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Cesium Lead Inorganic Solar Cell with Efficiency beyond 18% via Reduced Charge Recombination
摘要： Cesium-based inorganic perovskite solar cells (PSCs) are promising due to their potential for improving device stability. However, the power conversion efficiency of the inorganic PSCs is still low compared with the hybrid PSCs due to the large open-circuit voltage (VOC) loss possibly caused by charge recombination. The use of an insulated shunt-blocking layer lithium fluoride on electron transport layer SnO2 for better energy level alignment with the conduction band minimum of the CsPbI3-xBrx and also for interface defect passivation is reported. In addition, by incorporating lead chloride in CsPbI3-xBrx precursor, the perovskite film crystallinity is significantly enhanced and the charge recombination in perovksite is suppressed. As a result, optimized CsPbI3-xBrx PSCs with a band gap of 1.77 eV exhibit excellent performance with the best VOC as high as 1.25 V and an efficiency of 18.64%. Meanwhile, a high photostability with a less than 6% efficiency drop is achieved for CsPbI3-xBrx PSCs under continuous 1 sun equivalent illumination over 1000 h.
关键词： VOC loss,inorganic perovskite solar cells,recombination defects
更新于2025-09-19 17:13:59
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Alkali-induced Grain Boundary Reconstruction on Cu(In,Ga)Se2 Thin Film Solar Cells using Cesium Fluoride Post Deposition Treatment
摘要： Heavy alkali metal treatment is a key factor to approach high efficiency in Cu(In, Ga)Se2 (CIGS) solar cells. Here, we show that the Cs-induced surface modification on CIGS thin-film solar cells, especially on grain boundary reconstruction generated from cesium fluoride post-deposition treatment (CsF-PDT). The CsInSe2 phase can be synthesized by CsF-PDT process without extra assistant species, and specifically favors grain boundaries (GBs), which was further characterized by FE-EPMA, TEM, and SIMS analysis. The Cs-contained GBs may both create the valence-band downshift and conduction-band upward. By controlling the Cs-contained layer thickness and modifying absorber, the spike at conduction-band can be overcome by tunneling while remaining high valence-band downshift to suppress the GBs recombination. The efficiency was improved from 15.1 to 18.3% after CsF-PDT; the voltage loss of Eg/q-Voc was down below 0.4 V. Those improvements are mainly contributed from the grain boundary reconstruction at the junction area using CsF-PDT to reduce the recombination.
关键词： PDT,heavy alkali,Voc loss,CIGS,CsF,grain boundary
更新于2025-09-11 14:15:04