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Analysing consequence of solar irradiance on amorphous silicon solar cell in variable underwater environments
摘要： Harvesting underwater Solar energy using photovoltaic (PV) technology leads to an innovative approach to utilize it in monitoring various underwater sensors, devices, or other autonomous systems using modern-day power electronics. Another huge advantage of placing PV cells underwater comes from the fact that the water itself can provide cooling and cleaning for the cells. Such advantages come with many challenges and constraints due to the underwater spectral change and decrease in Solar radiation with an increase in water depth. In this work, an experimental set-up has been realized to create an underwater environment and further characterized in the indoor environment using the Solar simulator. Moreover, the transfer of Solar radiation through water and the performance of amorphous silicon Solar cell underwater up to 0.2 m has been analysed in changing underwater environments. This investigation shows a better understanding of solar radiation underwater and the amorphous silicon solar cell underwater at shallow depths with considering the water depth up to 0.2 m, salinity 3.5%, total dissolved salts, and other impurities affecting the solar radiation and the performance of amorphous silicon Solar cell in underwater conditions. In addition to that, the maximum power output Pmax of amorphous silicon Solar cell is 0.0367 W at 0.2 m in the case of DI water. In contrast, in real seawater and artificial seawater with 3.5% salinity, it shows 0.0337 W and 0.0327 W, respectively.
关键词： water salinity,amorphous silicon Solar cell,photovoltaic (PV) technology,underwater Solar energy,Solar radiation,PDMS (polydimethylsiloxane)
更新于2025-09-23 15:19:57
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Optical and Structural Phenomena at Multipulse Interference Femtosecond Laser Fabrication of Metasurfaces on a Thin Film of Amorphous Silicon
摘要： The formation of hexagonal microarrays of nanoholes (metasurfaces) in a 50-nm hydrogenated amorphous silicon film by means of three-beam interference of femtosecond laser pulses of the visible range (wavelength 515 nm) is studied experimentally with various exposures of the film. Characterization of arrays by scanning electron and optical microscopy, as well as optical transmission and reflection microspectroscopy, shows that an increase in the number of fixed energy laser pulses leads to a gradual evaporative formation of nanoholes in the film and, overall, the metasurface. Raman microspectroscopy reveals a simultaneous growth of the volume content of the crystal phase.
关键词： nanoholes,femtosecond laser,amorphous silicon,metasurfaces,interference
更新于2025-09-23 15:19:57
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Operational Performance and Degradation Influenced Life Cycle Environmentala??Economic Metrics of mc-Si, a-Si and HIT Photovoltaic Arrays in Hot Semi-arid Climates
摘要： Life cycle metrics evolution specific to the climate zone of photovoltaic (PV) operation would give detailed insights on the environmental and economic performance. At present, vast literature is available on the PV life cycle metrics where only the output energies ignoring the degradation rate (DR) influence. In this study, the environ-economic analysis of three PV technologies, namely, multi-crystalline silicon (mc-Si), amorphous silicon (a-Si) and hetero-junction with an intrinsic thin layer (HIT) have been carried out in identical environmental conditions. The energy performance parameters and the DR rate of three PV technologies are evaluated based on the monitored real time data from the installation site in hot semi-arid climates. The assessment demonstrates that the HIT PV module technology exhibits more suitable results compared to mc-Si and a-Si PV systems in hot semi-arid climatic conditions of India. Moreover, energy metrices which includes energy payback time (EPBT), energy production factor (EPF) and life cycle conversion efficiency (LCCE) of the HIT technologies are found to be 1.0, 24.93 and 0.15 years, respectively. HIT PV system has higher potential to mitigate the CO2 and carbon credit earned compared to mc-Si and a-Si PV system under hot semi-arid climate. However, the annualized uniform cost (UAC) for mc-Si (3.60 Rs/kWh) and a-Si (3.40 Rs/kWh) are more admissible in relation to the HIT (6.63 Rs/kWh) PV module type. We conclude that the approach of considering DR influenced life cycle metrics over the traditional approach can support to identify suitable locations for specific PV technology.
