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A phototactic liquid micromotor
摘要： In recent years, micromotors, which possess unique autonomous moving properties inside a solution, have shown great potential in a variety of applications ranging from environmental remediation to the biomedical field. However, most of the micromotors are based on solid materials. In this paper, we report a liquid (water, serum or urine) micromotor, which exhibits self-propelling behavior in an oil solution upon white light irradiation. Interestingly, the liquid micromotor exhibits both positive and negative phototaxis, which relies on the photochromism of the surrounding spiropyran molecules dissolved in oil or the thermal effect, respectively. In addition, light shows great versatility in controlling the motion behavior of the liquid micromotor so that it can move in a desired fashion. Furthermore, we have demonstrated that the liquid-based micromotor has great advantages over the solid ones. It not only enables fusion and reaction between different reactant-loaded liquid micromotors based on the combined positive and negative phototaxis, but also allows controlled cargo capture and transportation. We thus believe the liquid micromotor reported in the current study may have potential applications in various fields such as glucose detection.
关键词： micromotors,glucose detection,liquid micromotor,white light irradiation,phototaxis,spiropyran
更新于2025-09-09 09:28:46
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Uncertainty Model for Total Solar Irradiance Estimation on Australian Rooftops
摘要： The installations of solar panels on Australian rooftops have been in rise for the last few years, especially in the urban areas. This motivates academic researchers, distribution network operators and engineers to accurately address the level of uncertainty resulting from grid-connected solar panels. The main source of uncertainty is the intermittent nature of radiation, therefore, this paper presents a new model to estimate the total radiation incident on a tilted solar panel. Where a probability distribution factorizes clearness index, the model is driven upon clearness index with special attention being paid for Australia with the utilization of best-fit-correlation for diffuse fraction. The assessment of the model validity is achieved with the adoption of four goodness-of-fit techniques. In addition, the Quasi Monte Carlo and sparse grid methods are used as sampling and uncertainty computation tools, respectively. High resolution data resolution of solar irradiations for Adelaide city were used for this assessment, with an outcome indicating a satisfactory agreement between actual data variation and model.
关键词： diffuse fraction correlation,goodness of fit,Solar irradiation prediction,tilted surface
更新于2025-09-09 09:28:46
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Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation
摘要： The influence of nonequilibrium processes in semiconductor structures under the effect of radiation on the characteristics of structures and microwave transistors based on them is analyzed. Special attention is paid to the comparison of pilot (experimental) and series-produced structures and transistors based on them before and after γ-neutron irradiation.
关键词： radiation resistance,nonequilibrium processes,γ-neutron irradiation,microwave transistors,semiconductor structures
更新于2025-09-09 09:28:46
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Synthesis of Al-MCM-41@Ag/TiO <sub/>2</sub> Nanocomposite and Its Photocatalytic Activity for Degradation of Dibenzothiophene
摘要： Mesoporous Al-MCM-41@Ag/TiO2 nanocomposites were synthesized successfully by combining the sol-gel method and hydrothermal treatment, using titanium isopropoxide (TTIP), AgNO3, and Vietnamese bentonite as precursors of Ti, Ag, and Si, respectively. The synthesized materials were well characterized by X-ray powder di?raction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), N2 adsorption-desorption isotherm measurements, energy dispersive X-ray spectroscopy (EDX), UV-visible di?use re?ectance spectroscopy (UV-Vis/DRS), and X-ray photoelectron spectroscopy (XPS). The photocatalytic activity was evaluated by the photodegradation of dibenzothiophene (DBT) under both UV and visible light irradiation. MCM-41@Ag/TiO2 catalyst exhibited high catalytic activity for the oxidative desulfurization (ODS) of DBT reaching almost 100% conversions at 50°C after 2 h under UV and visible light irradiations. The signi?cant enhanced degradation of DBT over Al-MCM-41@Ag/TiO2 might be due to the synergy e?ects of high surface area of MCM-41, well-distributed TiO2 anatase, and reduced electron-hole recombination rates due to the dispersion of Ag nanoparticles.
