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Controlling In‐Ga‐Zn‐O Thin‐Film Resistance by Vacuum Rapid Thermal Annealing and Application to Transparent Electrode
摘要： This study reveals that an amorphous indium gallium zinc oxide film shows a large resistance change under vacuum rapid thermal annealing, whereas a zinc tin oxide film shows little resistance change under the same treatment. Based on these findings, the applicability of amorphous indium gallium zinc oxide thin films to a transparent source/drain electrode in zinc tin oxide thin-film transistors is investigated. The optical transmittance of the amorphous indium gallium zinc oxide and amorphous zinc tin oxide films in the visible region is greater than 85%. Furthermore, a zinc tin oxide thin-film transistor with an amorphous indium gallium zinc oxide source/drain electrode exhibits superior operation characteristics than devices with indium tin oxide source/drain electrodes, such as a lower threshold swing (from 369.96 to 315.45 mV dec?1), higher mobility (from 28.47 to 36.187 cm2 V?1 s?1), and higher on/off current ratio (from 1.25 × 107 to 3.56 × 107). In addition, in positive and negative bias temperature stress tests, the zinc tin oxide thin-film transistor with an amorphous indium gallium zinc oxide source/drain electrode shows almost equal stability compared to the zinc tin oxide thin-film transistor with an indium tin oxide source/drain electrode.
关键词： Zn-Sn-O (ZTO),In-Ga-Zn-O (IGZO) S/D electrode,thin-film transistors (TFT),vacuum rapid thermal annealing
更新于2025-09-23 15:19:57
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Enhanced Lifetime and Photostability with Low-temperature Mesoporous ZnTiO3/Compact SnO2 Electrodes in Perovskite Solar Cells
摘要： Perovskite solar cells (PSC) which have exceeded power conversion efficiencies (PCEs) of 25% are mainly demonstrated by using SnO2 or TiO2 as electron-transporting layers (ETLs). However, high-performance planar PSCs need precise process, which is difficult for large-scale production. Mesoporous structure shows better operability but with high-temperature process. Besides, as the most used mesoporous materials, the strong photocatalytic effect of TiO2 significantly limits the practical stability of PSCs under illumination (including ultraviolet light). Here we propose Zinc Titanate (ZnTiO3, ZTO) as mesoporous ETLs due to its weak photo-effect, excellent carrier extraction and transfer properties. Uniform mesoporous films were obtained by spinning coating the ZTO ink and annealed below 150°C. Photovoltaic devices based on Cs0.05FA0.81MA0.14PbI2.55Br0.45 perovskite sandwiched between SnO2-mesorporous ZTO electrode and Spiro-OMeTAD layer achieved the PCE of 20.5%. The PSCs retained more than 95% of their original efficiency after 100 days lifetime test without being encapsulated. Additionally, the PSCs retained over 95% of the initial performance when subjected at the maximum power point voltage for 120 h under AM 1.5G illumination (100 mW cm-2), demonstrating superior working stability. The application of ZTO provides a better choice for ETLs of PSCs. Moreover, the low temperature deposition method of inorganic ETL furnishes a way of low power consumption, large-scale and flexible preparation of PSCs.
关键词： perovskite solar cell,photostability,ZTO,low-temperature,mesoporous ETL
更新于2025-09-19 17:13:59
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Wide-gap (Ag,Cu)(In,Ga)Se <sub/>2</sub> solar cells with different buffer materials-A path to a better heterojunction
摘要： This contribution concerns the effect of the Ag content in wide-gap AgwCu1-wIn1-xGaxSe2 (ACIGS) absorber films and its impact on solar cell performance. First-principles calculations are conducted, predicting trends in absorber band gap energy (Eg) and band structure across the entire compositional range (w and x). It is revealed that a detrimental negative conduction band offset (CBO) with a CdS buffer can be avoided for all possible absorber band gap values (Eg = 1.0–1.8 eV) by adjusting the Ag alloying level. This opens a new path to reduce interface recombination in wide-gap chalcopyrite solar cells. Indeed, corresponding samples show a clear increase in open-circuit voltage (VOC) if a positive CBO is created by sufficient Ag addition. A further extension of the beneficial compositional range (positive CBO at buffer/ACIGS interface) is possible when exchanging CdS with Zn1-ySnyOz, because of its lower electron affinity (χ). Nevertheless, the experimental results strongly suggest that at present, residual interface recombination still limits the performance of solar cells with optimized CBO, which show an efficiency of up to 15.1% for an absorber band gap of Eg = 1.45 eV.
关键词： CIGS,ACIGS,high VOC,wide-gap chalcopyrite,Zn-Sn-O (ZTO)
更新于2025-09-16 10:30:52
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Enhanced Lifetime and Photostability with Low‐temperature Mesoporous ZnTiO3/Compact SnO2 Electrodes in Perovskite Solar Cells
摘要： Perovskite solar cells (PSC) which have exceeded power conversion efficiencies (PCEs) of 25% are mainly demonstrated by using SnO2 or TiO2 as electron-transporting layers (ETLs). However, high-performance planar PSCs need precise process, which is difficult for large-scale production. Mesoporous structure shows better operability but with high-temperature process. Besides, as the most used mesoporous materials, the strong photocatalytic effect of TiO2 significantly limits the practical stability of PSCs under illumination (including ultraviolet light). Here we propose Zinc Titanate (ZnTiO3, ZTO) as mesoporous ETLs due to its weak photo-effect, excellent carrier extraction and transfer properties. Uniform mesoporous films were obtained by spinning coating the ZTO ink and annealed below 150°C. Photovoltaic devices based on Cs0.05FA0.81MA0.14PbI2.55Br0.45 perovskite sandwiched between SnO2-mesorporous ZTO electrode and Spiro-OMeTAD layer achieved the PCE of 20.5%. The PSCs retained more than 95% of their original efficiency after 100 days lifetime test without being encapsulated. Additionally, the PSCs retained over 95% of the initial performance when subjected at the maximum power point voltage for 120 h under AM 1.5G illumination (100 mW cm-2), demonstrating superior working stability. The application of ZTO provides a better choice for ETLs of PSCs. Moreover, the low temperature deposition method of inorganic ETL furnishes a way of low power consumption, large-scale and flexible preparation of PSCs.
关键词： perovskite solar cell,mesoporous ETL,photostability,ZTO,low-temperature
更新于2025-09-11 14:15:04