关键词： annualized uniform cost,amorphous silicon,crystalline solar cells,life cycle assessment,PV cells,energy payback time,life cycle metrics,HIT,photovoltaic systems,degradation rate
更新于2025-09-23 15:19:57
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Lighting flicker: a blind spot in indoor photovoltaic cell characterization
摘要： Pulse width modulation (PWM) driving is common in emerging solid-state or LED lighting. Unlike conventional lighting devices, the peak illumination intensity of a PWM-driven LED can be a hundredfold of average illumination intensity, causing strong lighting flicker. This work addresses the impact of the flicker on indoor amorphous Si (a-Si) photovoltaic cell performance. The power conversion efficiency of an amorphous silicon photovoltaic cell is found to be a function of not the average, but the peak illumination intensity. Indoor photovoltaic cells can thus seriously underperform under PWM-driven solid-state lighting when the peak illumination intensity is high enough to decrement photovoltaic cell performance.
关键词： Lighting flicker,power conversion efficiency,amorphous silicon,indoor photovoltaic cell,PWM-driven LED
更新于2025-09-23 15:19:57
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Impact of laser treatment on hydrogenated amorphous silicon properties
摘要： The application of laser radiation to locally modify the hydrogen distribution within hydrogenated amorphous silicon films on a short time scale is studied. The impact of laser power and irradiation time on the temperature of the silicon layer during the laser treatment and the hydrogen outdiffusion is analyzed. Moreover, the resulting optoelectronic properties of the amorphous silicon are examined. On a timescale of a few seconds or less, we can successfully decrease the hydrogen concentration in the surface-near region of the silicon layer without major impact on the optoelectronic properties.
关键词： laser treatment,amorphous silicon,hydrogen diffusion
更新于2025-09-23 15:19:57
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[Lecture Notes in Electrical Engineering] Sensors Volume 539 (Proceedings of the Fourth National Conference on Sensors, February 21-23, 2018, Catania, Italy) || Portable Optoelectronic System for Monitoring Enzymatic Chemiluminescent Reaction
摘要： This work presents a portable lab-on-chip system, based on thin film electronic devices and an all-glass microfluidic network, for the real-time monitoring of enzymatic chemiluminescent reactions. The microfluidic network is patterned, through wet etching, in a 1.1 mm-thick glass substrate that is subsequently bonded to a 0.5 mm-thick glass substrate. The electronic devices are amorphous silicon p-i-n photosensors, deposited on the outer side of the thinner glass substrate. The photosensors, the microfluidic network and the electronic boards reading out the photodiodes' current are enclosed in a small metallic box (10 × 8 × 15 cm3) in order to ensure shielding from electromagnetic interferences. Preliminary tests have been performed immobilizing horseradish peroxidase on the inner wall of the microchannel as model enzyme for detecting hydrogen peroxide. Limits of detection and quantification equal to 18 and 60 μM, respectively, have been found. These values are comparable to the best performances reported in literature for chemiluminescent-based optofluidic sensors.
关键词： Amorphous silicon,Photosensors,Enzymatic reactions,Anodic bonding,Horseradish peroxidase,Microfluidics
更新于2025-09-19 17:15:36
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35.3: Self-formed nano-scale metal-oxide contact interlayer for amorphous silicon tin oxide TFTs
摘要： The formation of metal oxide interlayer is induced by pre-annealing process in the amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes. Cross-sectional high-resolution transmission electron microscopy image confirmed the formation of ~8nm MoOx interlayer. The introduction of MoOx interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoOx interlayer. The self-formed MoOx interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film.
