wearable fitness monitoring
摘要： Wearable health and wellness trackers based on optical detection are promising candidates for public health uses due to their noninvasive tracking of vital health signs. However, so far, the use of rigid technologies hindered the ultimate performance and form factor of the wearable. Here, we demonstrate a new class of flexible and transparent wearables based on graphene sensitized with semiconducting quantum dots (GQD). We show several prototype wearable devices that are able to monitor vital health signs noninvasively, including heart rate, arterial oxygen saturation (SpO2), and respiratory rate. Operation with ambient light is demonstrated, offering low-power consumption. Moreover, using heterogeneous integration of a flexible ultraviolet (UV)–sensitive photodetector with a near-field communication circuit board allows wireless communication and power transfer between the photodetectors and a smartphone, offering battery-free operation. This technology paves the way toward seamlessly integrated wearables, and empowers the user through wireless probing of the UV index.
关键词： flexible graphene photodetectors,quantum dots,wearable fitness monitoring,UV index,health signs monitoring
更新于2025-09-11 14:15:04
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Reliability Characterization and Modelling of High Speed Ge Photodetectors
摘要： Understanding the origin and protocols to induce performance degradations of silicon photonics high speed photodetector represent a major issue for the qualification of the reliability of these devices. Using advanced characterization technics, it is shown that the dark current, the photonic current and the cut-off frequency of the photodiode can be degraded during voltage stress of 106 s, which could ultimately induce some significant device performance drift and failure. An explanation of these degradations is presented based on both electrical observed characterization degradations of both dark current and responsivity can indeed be modeled by a single carrier lifetime degradation, attributed to an impacting an increase of the surface recombination rate, unexpected in the this model are photocurrent. The results obtained with experimentally confirmed by extracting the activation energy of the dark current, before and after stress. The improved physical understanding of the degradation is expected to lead to shorter test protocols for silicon photonics devices.
关键词： carrier lifetime electrical characterization,Silicon photonics,activation energy,Ge photodetectors reliability
更新于2025-09-11 14:15:04
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[IEEE 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Fukuoka, Japan (2019.7.7-2019.7.11)] 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes
摘要： We present a temperature dependence study of InGaAs/InAlAs single photon avalanche diode. The breakdown voltage as a function of temperature exhibits two slope behavior. The temperature coefficient is sensitive to the avalanche region. We have excluded the issue of imperfect sidewall. However, the physics behind needs further investigation.
关键词： Photodetectors
更新于2025-09-11 14:15:04
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High performance phototransistors with organic/quantum dot composite materials channels
摘要： Nanomaterials, especially quantum dots, have become one of the most great potential channel transport layer materials in the field of photo detection mainly due to their particular light absorption characteristics. However, there are still many disadvantages such as low carrier transport capability possibly attributable to the discontinuity nature of materials. Therefore, particular phototransistors with pentacene/CdSe@ZnS QDs composite materials channels have been prepared by simply blending and spin-coating 6,13-Bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) and QDs solution in weight ratio of 3:1. The particular device architecture with organic/quantum dot composite materials channels effectively combined the high carrier mobility advantage of organic semiconductors with the strong absorption characteristic of quantum dots in specific optical band regions and further overcame the low conductivity shortcomings of pure quantum dot materials. The device with particular pentacene/CdSe@ZnS QDs composite channel exhibited excellent electrical and optical properties with current switch ratio Ion/off of 104, carriers mobility of ~0.161 cm2/V, photosensitivity P of 105, responsivity R of 0.33 mA/W and detectivity D of 1.48 ? 1011 Jones at drain voltage of (cid:0) 35 V and light intensity of 1.6 mW/cm2, respectively, indicating that this composite, as one of the most promising channel transport layer material candidates for photodetector, provides one chance to improve the characteristic of photodetector transistors just by using hybrid channel technology.
关键词： Solution method,Quantum dots,Photodetectors,Composite materials,Organic thin film transistors
更新于2025-09-11 14:15:04
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[IEEE 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Fukuoka, Japan (2019.7.7-2019.7.11)] 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Integrated High Power Germanium Photodetectors Assisted by Optical Field Manipulation
摘要： We experimentally demonstrate high power germanium photodetectors based on optical field manipulation. The proposed structure can generate a maximum 50% more photocurrents under high power illumination due to optimized light distributions in germanium.
