Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors

摘要： Solution processible perovskite quantum dots are considered as promising optical materials for light emitting optoelectronics. The light-emitting field-effect transistors that can be operated under relatively lower potential with an efficient energy conversion efficiency have yet to be realized with the perovskite quantum dot. Here, we present the CsPbBr3 quantum dot-based light-emitting field-effect transistor (LEFET). Surprisingly, unipolar transport characteristics with strong electroluminescence was observed at the interface of the CsPbBr3 QD-LEFET along with the exceptionally wide recombination zone of 80 μm, an order of magnitude larger than that of organic/polymer light-emitting field-effect transistors. Based on the systematic analysis for the electroluminescence of the CsPbBr3 NC-LEFET, we revealed that the increased diffusion length determined by the majority carrier mobility and the lifetime well explains the remarkably wide recombination zone. Furthermore, it was found that the energy-level matching and transport geometry of the hetero-structure also determine the charge distribution and recombination, substantially affecting the performance of the CsPbBr3 QD LEFET.