关键词： photocatalytic activity,Al-MCM-41@Ag/TiO2,dibenzothiophene,visible light irradiation,oxidative desulfurization
更新于2025-09-04 15:30:14
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Stored energy release in neutron irradiated silicon carbide
摘要： The purpose of this investigation is to experimentally quantify the stored energy release upon thermal annealing of previously irradiated high-purity silicon carbide (SiC.) Samples of highly-faulted poly-crystalline CVD b-SiC and single crystal 6HeSiC were irradiated in a mixed spectrum ?ssion reactor near 60 (cid:1)C in a ?uence range from 5 (cid:3) 1023 to 2 (cid:3) 1026 n/m2 (E > 0.1 MeV), or about 0.05e20 dpa, in order to quantify the stored energy release and correlate the release to the observed microscopic swelling, lattice dilation, and microstructure as observed through TEM. Within the ?uence of this study the crystalline material was observed to swell to a remarkable extent, achieving 8.13% dilation, and then cross a threshold dose for amorphization at approximately 1 (cid:3) 1025 n/m2 (E > 0.1 MeV) Once amorphized the material attains an as-amorphized swelling of 11.7% at this irradiation condition. Coincident with the extraordinary swelling obtained for the crystalline SiC, an equally impressive stored energy release of greater than 2500 J/g at the critical threshold for amorphization is inferred. As expected, following amorphization the stored energy in the structure diminishes, measured to be approximately 590 J/g. Generally, the ?ndings of stored energy are consistent with existing theory, though the amount of stored energy given the large observed crystalline strain is remarkable. The overall conclusion of this work ?nds comparable stored energy in SiC to that of nuclear graphite, and similar to graphite, a stored energy release in excess of its speci?c heat in some irradiation conditions.
关键词： Neutron irradiation,Amorphization,Silicon carbide,Swelling,Stored energy
更新于2025-09-04 15:30:14
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Temperature-dependent photoluminescence processes of GaInP top cell irradiated with 11.5?MeV and 1.0?MeV electrons
摘要： The effects of 11.5 MeV electrons irradiation on the GaInP top cell of GaInP/GaAs/Ge triple-junction solar cells have been investigated by temperature-dependent photoluminescence (PL) measurements. The thermal quenching of PL intensity is observed in the temperature range of 10 K–270 K, attributing to the nonradiative recombination centers H2 (Ev + 0.55 eV) hole trap and H3 (Ev + 0.76 eV) hole trap. A slight negative thermal quenching (NTQ) of PL intensity exists at nearly 300 K and could be associated with the 0.18 eV intermediate states. The temperature-dependent photoluminescence process of GaInP top cell irradiated with 11.5 MeV electrons differs with that irradiated with 1.0 MeV electrons.
关键词： Photoluminescence,Electron irradiation,GaInP top cell,Negative thermal quenching
更新于2025-09-04 15:30:14
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Effect of temperature on structural and optical properties of solvothermal assisted CdS nanowires with enhanced photocatalytic degradation under natural sunlight irradiation
摘要： Photocatalytic degradation of toxic dyes is an important topic across the globe. This paper reports the photocatalytic degradation of methylene blue (MB) dye using cadmium sulfide (CdS) nanowires as a photocatalyst under natural sunlight irradiation. The CdS nanowires were successfully synthesized by a solvothermal route using ethylenediamine as a solvent with a series of different reaction temperature from 160 to 200 °C for a fixed time of 24 h. Multiple characterization techniques were used to investigate the structural, morphology, optical and photocatalytic study of as-synthesized CdS samples. The XRD patterns reveal highly crystalline CdS nanomaterials with a hexagonal crystal structure. The FESEM and HRTEM observations clearly confirmed a large number of uniform nanowires grown in different directions and interconnected with each other. The stoichiometric ratio of Cd:S is almost 1:1, confirmed by EDS analysis. Room temperature PL spectra of CdS nanowires exhibit a narrow emission at a wavelength of 512 nm. The CdS nanowires synthesized at 200 °C shows the excellent photocatalytic performance with highest photodegradation efficiency has reached up to 98.75% within 20 min, under sunlight irradiation. The 93.06% and 89.10% photodegradation efficiency were observed in CdS nanowires synthesized at 180 °C and 160 °C, respectively. From these result, it is observed that the crystallite size and morphology of CdS nanowires are the influence factors for the photodegradation efficiency of MB dye. Furthermore, the mechanism of MB dye photodegradation using CdS nanowires was discussed. These CdS nanowires with high photocatalytic activity can be used for future in water pollutant degradation.
