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Fabricating ZnSnN2 with cosputtering
摘要： The deposition of ZnSnN2 by co-sputtering was studied systematically. Different deposition parameters, including substrate temperatures, N2 flow rates and different work pressure etc. were tried and the structural, optical and electrical properties were studied. The results show that the deposition parameters to fabricate ZnSnN2 are relatively wide. The suitable substrate temperature to obtain polycrystalline ZnSnN2 is around 350 °C when other parameters are kept constant. Relatively larger N2 flow rate can suppress the formation of metallic phase such as Sn and favour the deposition of ZnSnN2 with relatively pure phase, with other parameters to be constant. The addition of the substrate bias voltage or a relatively lower power of the Sn target is harmful to the film crystallization of ZnSnN2. The samples are considered to be wurtzite due to the absence of the orthorhombic (110) and (011) peaks at 20°–22°. The hexagonal lattice constants a and c are about 3.36–3.40 ? and 5.49 ?, respectively. The sputtering pressure can affect the structural and electrical properties of ZnSnN2. ZnSnN2 prepared at larger work pressure such as 7.0 Pa has a lower electron density (6.72 × 10^19 cm^-3) and a higher mobility (24.3 cm^2 V^-1 s^-1) as compared with those prepared at 1.0 and 3.0 Pa.
关键词： Sputtering,Wurtzite,Degenerate,ZnSnN2,Mobility
更新于2025-09-23 15:23:52
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Effects of built-in electric field on donor binding energy in InGaN/ZnSnN2 quantum well structures
摘要： InxGa1?xN/ZnSnN2 quantum well structures are studied in terms of a binding energy of a donor atom. 1s and 2p± impurity states are considered. The Schr?dinger’s and Poisson’s equations are solved self-consistently. A hydrogenic type wave function to represent each impurity state is assumed. The calculations include band-bending in the potential energy profile introduced by the built-in electric field existing along the structures. The binding energy and the energy of the transition between the impurity states are represented as a function of the quantum well width, the donor position, and the indium concentration. An external magnetic field up to 10 T is included into the calculations to compute the Zeeman splitting. The maximum value of the transition energy is around 30 meV (nearly 7.3 THz) which occurs in a 15-? In0.3Ga0.7N/ZnSnN2 quantum well. Being strong, the built-in electric field makes the transition energy drop quickly with the decreasing well width. For the same reason, the energy curves are found to be highly asymmetric function of the donor position around the well center. Compared to the bulk value, the transition energy in the quantum well structures enhances nearly two-fold.
关键词： Binding energy,ZnSnN2,Impurity,Quantum well,Donor,GaN
更新于2025-09-19 17:15:36
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Physical, photochemical, and extended piezoelectric studies of orthorhombic ZnSnN2 nanocolumn arrays
摘要： This study reports the piezo-related properties of ZnSnN2 (ZTN) fabricated through natural Sn3N4 and Zn thickness gradients deposited oppositely on a fluorine-doped tin oxide substrate to form Zn–Sn3N4 composition spreads to enhance the relative variation of the cation ratios and to promote the formation of orthorhombic ZTN. No moving shutter was incorporated into combinatorial magnetron sputtering to minimize fabrication complexity. The Sn3N4-rich deposition (Location 1) of the Zn–Sn3N4 composition spread exhibited Sn3N4 and the single crystallinity of orthorhombic (Pna21) ZTN nanocolumn arrays, which grew along the [0 0 1] direction, confirmed by locked-coupled X-ray diffraction and transmission electron microscopy. The constituent element diffusion and variation of the atomic binding state of constituent elements along the substrate normal were tracked by depth profiling using secondary ion mass spectroscopy and X-ray photoelectron spectroscopy. The band gap of ZTN (approximately 2.0 eV) was estimated from a UV–vis spectrum. The piezotronic and piezophototronic effects of ZTN were determined through a facile current–voltage measurement, which were explained by the Schottky barrier height variations. Piezophotocatalysis exhibited the highest rate constant (k, approximately 9 × 10?3/min) of the measurements, which was attributed to the reduced recombination of the photogenerated e?–h+ pairs because of the piezopotential distribution. Additionally, O2? radicals were predominantly indicated in the degradation process.
关键词： Piezotronic effect,Orthorhombic ZnSnN2 nanocolumn array,Piezophotocatalysis,Piezophototronic effect,Combinatorial Zn–Sn3N4 composition spread
更新于2025-09-10 09:29:36
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Tuning the photoluminescence, conduction mechanism and scattering mechanism of ZnSnN2
摘要： The high electron concentration and low mobility of ZnSnN2 hinder its potential applications in photocatalytic and optoelectronic devices. To reveal the mechanism, herein, ZnSnN2 thin films were prepared under different sputtering pressure. The results show that impurity band conduction, an electron density of above 1020cm-3 and a mobility of 2 cm2 V-1 s-1 dominated by variable-range hopping are observed in samples prepared at lower sputtering pressure, due to the unintentional incorporation of substitutional oxygen which is from residual vapour and which substitutes nitrogen, while conduction band conduction, an electron density of 1019 cm-3, a mobility of 24 cm2 V-1 s-1 limited by ionized impurity scattering and self-compensation ratio as well as an interband direct recombination emission are found in samples prepared at higher sputtering pressure, due to the decrease in substitutional oxygen doping.
关键词： ZnSnN2,impurity band conduction,photoluminescence,ionized impurity scattering,conduction band conduction
更新于2025-09-09 09:28:46