关键词： self-formed interlayer,amorphous Silicon-Tin-Oxide,work function,Thin film transistors,ohmic contact
更新于2025-09-19 17:15:36
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aSi:H/i-aSi:H/p+aSiGe:H Graded Band Gap Single Junction Solar Cell
摘要： In this paper, we present a single junction graded band gap thin film solar cell using heavily phosphorous doped amorphous silicon, intrinsic amorphous silicon and heavily boron doped amorphous silicon germanium. The first part of the work presents a rigorous analysis of J-V characteristics of recommended photovoltaic structure under short circuit (SC), open circuit (OC), dark and AM 1.5G illumination standard. Further, optimisation of thickness of active layers of the suggested n+aSi:H/i aSi:H/p+aSiGe:H solar cell structure is done using SCAPS1D solar simulator. The active layer thickness of the proposed solar cell is 430 nm only. Low active layer thickness and absence of multiple junctions reduces the material requirement, complexity and cost of the proposed solar cell. Furthermore, fabrication of individual layers and overall summary of their characterisation have been done. Finally, the proposed structure has been fabricated and validated its J-V characteristics. The fabricated solar cell has short circuit current density (Jsc) of 11.67 mA/cm2, open circuit voltage (Voc) of 1.18 V, fill factor (FF) of 0.857 and conversion efficiency (η) of 11.80 % which is on par with other announced single junction amorphous silicon solar cells. Here, we are reporting a single junction graded band gap solar cell using combination of aSi:H and aSiGe:H alloys with varying doping levels for the first time, which is better in conversion efficiency while compact and light.
关键词： SCAPS1D,graded bandgap,amorphous silicon germanium,J-V characteristics,PECVD,Amorphous Silicon Alloys
更新于2025-09-19 17:13:59
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Phase relation between supercooled liquid and amorphous silicon
摘要： The phase relation between supercooled liquid silicon (l-Si) and amorphous silicon (a-Si) is discussed based on experimental results. Electrostatically levitated l-Si samples were supercooled down to low temperatures, 300 K below the melting temperature (Tcl: 1683 K), and solidified accompanied by the release of latent heat. It was found that solidified Si samples melted again at 1480 K caused by the latent heat. Also, it was found that the Si samples that rapidly quenched near the solidification temperature contained a large amount of a-Si with tetrahedral coordination. These two findings show that the supercooled l-Si samples solidified into a-Si and a-Si melted, confirming the idea of a first-order phase transition between two metastable phases proposed by Turnbull et al. [Metall. Mater. Trans. A 29, 1825 (1998)].
关键词： supercooled liquid silicon,electrostatic levitation,amorphous silicon,latent heat,phase transition
更新于2025-09-19 17:13:59
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Analysis of Processa??Dependent Electrical Properties of Silicon Heterojunction Solar Cells by Quantum Efficiency and Temperaturea??Dependent Current Densitya??Voltage Measurements
摘要： Amorphous silicon–crystalline silicon (a-Si:H/c-Si) heterojunction solar cells are fabricated by infrared (IR) radiative or resistive preheating of silicon wafers before the a-Si:H layers deposition. The cells with IR radiative or resistive preheating lead to without S-shape (WoS) or with S-shape (WS) in their light current density–voltage (J–V) characteristics, respectively. The Suns-Voc analysis shows no front/back metal contact barriers for minority carriers in both cells. The light- and voltage-bias-dependent quantum efficiencies of the WS cell show the hindrance of carrier collection at the a-Si:H/c-Si interface due to the band offset, whereas more defective a-Si:H layers are observed in the WoS cell. The WS and WoS cells’ temperature-dependent dark J–V characteristics reveal that the carrier transport is through tunnel-assisted recombination and tunneling, respectively. The IR preheating of wafers results in the reduction of the bandgap of a-Si:H and facilitates for minimizing the band offset at the interface, whereas, the resistive heating shows the relatively better a-Si:H/c-Si interface passivation.
关键词： S-shapes,heterojunctions,quantum efficiencies,amorphous silicon,band offsets,silicon solar cells
更新于2025-09-19 17:13:59