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oe1(光电查) - 科学论文

2 条数据
?? 中文(中国)
  • Transformation of scheelite M2MoTiO8 (M = Eu, Gd, Dy, Y) and zircon MVO4 (M = Ce, Sm, Gd, Dy) oxides to fluorite oxynitrides and perovskite oxides under mild ammonolysis conditions

    摘要: Anion-deficient fluorite oxynitrides, M2MoTiO5-xN2+x-δ (M = Eu, Gd, Dy, Y; x = 0.0-0.2; δ (anion vacancies) = 0.2-0.4) have been synthesized by the reaction of single phase scheelite, M2MoTiO8 precursors with nitrogen enriched ammonia gas at 800-850 °C. The oxynitrides were characterized by elemental analysis, thermogravimetric analysis (TGA), powder X-ray diffraction (PXRD), magnetic susceptibility and X-ray photoelectron spectroscopy (XPS) measurements. The results suggested that the products crystallizing in fluorite structure with an average oxidation state of Mo varying between 5.5-5.8 without any change in Ti4+ state. Similar attempts to react MVO4 (M = Ce, Sm, Gd, Dy), zircon oxides resulted only in V3+ containing perovskite (MVO3) oxides. The extent of nitrogen incorporation to form oxynitrides varies depending upon the stabilization of oxides in lower oxidation states.

    关键词: GdVO3 perovskite,Fluorites,Scheelite,Ammonolysis,Oxynitrides,Zircon

    更新于2025-09-23 15:23:52

  • Wafer-sized ultrathin gallium and indium nitride nanosheets through the ammonolysis of liquid metal derived oxides

    摘要: We report the synthesis of centimeter sized ultrathin GaN and InN. The synthesis relies on the ammonolysis of liquid metal derived two-dimensional (2D) oxide sheets that were squeeze-transferred onto desired substrates. Wurtzite GaN nanosheets featured typical thicknesses of 1.3 nm, an optical bandgap of 3.5 eV and a carrier mobility of 21.5 cm2V-1s-1, while the InN featured a thickness of 2.0 nm. The deposited nanosheets were highly crystalline, grew along the (001) direction and featured a thickness of only three unit cells. The method provides a scalable approach for the integration of 2D morphologies of industrially important semiconductors into emerging electronics and optical devices.

    关键词: ultrathin indium nitride,ultrathin gallium nitride,ammonolysis,two-dimensional materials,liquid metal derived oxides

    更新于2025-09-04 15:30:14