关键词： Hexagonal CdS,Solvothermal synthesis,MB dye degradation,Reaction temperature,Sunlight irradiation
更新于2025-09-04 15:30:14
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The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes
摘要： To observe the neutron transmutation and displacement damage effects, Au/n-Si/Ag Schottky barrier diodes were exposed to thermal neutron irradiation. Irradiation induced changes in Schottky barrier height, saturation current, and donor concentration were investigated by using current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diodes. The irradiation for 10 s caused a little change in the Schottky diode parameters which were obtained from I-Vand C-V measurements. Observable changes in the parameters occurred after the second irradiation of 30 s duration. After the total dose, an increase in saturation current and barrier height inhomogeneties took into place and a decrease in carrier concentration was observed due to the carrier removal effect of thermal neutron-induced damages. Whereas the values of zero bias barrier height have little change after irradiations, the values of ideality factor increased after irradiations. The values of zero-bias barrier height for all diodes was also calculated from reverse bias current characteristics. After second dose, the values of zero-bias barrier height decreased for all diodes. The values of series resistance were determined by Cheung functions before and after irradiations. Before irradiations, the values were found between 2.10 kΩ and 2.76 kΩ. After second dose, the values of series resistance of all diodes decreased and were found between 1.59 kΩ and 2.20 kΩ. Furthermore, the proof of thermal neutron transmu- tation of elements in the devices was given via energy dispersive spectroscopy (EDS) mapping.
关键词： Semiconductor device radiation effects,Schottky diode,Electrical characterization,EDS mapping,Silicon,Thermal neutron irradiation
更新于2025-09-04 15:30:14
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Structural and optical studies of gamma irradiated N-doped 4H-SiC
摘要： In this paper, the gamma irradiation effects on the structural and optical properties of N-doped 4H-SiC (n-4H-SiC) is presented up to a cumulative gamma radiation dose of 1500 kGy. The studies showed marginal and inconsistent variation in the - and -axis lattice constants of 4H-SiC due to the accumulation of gamma-induced defect states. The modifications in the longitudinal optical plasmon-phonon coupled (LOPC) modes, Biedermann absorption bands, Urbach energy ( ) and defect related photoluminescence (DPL) bands are discussed at different (500, 1000 and 1500 kGy) irradiation doses. Despite these effects, the overall gamma-induced disorder ( ) and variation in the free carrier concentrations ( ) are found to be negligible and demonstrating the radiation resistant property of n-4H-SiC under gamma radiation environment.
关键词： PL,Silicon carbide,XRD,LOPC modes,Gamma irradiation
更新于2025-09-04 15:30:14
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Synthesis of Lead-Doped SrTiO <sub/>3</sub> Perovskite Type Oxides and Their Photocatalytic Activity Under Visible Light Irradiation
摘要： Pure and lead-doped SrTiO3 perovskite type oxides were successfully synthesized by sol–gel method and characterized by XRD, SEM and DRS. From the results of XRD, the metal replacement with the Pb ion on the crystal lattice does not change the high crystallinity of the perovskite structure. UV-vis DRS analysis shows that Pb was in situ doped in the lattice of SrTiO3 and the absorption band shifted to a higher wavelength on the Pb-doped SrTiO3 sample compared to the pure SrTiO3 sample. We also investigated the photocatalytic activity of Pb-doped SrTiO3 for the decomposition of Rhodamine B under visible light irradiation. From the results of photocatalytic decomposition of RhB, a doping of lead into SrTiO3 perovskite oxides enhanced the photocatalytic activity under visible light irradiation.
关键词： Photocatalytic Activity,Visible Light Irradiation,Lead-Doped SrTiO3
更新于2025-09-04 15:30:14