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Acceptor levels of the carbon vacancy in 4 <i>H</i> -SiC: Combining Laplace deep level transient spectroscopy with density functional modeling
摘要： We provide direct evidence that the broad Z1/2 peak, commonly observed by conventional deep level transient spectroscopy in as-grown and at high concentrations in radiation damaged 4H-SiC, has two components, namely, Z1 and Z2, with activation energies for electron emissions of 0.59 and 0.67 eV, respectively. We assign these components to Z?1/2 + e? → Z?1/2 → Z?1/2 + 2e? transition sequences from negative-U ordered acceptor levels of carbon vacancy (V_C) defects at hexagonal/pseudo-cubic sites, respectively. By employing short filling pulses at lower temperatures, we were able to characterize the first acceptor level of V_C on both sub-lattice sites. Activation energies for electron emission of 0.48 and 0.41 eV were determined for Z1(?/0) and Z2(?/0) transitions, respectively. Based on trap filling kinetics and capture barrier calculations, we investigated the two-step transitions from neutral to doubly negatively charged Z1 and Z2. Positions of the first and second acceptor levels of V_C at both lattice sites, as well as (?/0) occupancy levels, were derived from the analysis of the emission and capture data.
关键词： density functional theory,acceptor levels,deep level transient spectroscopy,negative-U ordering,carbon vacancy,4H-SiC
更新于2025-09-23 15:23:52
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Deep level acceptors of Zn-Mg divalent ions dopants in β-Ga2O3 for the difficulty to p-type conductivity
摘要： β-Ga2O3 exhibits huge potential applications in next-generation power electronics with its wide band gap, large breakdown field and high Baligas’s figure of merit. The achievement of p-type conductive β-Ga2O3 faces hugely challenge due to the self-compensating process, while that is critically important to further extend its utility and applications. Although the acceptor deep levels of divalent ions dopants can explain the difficulty of p-type Ga2O3 theoretically, while the experimental evidence is lacked. Herein, Zn and Zn-Mg co-doped β-Ga2O3 thin films were prepared to investigate the acceptor levels of ZnGa and MgGa. The XPS results indicate that both Zn and Mg exhibit divalent ions when they replaced trivalent Ga ion. The doping concentration and band gap can modulate by solely changing the numbers of Zn and Mg pieces during the deposition process. The levels of ZnGa and MgGa are located at 0.79 eV and 1.00 eV respectively speculated by photoluminescence, such deep acceptor transition levels proved that it is difficult to obtain highly conductive p-type Ga2O3 by doping with divalent ions of Zn and Mg.
关键词： acceptor levels,p-type conductivity,photoluminescence,Zn-Mg doping,β-Ga2O3
更新于2025-09-04 15:30:14