关键词： Photodetectors,Advanced Active Devices,Photonic Integration,Si/Ge
更新于2025-09-11 14:15:04
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All-inorganic Lead Halide Perovskites: A Promising Choice for Photovoltaics and Detectors
摘要： Recent years have witnessed a significant performance breakthrough in all-inorganic perovskite solar cells, but their power conversion efficiencies are still far lower than a theoretical limit and they also suffer from severe moisture instabilities. Based on the discussions on crystal structures, chemical bonds, and optical and electrical properties of all-inorganic perovskites, we have summarized their comprehensive applications in solar cells and detectors. The effects of monovalent and divalent ion doping, morphology, crystallization control and interface engineering on device performance and stability have been carefully evaluated. Narrow-bandgap CsPbI3 polycrystalline bulk film solar cell has achieved the highest power conversion efficiency of 18.4%, while stable CsPbBr3 nanocrystal film is a more successful choice in UV-visible and high-energy ray detections. Finally, we call on boosting the performance and stability of solar cells and shortening response time for tandem photovoltaic and high-speed dynamic detection applications, respectively.
关键词： polycrystalline bulk films,solar cells,All-inorganic perovskites,photodetectors,nanocrystal films
更新于2025-09-11 14:15:04
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High responsivity and fast UV-Vis-SWIR photodetector based on Cd3As2/MoS2 heterojunction
摘要： High responsivity, fast response time, ultra-wide detection spectrum are pursuing goals for state-of-art photodetectors. Cd3As2, as a three-dimensional (3D) Dirac semimetal, has zero-bandgap, high light absorption rate in broad spectral region, and higher mobility than graphene at room temperature. However, photoconductive detectors based Cd3As2 suffer low quantum efficiency due to the absence of high built-in field. Here, Cd3As2 nanoplate/multilayer MoS2 heterojunction photodetector was fabricated and achieved a quite high responsivity of 2.7×103 A/W at room temperature. The photodetector exhibits a short response time of in broad spectra region from ultraviolet (365 nm) to short-wavelength-infrared (1550 nm) and reached 65 μs at 650 nm. This work provides a great potential solution for high-performance photodetector and broadband imaging by combining 3D Dirac semi-metal materials with semiconductor materials.
关键词： 3D Dirac semimetals,broadband,photodetectors,responsivity,heterojunction
更新于2025-09-11 14:15:04
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Cross‐Bar SnO <sub/>2</sub> ‐NiO Nanofiber‐Array‐Based Transparent Photodetectors with High Detectivity
摘要： An cross-bar structure is employed to design a transparent p-n junction-based photodetector. The device consisting of aligned n-SnO2 and p-NiO nanofibers is prepared via a mature electrospinning process that is suitable for commercial applications. It exhibits a high detectivity of 2.33 × 1013 Jones under 250 nm illumination at ?5 V, outperforming most state-of-art SnO2-based UV photodetectors. It is also endowed with a self-powered feature due to a photovoltaic effect from the p-n junction, resulting in a photocurrent of 10?10 A, responsivity of 30.29 mA W?1 at 0 V bias, and detectivity of 2.24 × 1011 Jones at 0.05 V bias. Moreover, the device is highly transparent (over 90% toward visible light) due to the wide band gap of photoactive materials and well-designed cross-bar fiber structure. Additionally, an n-SnO2-p-ZnO:Ag (Ag doped ZnO) self-powered UV photodetector is fabricated that shows good performance and give another example of the use of the cross-bar structure.
关键词： p-n junctions,self-powered photodetectors,transparent electronics
更新于2025-09-11 14:15:04
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[IEEE 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Fukuoka, Japan (2019.7.7-2019.7.11)] 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Receiver Characteristics of 4ch Transceiver Module with Si Photonics Integrated Chip Suitable for TWDM-PON ONU
摘要： The prototype 4-channel transceiver module equipped with Si photonics integrated chip with polarization diversity and evanescent-coupled waveguide lateral p-i-n Ge PDs was fabricated, and its applicability to a TWDM-PON ONU receiver was experimentally demonstrated.
关键词： Photonic integrated circuits,TWDM-PON,Photodetectors,Advanced Passive Devices
更新于2025-09-11 14:15:04